JPWO2017099145A1 - マイクロ波モジュール及び高周波モジュール - Google Patents
マイクロ波モジュール及び高周波モジュール Download PDFInfo
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- JPWO2017099145A1 JPWO2017099145A1 JP2017555113A JP2017555113A JPWO2017099145A1 JP WO2017099145 A1 JPWO2017099145 A1 JP WO2017099145A1 JP 2017555113 A JP2017555113 A JP 2017555113A JP 2017555113 A JP2017555113 A JP 2017555113A JP WO2017099145 A1 JPWO2017099145 A1 JP WO2017099145A1
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Abstract
Description
図1は、実施の形態1に係るマイクロ波モジュールの正面図である。図2は、図1に示すマイクロ波モジュールのII−II矢視断面図である。図3は、図2に示すRFデバイスの詳細図である。図4は、図2に示すデバイス基板を第4の端面側から見た図である。図5は、図1に示す多層樹脂基板を第1の端面側から見た図である。図6は、図1に示す多層樹脂基板の内層部を示す図である。図7は、図3に示すデバイス基板と図5,6に示す多層樹脂基板の断面図である。図8は、図7に示す多層樹脂基板において第1の端面側の面グランドと内層面グランドと2つのグランドスルーホールとを含む面の断面図である。
図9は実施の形態2に係るマイクロ波モジュールの断面図である。図10は図9に示す多層樹脂基板の第2の端面側から見た図である。図11は図9に示すコンタクト端子の斜視図である。図12は図9に示す分配回路基板の第5の端面側から見た図である。
(1)多層樹脂基板100に相当する多層樹脂基板100−1が用いられていること。
(2)RFデバイス123に相当する、後述する、電磁シールドされていない非シールドマイクロ波デバイスであるRFデバイス123−1が用いられていること。
(3)RFデバイス123−1は多層樹脂基板100−1の第2の端面102に設けられていること。
(4)多層樹脂基板100−1の第2の端面102には、RFデバイス123−1を囲んで、RFデバイス123−1用の複数のランド183が設けられていること。
(5)電源制御コネクタ112の代わりに、電源制御コネクタ用パッド52A及び電源制御コネクタ用端子52Bが設けられていること。ただし、電源制御コネクタ112があっても良い。
(6)多層樹脂基板100−1の第2の端面102において、後述のコンタクト端子55と対向する位置に、RFコネクタ用パッド51A及び電源制御コネクタ用パッド52Aが設けられていること。
また、実施の形態2のマイクロ波モジュール500−1は、主に、以下の点が実施の形態1のマイクロ波モジュール500と異なる。
(7)マイクロ波モジュール500−1は、1つもしくは複数のマイクロ波モジュール1−1と、冷却板300に相当する冷却板300−1から構成されること。
(8)冷却板300−1には、RFデバイス123−1及びランド183を格納するキャビティ15が形成されていること。なお図9から図12ではキャビティ15の図示を省略しているが、キャビティ15は後述する図14において例示するものとする。
(9)冷却板300−1には、多層樹脂基板100−1上の各デバイスに電源、制御信号、及びRF信号を供給する回路基板である分配回路基板50が設けられていること。
(10)分配回路基板50上に表面実装されバネ性を有するコンタクト端子55が設けられていること。
Claims (4)
- マイクロ波回路と、少なくとも前記マイクロ波回路を覆う電磁シールド壁とを有する複数のマイクロ波デバイスが実装される第1の端面と、前記第1の端面の反対側の第2の端面と、それぞれが前記マイクロ波回路に接続される複数の信号スルーホールと、それぞれが前記複数の信号スルーホールを囲んで設けられ前記電磁シールド壁に接続される複数のグランドスルーホールと、前記第1の端面側に設けられ前記電磁シールド壁に接続される第1の面グランドと、前記複数のグランドスルーホールに接続される内層面グランドと、前記複数のグランドスルーホールの内の第1のグランドスルーホール群と前記第1の面グランドと前記内層面グランドとに囲まれると共に、前記複数の信号スルーホールの内の第1の信号スルーホールに一端が接続される内層信号線路と、前記内層信号線路の他端に一端が接続される、前記複数の信号スルーホールの内の第2の信号スルーホールと、前記第2の信号スルーホールを囲んで設けられ前記内層面グランドに接続される、前記複数のグランドスルーホールの内の第2のグランドスルーホール群と、前記第2の信号スルーホールの他端に接続され、前記第2の端面側の表面に形成される第1のパッドと、前記第1のパッドを取り囲むように配置され、前記第2のグランドスルーホール群に接続されるグランドパッドと、前記第2の端面側に設けられ、前記グランドパッドに接続される第2の面グランドと、前記マイクロ波回路に熱的に接続される放熱体を有する多層樹脂基板を備え、
複数の前記多層樹脂基板のそれぞれは、
前記第2の面グランドに接続される冷却板に実装され、
前記多層樹脂基板と対向する面に第2のパッドが形成され、前記冷却板と前記第2の端面との間の空間に設けられる分配回路基板との間で前記第1のパッドと前記第2のパッドとの間に設けられ、前記第1のパッドと前記第2のパッドにそれぞれ接続されるバネ性のコンタクト端子により信号接続されることを特徴とするマイクロ波モジュール。 - 前記多層樹脂基板は、前記第2の端面側に設けられる第2のマイクロ波デバイスを有し、
前記第2のマイクロ波デバイスは、前記冷却板のキャビティに収容されて電磁遮蔽されることを特徴とする請求項1に記載のマイクロ波モジュール。 - 前記多層樹脂基板に表面実装され、アンテナパネルに固定された同軸コネクタと接続される同軸コネクタを備え、
前記同軸コネクタと前記コンタクト端子とが前記複数のマイクロ波回路を介して電気的に接続されることを特徴とする請求項1または請求項2に記載のマイクロ波モジュール。 - 高周波デバイスが実装される回路実装面を有し、信号スルーホールとグランドスルーホールと前記高周波デバイスが有する第1の放熱体に熱的な接続がなされる第2の放熱体を有した多層樹脂基板と、
前記多層樹脂基板の裏面に設けられた信号端子およびグランド端子と、
前記多層樹脂基板の裏面および前記第2の放熱体に熱的に接続される冷却板と、
前記多層樹脂基板の前記信号端子および前記グランド端子に一端が接続されるバネ性のコンタクト端子と、
前記冷却板に配置され、前記コンタクト端子の収容空間で前記コンタクト端子の他端に接続されるパッドを有し、前記コンタクト端子を介して前記高周波デバイスとの間で高周波信号を送受する回路基板と、
を備えた高周波モジュール。
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