JPWO2017068624A1 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JPWO2017068624A1 JPWO2017068624A1 JP2017546290A JP2017546290A JPWO2017068624A1 JP WO2017068624 A1 JPWO2017068624 A1 JP WO2017068624A1 JP 2017546290 A JP2017546290 A JP 2017546290A JP 2017546290 A JP2017546290 A JP 2017546290A JP WO2017068624 A1 JPWO2017068624 A1 JP WO2017068624A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/14—Arrangements for controlling delivery; Arrangements for controlling the spray area for supplying a selected one of a plurality of liquids or other fluent materials or several in selected proportions to a spray apparatus, e.g. to a single spray outlet
- B05B12/1472—Arrangements for controlling delivery; Arrangements for controlling the spray area for supplying a selected one of a plurality of liquids or other fluent materials or several in selected proportions to a spray apparatus, e.g. to a single spray outlet separate supply lines supplying different materials to separate outlets of the spraying apparatus
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- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
- B05B12/18—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area using fluids, e.g. gas streams
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- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/0278—Arrangement or mounting of spray heads
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
- B05B14/30—Arrangements for collecting, re-using or eliminating excess spraying material comprising enclosures close to, or in contact with, the object to be sprayed and surrounding or confining the discharged spray or jet but not the object to be sprayed
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/025—Nozzles having elongated outlets, e.g. slots, for the material to be sprayed
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/08—Spray pistols; Apparatus for discharge with separate outlet orifices, e.g. to form parallel jets, i.e. the axis of the jets being parallel, to form intersecting jets, i.e. the axis of the jets converging but not necessarily intersecting at a point
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/24—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Abstract
Description
(全体構成)
図1は、この発明の実施の形態1である成膜装置の主要構成部であるミスト噴射ヘッド部100及びその周辺を示す断面図である。図2は図1のA−A断面構造を示す断面図である。なお、図1及び図2並びに以降で示す図3〜図8において、それぞれXYZ直交座標軸を併記している。また、図2においては底板21の図示を省略している。
まず、原料溶液噴射用ノズル部N1の構成について説明する。
次に、反応材料噴射用ノズル部N2及びN3(第1及び第2の反応材料噴射用ノズル部)構成について説明する。なお、反応材料噴射用ノズル部N2及びN3は噴射する第1及び第2の反応材料が互いに独立している点及び形成位置を除き、同一構成であるため、以下では反応材料噴射用ノズル部N2を中心に、適宜、反応材料噴射用ノズル部N3の説明を付記して説明する。
次に、排気用ノズル部N4の構成について説明する。
実施の形態1のミスト噴射ヘッド部100の端部(図1の左(−X方向)側端部)において、不活性ガス噴射部81は枠部30または枠部30に隣接する領域に配設されている。
実施の形態1の成膜装置は、ミスト噴射ヘッド部100の底面に取り外し可能に設けられる底板21を備えたことを特徴としている。この際、底板21は成膜装置による成膜処理の実行を妨げない態様でミスト噴射ヘッド部100の底面に取り付けられる。
実施の形態1の成膜装置はミスト噴射ヘッド部100の底面に取り外し可能な底板21を設けることにより、底板21を洗浄することにより底板21に付着した反応生成物を簡単に除去することができる。
図5は実施の形態2である成膜装置におけるミスト噴射ヘッド部100Bの構成を示す断面図である。図6は図5のC−C断面構造を示す断面図である。また、図6においては底板21Bの図示を省略している。
以下、原料溶液噴射用ノズル部N1B及び反応材料噴射用ノズル部N3Bの構成について説明する。
実施の形態2のミスト噴射ヘッド部100Bの端部(図5の−X方向側端部)において、実施の形態1と同様、不活性ガス噴射部81は枠部30または枠部30に隣接する領域に配設されている。さらに、ミスト噴射ヘッド部100Bの反応材料噴射用ノズル部N3Bの内部に不活性ガス噴射部82B及び83Bが形成されている。
実施の形態2の成膜装置は、ミスト噴射ヘッド部100Bの底面に取り外し可能に設けられる底板21Bを備えたことを特徴としている。この際、底板21Bは成膜装置による成膜処理の実行を妨げない態様でミスト噴射ヘッド部100Bの底面に取り付けられる。
実施の形態2の成膜装置はミスト噴射ヘッド部100Bの底面に取り外し可能な底板21Bを設けることにより、底板21Bを洗浄することにより底板21Bに付着した反応生成物を簡単に除去することができる。
なお、上述した実施の形態では、底板21(底板21B)は、排気口18、不活性ガス噴出口191及び195(以下、「排気口18等」略記)を覆うことなく形成したが、排気口18等がミスト噴射ヘッド部100(100B)の最外より内側に形成されている場合は、排気口18等を覆い、排気口18等と対応する領域に開口部を設けるようにしても良い。
2,2B,3,3B 反応材料供給部
4 排気物出口部
6〜9 整流部
11〜14,12B及び13B 空洞部
15,15B 原料溶液噴出口
16,16B,17,17B 反応材料噴出口
18 排気口
20,20B ベースプレート部
21,21B 底板
22 温度調節機構
23 基板
24 載置部
30 枠部
35,35B 原料溶液用開口部
36,36B,37,37B 反応材料用開口部
41,41B 原料溶液排出部
42,42B,43 反応材料排出部
44 排気物導入部
51〜55,52B,53B 不活性ガス供給部
58 吹き抜け部
61〜64,71〜75,61B,62B,72B,73B 通路
81〜83,82B,83B 不活性ガス噴射部
100,100B ミスト噴射ヘッド部
191〜195,192B,193B 不活性ガス噴出口
392〜394,392B,393B 不活性ガス用開口部
N1,N1B 原料溶液噴射用ノズル部
N2,N3,N3B 反応材料噴射用ノズル部
N4 排気用ノズル部
Claims (15)
- ミスト化された原料溶液を大気中に噴射することにより、基板(23)に対して膜を成膜する成膜処理を実行する成膜装置であって、
前記基板が載置される載置部(24)と、
前記載置部に載置されている前記基板の上面に対向して設けられ、底面に原料溶液噴出口(15,15B)及び排気口(18)を有し、前記原料溶液噴出口より前記原料溶液を噴射し、前記排気口から排気処理を行うミスト噴射ヘッド部(100,100B)と、
前記ミスト噴射ヘッド部の底面に取り外し可能に設けられる底板(21,21B)とを備え、前記底板は前記成膜処理の実行を妨げない態様で前記ミスト噴射ヘッド部の底面に取り付けられることを特徴とする、
成膜装置。 - 請求項1記載の成膜装置であって、
前記ミスト噴射ヘッド部は、底面に反応材料噴出口(16,17,16B,17B)及び不活性ガス噴出口(192〜194,192B,193B)をさらに有し、前記反応材料噴出口より前記原料溶液との反応に寄与する反応材料を噴射し、前記不活性ガス噴出口より不活性ガスを噴射し、
前記底板は、前記ミスト噴射ヘッド部の底面への取り付け時に、前記原料溶液噴出口、前記反応材料噴出口及び前記不活性ガス噴出口に対応する領域に形成される原料溶液用開口部(35,35B)、反応材料用開口部(36,37,36B,37B)及び不活性ガス用開口部(392〜394,392B,393B)を有する、
成膜装置。 - 請求項2記載の成膜装置であって、
前記排気口は前記ミスト噴射ヘッド部の最外側に設けられ、
前記底板は、前記ミスト噴射ヘッド部の底面への取り付け時に、前記排気口を覆うことなく配置される、
成膜装置。 - 請求項2または請求項3に記載の成膜装置であって、
前記ミスト噴射ヘッド部の底面は第1及び第2の方向で規定される矩形状を呈し、
前記原料溶液噴出口、前記反応材料噴出口、及び前記不活性ガス噴出口はそれぞれ平面視して前記第1の方向を長手方向としたスリット状に形成され、
前記原料溶液用開口部、前記反応材料用開口部及び前記不活性ガス用開口部は、前記底板の前記ミスト噴射ヘッド部の底面への取り付け時において、前記原料溶液噴出口、前記反応材料噴出口、及び前記不活性ガス噴出口と平面視合致した同一形状で形成される、
成膜装置。 - 請求項1から請求項4のうち、いずれか1項に記載の成膜装置であって、
前記底板は耐腐食性を有する材料により構成される、
成膜装置。 - 請求項2または請求項3に記載の成膜装置であって、
前記ミスト噴射ヘッド部は、
前記原料溶液噴出口より前記原料溶液の噴射を行う原料溶液噴射用ノズル部(N1,N1B)を備え、
前記原料溶液噴射用ノズル部は、
第1の空洞部(11)と、
前記第1の空洞部内に、ミスト化された前記原料溶液を供給する原料溶液供給部(1)と、
前記第1の空洞部の底面より離れた位置において、前記第1の空洞部内の側面に設けられ、前記原料溶液噴出口と接続されている原料溶液排出部(41,41B)と、
前記第1の空洞内に配設されている、前記原料溶液の流れを整える第1の整流部(6)とを含む、
成膜装置。 - 請求項6記載の成膜装置であって、
前記ミスト噴射ヘッド部は、
前記原料溶液噴射用ノズル部に水平方向に沿って配設されており、前記反応材料を噴射する反応材料噴射用ノズル部(N2,N3,N3B)をさらに備える、
成膜装置。 - 請求項2記載の成膜装置であって、
前記不活性ガス噴出口は第1及び第2の不活性ガス噴出口(193,192,193B,192B)を含み、
前記反応材料は第1及び第2の反応材料を含み、前記反応材料噴出口は前記第1及び第2の反応材料を噴出するための第1及び第2の反応材料噴出口(16,17,16B,17B)を含み、
前記ミスト噴射ヘッド部は、
底面に設けられる前記原料溶液噴出口より、前記原料溶液を噴射する原料溶液噴射用ノズル部(N1)と、
前記原料溶液噴射用ノズル部を挟んで配設されており、底面に設けられる前記第1及び第2の反応材料噴出口より、前記第1及び第2の反応材料を噴射する第1及び第2の反応材料噴射用ノズル部(N2,N3)と、
底面に設けられる前記第1及び第2の不活性ガス噴出口より、不活性ガスを噴射する第1及び第2の不活性ガス噴射部(83,82)とを備え、
前記第1の不活性ガス噴射部は前記原料溶液噴射用ノズル部と前記第1の反応材料噴射用ノズル部との間に設けられ、前記第2の不活性ガス噴射部は前記原料溶液噴射用ノズル部と前記第2の反応材料噴射用ノズル部との間に設けられる、
成膜装置。 - 請求項2記載の成膜装置であって、
前記不活性ガス噴出口は第1及び第2の不活性ガス噴出口(193,192,193B,192B)を含み、
前記反応材料は第1及び第2の反応材料を含み、前記反応材料噴出口は前記第1及び第2の反応材料を噴出するための第1及び第2の反応材料噴出口(16,17,16B,17B)を含み、
前記ミスト噴射ヘッド部は、
前記原料溶液の噴射に加え、前記第1の反応材料の噴射を行う原料溶液噴射用ノズル部(N1B)と、
前記原料溶液噴射用ノズル部と隣接して配設されており、底面に前記原料溶液噴出口、前記第1及び第2の反応材料噴出口、並びに前記第1及び第2の不活性ガス噴出口を有する反応材料噴射用ノズル部(N3B)とを備え、
前記原料溶液噴射用ノズル部は、
前記原料溶液及び前記第1の反応材料を前記反応材料噴射用ノズル部に排出可能な原料溶液排出部及び第1の反応材料排出部(41B,42B)を有し、
前記反応材料噴射用ノズル部は、
前記第1及び第2の不活性ガス噴出口よりそれぞれ不活性ガスを噴出し、前記第2の反応材料噴出口より前記第2の反応材料を噴出するとともに、
前記原料溶液噴射用ノズル部の前記原料溶液排出部及び前記第1の反応材料排出部より排出される前記原料溶液及び前記第1の反応材料を前記原料溶液噴出口及び第1の前記反応材料噴出口に導く第1及び第2の内部通路(61B,63B)を有する、
成膜装置。 - 請求項7記載の成膜装置であって、
前記反応材料噴射用ノズル部は、
第2の空洞部(12,13,13B)と、
前記第2の空洞部内に前記反応材料を供給する反応材料供給部(2,3,3B)と、
前記第2の空洞部の底面より離れた位置において、前記第2の空洞部内の側面に設けられ、前記反応材料噴出口と接続されている反応材料排出部(42,42B,43)とを、有する、
成膜装置。 - 請求項10記載の成膜装置であって、
前記ミスト噴射ヘッド部は、
排気口より排気処理を行う排気用ノズル部(N4)をさらに備え、
前記排気用ノズル部は、
前記原料溶液噴射用ノズル部が前記原料溶液を噴出している流量と、前記反応材料噴射用ノズル部が前記反応材料を噴出している流量との和以上の流量で、前記排気処理を行う、
成膜装置。 - 請求項11記載の成膜装置であて、
前記排気用ノズル部は、
第3の空洞部(14)と、
前記第3の空洞部の底面より離れた位置において、前記第3の空洞部内の側面に設けられ、前記排気口と接続されている排気物導入部(44)と、
前記排気物導入部より上方に配設されており、排気物を前記第3の空洞部から前記排気用ノズル部外へと排出する排気物出口部(4)とを含む、
成膜装置。 - 請求項11記載の成膜装置であって、
前記ミスト噴射ヘッド部は、
前記原料溶液噴射用ノズル部と前記排気用ノズル部との間に設けられている吹き抜け部(58)と、
前記吹き抜け部を、前記基板の配置側から塞ぐベースプレート部(20,20B)とをさらに備える、
成膜装置。 - 請求項13記載の成膜装置であって、
前記ベースプレート部は、
不活性ガスを噴出する第3の不活性ガス噴出口(194)が配設されている、
成膜装置。 - 請求項11記載の成膜装置であって、
前記原料溶液噴射用ノズル部、前記反応材料噴射用ノズル部及び前記排気用ノズル部は、水平方向に並んで配置されており、
少なくとも前記排気用ノズル部は、
前記ミスト噴射ヘッド部の最外側に位置している、
成膜装置。
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- 2016-02-19 TW TW105104897A patent/TWI583818B/zh active
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2018
- 2018-07-17 HK HK18109204.3A patent/HK1249767A1/zh unknown
Patent Citations (5)
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JPH072548A (ja) * | 1993-01-11 | 1995-01-06 | Glaverbel Sa | 熱分解によってコーティングを形成する装置および方法 |
JP2006108311A (ja) * | 2004-10-04 | 2006-04-20 | Taiyo Nippon Sanso Corp | 気相成長装置 |
US20110244130A1 (en) * | 2008-10-14 | 2011-10-06 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E. V. | Method for Producing Photocatalytically Active Titanium Dioxide Layers |
WO2012124047A1 (ja) * | 2011-03-15 | 2012-09-20 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
WO2014068778A1 (ja) * | 2012-11-05 | 2014-05-08 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
Also Published As
Publication number | Publication date |
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HK1249767A1 (zh) | 2018-11-09 |
DE112015007036T5 (de) | 2018-07-19 |
WO2017068624A1 (ja) | 2017-04-27 |
US20180264498A1 (en) | 2018-09-20 |
CN108138320B (zh) | 2020-11-03 |
KR20180054730A (ko) | 2018-05-24 |
TW201715074A (zh) | 2017-05-01 |
CN108138320A (zh) | 2018-06-08 |
TWI583818B (zh) | 2017-05-21 |
KR102173962B1 (ko) | 2020-11-04 |
JP6426298B2 (ja) | 2018-11-21 |
US11124877B2 (en) | 2021-09-21 |
DE112015007036B4 (de) | 2023-09-28 |
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