JPWO2017154128A1 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JPWO2017154128A1 JPWO2017154128A1 JP2018503910A JP2018503910A JPWO2017154128A1 JP WO2017154128 A1 JPWO2017154128 A1 JP WO2017154128A1 JP 2018503910 A JP2018503910 A JP 2018503910A JP 2018503910 A JP2018503910 A JP 2018503910A JP WO2017154128 A1 JPWO2017154128 A1 JP WO2017154128A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06812—Stabilisation of laser output parameters by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/347—Dynamic headroom control [DHC]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/395—Linear regulators
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
- H05B45/44—Details of LED load circuits with an active control inside an LED matrix
- H05B45/46—Details of LED load circuits with an active control inside an LED matrix having LEDs disposed in parallel lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
Abstract
Description
Claims (3)
- 直列に接続された複数の発光素子が複数列設けられ、複数列の複数の発光素子の一端が電源に共通に接続されて構成される発光素子群と、
前記複数列に対応して設けられ、各列の前記複数の発光素子の他端に接続され、前記複数の発光素子に流れる電流を制御する複数の電流制御素子と、
各列毎に、前記複数の発光素子の合計順電圧をモニタする順電圧モニタ回路と、
前記順電圧モニタ回路により検出された各列毎の前記複数の発光素子の合計順電圧に基づき前記複数列の前記複数の発光素子の合計順電圧のばらつきが閾値以下になるように前記電流制御素子を制御する制御回路と、
を備える半導体発光装置。 - 前記発光素子群の光出力をモニタする光出力モニタ回路を備え、
前記制御回路は、前記光出力モニタ回路からの前記発光素子群の光出力が所定の出力になるように前記電流を制御するとともに、前記複数列の前記複数の発光素子に流れる合計電流が最小になるように前記電流制御素子を制御する請求項1記載の半導体発光装置。 - 前記制御回路は、各列毎の前記複数の発光素子の合計順電圧に基づき前記複数の電流制御素子の発熱が所定値以下になるように前記複数列の複数の発光素子の一端に印加される前記電源の電圧を低下させる請求項1又は請求項2記載の半導体発光装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/057309 WO2017154128A1 (ja) | 2016-03-09 | 2016-03-09 | 半導体発光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2017154128A1 true JPWO2017154128A1 (ja) | 2018-12-27 |
Family
ID=59789142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018503910A Pending JPWO2017154128A1 (ja) | 2016-03-09 | 2016-03-09 | 半導体発光装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10511144B2 (ja) |
JP (1) | JPWO2017154128A1 (ja) |
CN (1) | CN108780981B (ja) |
WO (1) | WO2017154128A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6928840B2 (ja) * | 2018-01-17 | 2021-09-01 | 古河電気工業株式会社 | 発光装置、ファイバレーザ装置、および発光素子の制御方法 |
JP7021618B2 (ja) * | 2018-08-10 | 2022-02-17 | オムロン株式会社 | レーザダイオードアレイデバイスの製造方法、レーザ発光回路及び測距装置 |
JP2020038855A (ja) * | 2018-08-31 | 2020-03-12 | ソニーセミコンダクタソリューションズ株式会社 | 光源装置、調整方法、センシングモジュール |
JP2020088020A (ja) * | 2018-11-16 | 2020-06-04 | ソニーセミコンダクタソリューションズ株式会社 | 検出回路、駆動回路および発光装置 |
US20220006258A1 (en) * | 2018-11-27 | 2022-01-06 | Sony Semiconductor Solutions Corporation | Drive device and light emitting device |
US11728621B2 (en) * | 2019-06-05 | 2023-08-15 | Stmicroelectronics (Research & Development) Limited | Voltage controlled steered VCSEL driver |
US11579290B2 (en) | 2019-06-05 | 2023-02-14 | Stmicroelectronics (Research & Development) Limited | LIDAR system utilizing multiple networked LIDAR integrated circuits |
Family Cites Families (16)
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JP3280111B2 (ja) | 1993-03-18 | 2002-04-30 | ホーヤ株式会社 | レーザダイオード駆動制御回路 |
JP3456120B2 (ja) * | 1997-09-09 | 2003-10-14 | 三菱電機株式会社 | レーザダイオード用電源制御装置 |
JP3456121B2 (ja) * | 1997-09-09 | 2003-10-14 | 三菱電機株式会社 | レーザダイオード用電源制御装置 |
US6724523B2 (en) * | 2001-11-15 | 2004-04-20 | Hrl Laboratories, Llc | Remotely locatable RF power amplification system |
JP2005129877A (ja) | 2003-10-22 | 2005-05-19 | Sc Technology Kk | 発光ダイオードの配列、結線方法 |
JP2005259724A (ja) * | 2004-02-10 | 2005-09-22 | Fuji Photo Film Co Ltd | 発光素子の順方向電圧降下測定方法及び装置、並びに光源装置及びこれを用いた感熱プリンタ |
JP4973005B2 (ja) * | 2006-05-24 | 2012-07-11 | 日立電線株式会社 | レーザ制御装置及びその制御方法 |
JP4888082B2 (ja) * | 2006-11-24 | 2012-02-29 | パナソニック電工株式会社 | Led点灯回路およびそれを用いる照明器具 |
US20100109537A1 (en) * | 2006-10-25 | 2010-05-06 | Panasonic Electric Works Co., Ltd. | Led lighting circuit and illuminating apparatus using the same |
JP2009123838A (ja) | 2007-11-13 | 2009-06-04 | Denso Corp | 点火コイル及びその製造方法 |
JP5897865B2 (ja) * | 2011-10-18 | 2016-04-06 | シャープ株式会社 | 発光素子駆動装置 |
CN202759632U (zh) * | 2012-06-20 | 2013-02-27 | 伟思科技控股有限公司 | 一种发光二极管的驱动电路及照明装置 |
US9970994B2 (en) * | 2012-12-27 | 2018-05-15 | Sharp Kabushiki Kaisha | Electronic device |
US9054485B1 (en) * | 2014-09-17 | 2015-06-09 | Hong Kong Applied Science & Technology Research Institute Company, Ltd. | Asymmetric edge compensation of both anode and cathode terminals of a vertical-cavity surface-emitting laser (VCSEL) diode |
TWI587736B (zh) * | 2016-01-05 | 2017-06-11 | 立錡科技股份有限公司 | 發光元件驅動電路及發光元件電路之驅動方法 |
JP6899695B2 (ja) * | 2017-04-26 | 2021-07-07 | ローム株式会社 | 発光素子駆動装置及びその駆動方法 |
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2016
- 2016-03-09 WO PCT/JP2016/057309 patent/WO2017154128A1/ja active Application Filing
- 2016-03-09 US US16/082,938 patent/US10511144B2/en active Active
- 2016-03-09 CN CN201680083339.XA patent/CN108780981B/zh active Active
- 2016-03-09 JP JP2018503910A patent/JPWO2017154128A1/ja active Pending
Also Published As
Publication number | Publication date |
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US20190097395A1 (en) | 2019-03-28 |
US10511144B2 (en) | 2019-12-17 |
CN108780981A (zh) | 2018-11-09 |
CN108780981B (zh) | 2020-06-23 |
WO2017154128A1 (ja) | 2017-09-14 |
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