JPWO2017188254A1 - パワーモジュール用基板、パワーモジュールおよびパワーモジュール用基板の製造方法 - Google Patents
パワーモジュール用基板、パワーモジュールおよびパワーモジュール用基板の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 164
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 175
- 239000002184 metal Substances 0.000 claims abstract description 175
- 238000009713 electroplating Methods 0.000 claims abstract description 117
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052709 silver Inorganic materials 0.000 claims abstract description 97
- 239000004332 silver Substances 0.000 claims abstract description 97
- 239000002245 particle Substances 0.000 claims abstract description 49
- 239000002923 metal particle Substances 0.000 claims abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 122
- 229910052759 nickel Inorganic materials 0.000 claims description 61
- 238000007747 plating Methods 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 40
- 229920005989 resin Polymers 0.000 claims description 40
- 238000005219 brazing Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 9
- 238000005304 joining Methods 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 9
- 230000017525 heat dissipation Effects 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 54
- 239000000463 material Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 32
- 229910052763 palladium Inorganic materials 0.000 description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000000243 solution Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- -1 copper Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 229940098221 silver cyanide Drugs 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
まず、個片(1個取り)のパワーモジュール用基板およびそれを含むパワーモジュールについて説明する。
次に、図8〜図10等を参照して、本開示の実施形態におけるパワーモジュール用基板10の製造方法を説明する。なお、多数個取りパワーモジュール用基板110を分割してパワーモジュール用基板10を作製する例の説明を行なうが、パワーモジュール用基板10は1個取りで作製しても構わない。
1a・・・凹部
2・・・・金属板
2a・・・くぼみ
3・・・・第1電気めっき層
3a・・・銀層
3b・・・ニッケル層
3bb・・・(凹凸部分の)ニッケル
3c・・・パラジウム層
4・・・・端子板
5・・・・放熱板
6・・・・第2電気めっき層(ニッケル層)
10・・・・パワーモジュール用基板
11・・・・電子部品
12・・・・樹脂層
13・・・・ボンディングワイヤ
20・・・・パワーモジュール
30・・・・放熱用部材
101・・・・絶縁母基板
102・・・・金属母板
110・・・・多数個取りパワーモジュール用基板
115・・・・ろう材ペースト層
116・・・・めっきレジスト
117・・・・エッチングレジスト
Claims (13)
- 上面および下面を有する絶縁基板と、
上面および下面を有し、該下面が前記絶縁基板の前記上面に対向して接合された金属板と、
前記金属板の上面の中央部を部分的に被覆している第1電気めっき層とを備えており、
該第1電気めっき層が少なくとも銀層を有しており、該銀層における銀の粒径が前記金属板の上面部分における金属の粒径以上の大きさであるパワーモジュール用基板。 - 前記第1電気めっき層が、前記銀層と前記金属板の上面との間に配置されたニッケル層をさらに含んでいる請求項1に記載のパワーモジュール用基板。
- 平面視において、前記第1電気めっき層の外周が凹凸を有する形状である請求項1または請求項2に記載のパワーモジュール用基板。
- 平面視において、前記第1電気めっき層の外周が、平面視において凹凸を有する形状であり、前記第1電気めっき層の外周の凹凸部分の少なくとも一部にニッケルが存在している請求項2に記載のパワーモジュール用基板。
- 前記金属板が、前記上面のうち前記第1電気めっき層の外周に沿った部分においてくぼみを有する請求項1〜請求項4のいずれかに記載のパワーモジュール用基板。
- 前記くぼみの内側面が、該くぼみの開口から底部に向かって内側に傾斜または湾曲している請求項5に記載のパワーモジュール用基板。
- 前記くぼみの内側面の表面粗さが、前記金属板の上面の表面粗さよりも大きい請求項5に記載のパワーモジュール用基板。
- 上面および下面を有しており、前記上面が前記絶縁基板の下面に対向して接合された放熱板と
該放熱板の下面を覆う第2電気めっき層とをさらに備えており、
該第2電気めっき層の外周の少なくとも一部が前記放熱板の下面の外周から離れている請求項1〜請求項7のいずれかに記載のパワーモジュール用基板。 - 前記第2電気めっき層がニッケル層を主成分とする請求項8に記載のパワーモジュール用基板。
- 請求項1〜請求項9のいずれかに記載のパワーモジュール用基板と、
該パワーモジュール用基板の前記第1電気めっき層上に搭載された電子部品と、
前記金属板の上面のうち前記第1電気めっき層で被覆されていない部分から前記電子部品にかけて覆う樹脂層とを備えるパワーモジュール。 - 請求項8または請求項9に記載のパワーモジュール用基板と、
該パワーモジュール用基板の前記第1電気めっき層上に搭載された電子部品と、
前記放熱板の下面の外周から前記電子部品にかけて覆う樹脂層とを備えるパワーモジュール。 - 上面を有する絶縁母基板と下面を有する金属母板とを準備し、前記絶縁母基板の上面と前記金属母板の下面とをろう材ペースト層で接合する第1工程と、
前記金属母板の露出表面に部分的にめっきレジストを形成する第2工程と、
前記金属母板の露出表面のうち前記めっきレジストが形成されていない部分に電気めっき層を形成する第3工程と、
前記金属母板のうち前記電気めっきが形成されていない部分の少なくとも一部を除去する第4工程と、
を有することを特徴とするパワーモジュール用基板の製造方法。 - 前記第1工程において、前記ろう材ペースト層を互いに独立した複数のろう材ペースト層として設け、
前記第2工程において、前記めっきレジストを前記金属母板の露出表面に、前記複数のろう材ペースト層でそれぞれに接合された複数の接合領域同士の間に位置するように形成し、
前記第4工程において、前記金属母板のうち前記接合領域同士の間の部分をエッチングして除去し、前記金属母板を互いに離れた複数の金属板に分割することを特徴とする請求項12に記載のパワーモジュール用基板の製造方法。
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