JPWO2018004008A1 - 酸化物半導体膜及びその製造方法 - Google Patents
酸化物半導体膜及びその製造方法 Download PDFInfo
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- JPWO2018004008A1 JPWO2018004008A1 JP2018525322A JP2018525322A JPWO2018004008A1 JP WO2018004008 A1 JPWO2018004008 A1 JP WO2018004008A1 JP 2018525322 A JP2018525322 A JP 2018525322A JP 2018525322 A JP2018525322 A JP 2018525322A JP WO2018004008 A1 JPWO2018004008 A1 JP WO2018004008A1
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- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000003595 mist Substances 0.000 claims abstract description 35
- 239000012159 carrier gas Substances 0.000 claims abstract description 30
- 239000002019 doping agent Substances 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims abstract description 18
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- 230000000737 periodic effect Effects 0.000 claims abstract description 16
- 239000010948 rhodium Substances 0.000 claims abstract description 14
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 9
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 8
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 6
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- 230000015572 biosynthetic process Effects 0.000 description 5
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
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- 229910001867 inorganic solvent Inorganic materials 0.000 description 2
- 239000003049 inorganic solvent Substances 0.000 description 2
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- 229910052748 manganese Inorganic materials 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910020203 CeO Inorganic materials 0.000 description 1
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- 229910052779 Neodymium Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
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- 150000003842 bromide salts Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02579—P-type
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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Abstract
Description
[2] 前記第9族金属がロジウム、イリジウム又はコバルトである[1]記載の酸化物半導体膜。
[3] 前記第13族金属が、インジウム、アルミニウム及びガリウムから選ばれる1種又は2種以上の金属である[1]又は[2]に記載の酸化物半導体膜。
[4] 前記p型ドーパントが、マグネシウムである[1]〜[3]のいずれかに記載の酸化物半導体膜。
[5] 少なくとも半導体層と電極を備えた半導体装置であって、[1]〜[4]のいずれかに記載の酸化物半導体膜が前記半導体層に用いられていることを特徴とする半導体装置。
[6] p型半導体層を備えた熱電変換素子を含み、前記p型半導体層に[1]〜[4]のいずれかに記載の酸化物半導体が用いられている[5]記載の半導体装置。
[7] さらに、n型半導体層を備えており、前記n型半導体層は、周期律表の第13族金属を含む酸化物半導体を主成分とする[5]又は[6]に記載の半導体装置。
[8] [5]〜[7]のいずれかに記載の半導体装置を含むシステム。
[9] 周期律表の第9族金属及び/又は第13族金属とp型ドーパントとを含む原料溶液を霧化してミストを生成し、ついで、キャリアガスを用いて、基体の表面近傍まで前記ミストを搬送した後、前記ミストを前記基体表面近傍にて酸素雰囲気下で熱反応させることにより、前記基体上に酸化物半導体膜を形成することを特徴とする酸化物半導体膜の製造方法。
[10] 前記第9族金属がロジウム、イリジウム又はコバルトである[9]記載の製造方法。
[11] 前記第13族金属が、インジウム、アルミニウム及びガリウムから選ばれる1種又は2種以上の金属である[9]又は[10]に記載の製造方法。
[12] 前記p型ドーパントが、マグネシウムである[9]〜[11]のいずれかに記載の製造方法。
霧化工程は、前記原料溶液を霧化する。霧化手段は、原料溶液を霧化できさえすれば特に限定されず、公知の手段であってよいが、本発明においては、超音波を用いる霧化手段が好ましい。超音波を用いて得られたミストは、初速度がゼロであり、空中に浮遊するので好ましく、例えば、スプレーのように吹き付けるのではなく、空間に浮遊してガスとして搬送することが可能なミストであるので衝突エネルギーによる損傷がないため、非常に好適である。ミストの液滴のサイズは、特に限定されず、数mm程度であってもよいが、好ましくは50μm以下であり、より好ましくは100nm〜10μmである。
前記原料溶液は、周期律表の第9族金属及び/又は第13族金属とp型ドーパントとを含んでいれば特に限定されず、無機材料が含まれていても、有機材料が含まれていてもよいが、本発明においては、周期律表の第9族金属及び/又は第13族金属とp型ドーパントとを錯体又は塩の形態で有機溶媒または水に溶解又は分散させたものを原料溶液として好適に用いることができる。錯体の形態としては、例えば、アセチルアセトナート錯体、カルボニル錯体、アンミン錯体、ヒドリド錯体などが挙げられる。塩の形態としては、例えば、有機金属塩(例えば金属酢酸塩、金属シュウ酸塩、金属クエン酸塩等)、硫化金属塩、硝化金属塩、リン酸化金属塩、ハロゲン化金属塩(例えば塩化金属塩、臭化金属塩、ヨウ化金属塩等)などが挙げられる。
前記基体は、前記酸化物半導体膜を支持できるものであれば特に限定されない。前記基体の材料も、本発明の目的を阻害しない限り特に限定されず、公知の基体であってよく、有機化合物であってもよいし、無機化合物であってもよい。前記基体の形状としては、どのような形状のものであってもよく、あらゆる形状に対して有効であり、例えば、平板や円板等の板状、繊維状、棒状、円柱状、角柱状、筒状、螺旋状、球状、リング状などが挙げられるが、本発明においては、基板が好ましい。基板の厚さは、本発明においては特に限定されない。
搬送工程では、前記キャリアガスによって前記ミストを基体へ搬送する。キャリアガスの種類としては、本発明の目的を阻害しない限り特に限定されず、例えば、酸素、オゾン、窒素やアルゴン等の不活性ガス、または水素ガスやフォーミングガス等の還元ガスなどが挙げられるが、本発明においては、キャリアガスとして酸素を用いるのが好ましい。また、キャリアガスの種類は1種類であってよいが、2種類以上であってもよく、キャリアガス濃度を変化させた希釈ガス(例えば10倍希釈ガス等)などを、第2のキャリアガスとしてさらに用いてもよい。また、キャリアガスの供給箇所も1箇所だけでなく、2箇所以上あってもよい。キャリアガスの流量は、特に限定されないが、0.01〜20L/分であるのが好ましく、1〜10L/分であるのがより好ましい。希釈ガスの場合には、希釈ガスの流量が、0.001〜2L/分であるのが好ましく、0.1〜1L/分であるのがより好ましい。
製膜工程では、前記ミストを前記基体表面近傍で反応させて、前記基体表面の一部または全部に製膜する。前記熱反応は、前記ミストから膜が形成される熱反応であれば特に限定されず、熱でもって前記ミストが反応すればそれでよく、反応条件等も本発明の目的を阻害しない限り特に限定されない。本工程においては、前記熱反応を、通常、溶媒の蒸発温度以上の温度で行うが、あまり高すぎない温度以下が好ましい。本発明においては、前記熱反応を、750℃以下で行うのが好ましく、400℃〜750℃の温度で行うのがより好ましい。また、熱反応は、本発明の目的を阻害しない限り、真空下、非酸素雰囲気下、還元ガス雰囲気下および酸素雰囲気下のいずれの雰囲気下で行われてもよく、また、大気圧下、加圧下および減圧下のいずれの条件下で行われてもよいが、本発明においては、酸素雰囲気下で行われるのが好ましく、大気圧下で行われるのも好ましく、酸素雰囲気下でかつ大気圧下で行われるのがより好ましい。なお、膜厚は、製膜時間を調整することにより、設定することができ、本発明においては、膜厚を1μm以上とするのが好ましい。
本発明の半導体装置が発光ダイオード(LED)である場合の一例を図8に示す。図8の半導体発光素子は、第2の電極165b上にn型半導体層161を備えており、n型半導体層161上には、発光層163が積層されている。そして、発光層163上には、p型半導体層162が積層されている。p型半導体層162上には、発光層163が発生する光を透過する透光性電極167を備えており、透光性電極167上には、第1の電極165aが積層されている。なお、図8の半導体発光素子は、電極部分を除いて保護層で覆われていてもよい。
図1を用いて、本実施例で用いたミストCVD装置1を説明する。ミストCVD装置1は、キャリアガスを供給するキャリアガス源2aと、キャリアガス源2aから送り出されるキャリアガスの流量を調節するための流量調節弁3aと、キャリアガス(希釈)を供給するキャリアガス(希釈)源2bと、キャリアガス(希釈)源2bから送り出されるキャリアガス(希釈)の流量を調節するための流量調節弁3bと、前駆体溶液4aが収容されるミスト発生源4と、水5aが入れられる容器5と、容器5の底面に取り付けられた超音波振動子6と、成膜室7と、ミスト発生源4から成膜室7までをつなぐ供給管9と、成膜室7内に設置されたホットプレート8と、熱反応後のミスト、液滴および排気ガスを排出する排気口11とを備えている。なお、ホットプレート8上には、基板10が設置されている。
アルミニウムアセチルアセトナート1.6g、ロジウムアセチルアセトナート0.06g、マグネシウムアセチルアセトナート0.5g及び塩酸6mLを、水520mLと混合し、これを原料溶液とした。
上記2.で得られた原料溶液4aをミスト発生源4内に収容した。次に、基板10として、c面サファイア基板をホットプレート8上に設置し、ホットプレート8を作動させて成膜室7内の温度を550℃にまで昇温させた。次に、流量調節弁3a、3bを開いて、キャリアガス源であるキャリアガス供給手段2a、2bからキャリアガスを成膜室7内に供給し、成膜室7の雰囲気をキャリアガスで十分に置換した後、キャリアガスの流量を2L/分に、キャリアガス(希釈)の流量を0.5L/分にそれぞれ調節した。なお、キャリアガスとして酸素を用いた。
次に、超音波振動子6を2.4MHzで振動させ、その振動を、水5aを通じて原料溶液4aに伝播させることによって、原料溶液4aを霧化させてミスト4bを生成させた。このミスト4bが、キャリアガスによって、供給管9内を通って、成膜室7内に導入され、大気圧下、550℃にて、成膜室7内でミストが熱反応して基板10上に膜が形成された。なお、製膜時間は12時間であった。
2a キャリアガス源
2b キャリアガス(希釈)源
3a 流量調節弁
3b 流量調節弁
4 ミスト発生源
4a 原料溶液
4b ミスト
5 容器
5a 水
6 超音波振動子
7 成膜室
8 ホットプレート
9 供給管
10 基板
11 排気口
101a n−型半導体層
101b n+型半導体層
102 p型半導体層
103 金属層
104 絶縁体層
105a ショットキー電極
105b オーミック電極
121a バンドギャップの広いn型半導体層
121b バンドギャップの狭いn型半導体層
121c n+型半導体層
123 p型半導体層
125a ゲート電極
125b ソース電極
125c ドレイン電極
128 緩衝層
129 基板
131a n−型半導体層
131b 第1のn+型半導体層
131c 第2のn+型半導体層
132 p型半導体層
134 ゲート絶縁膜
135a ゲート電極
135b ソース電極
135c ドレイン電極
138 緩衝層
139 半絶縁体層
141a n−型半導体層
141b 第1のn+型半導体層
141c 第2のn+型半導体層
142 p型半導体層
145a ゲート電極
145b ソース電極
145c ドレイン電極
151 n型半導体層
151a n−型半導体層
151b n+型半導体層
152 p型半導体層
154 ゲート絶縁膜
155a ゲート電極
155b エミッタ電極
155c コレクタ電極
161 n型半導体層
162 p型半導体層
163 発光層
165a 第1の電極
165b 第2の電極
167 透光性電極
169 基板
Claims (12)
- 金属酸化物を主成分とする酸化物半導体膜であって、前記金属酸化物が周期律表の第9族金属及び/又は第13族金属を含み、膜中にp型ドーパントを含有し、p型キャリア密度が1×1015/cm3以上であり、移動度が1cm2/Vs以上であることを特徴とする酸化物半導体膜。
- 前記第9族金属がロジウム、イリジウム又はコバルトである請求項1記載の酸化物半導体膜。
- 前記第13族金属が、インジウム、アルミニウム及びガリウムから選ばれる1種又は2種以上の金属である請求項1又は2に記載の酸化物半導体膜。
- 前記p型ドーパントが、マグネシウムである請求項1〜3のいずれかに記載の酸化物半導体膜。
- 少なくとも半導体層と電極を備えた半導体装置であって、請求項1〜4のいずれかに記載の酸化物半導体膜が前記半導体層に用いられていることを特徴とする半導体装置。
- p型半導体層を備えた熱電変換素子を含み、前記p型半導体層に請求項1〜4のいずれかに記載の酸化物半導体が用いられている請求項5記載の半導体装置。
- さらに、n型半導体層を備えており、前記n型半導体層は、周期律表の第13族金属を含む酸化物半導体を主成分とする請求項5又は6に記載の半導体装置。
- 請求項5〜7のいずれかに記載の半導体装置を含むシステム。
- 周期律表の第9族金属及び/又は第13族金属とp型ドーパントとを含む原料溶液を霧化してミストを生成し、ついで、キャリアガスを用いて、基体の表面近傍まで前記ミストを搬送した後、前記ミストを前記基体表面近傍にて酸素雰囲気下で熱反応させることにより、前記基体上に酸化物半導体膜を形成することを特徴とする酸化物半導体膜の製造方法。
- 前記第9族金属がロジウム、イリジウム又はコバルトである請求項9記載の製造方法。
- 前記第13族金属が、インジウム、アルミニウム及びガリウムから選ばれる1種又は2種以上の金属である請求項9又は10に記載の製造方法。
- 前記p型ドーパントが、マグネシウムである請求項9〜11のいずれかに記載の製造方法。
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