JPWO2016174877A1 - Itoスパッタリングターゲット材 - Google Patents
Itoスパッタリングターゲット材 Download PDFInfo
- Publication number
- JPWO2016174877A1 JPWO2016174877A1 JP2017515394A JP2017515394A JPWO2016174877A1 JP WO2016174877 A1 JPWO2016174877 A1 JP WO2016174877A1 JP 2017515394 A JP2017515394 A JP 2017515394A JP 2017515394 A JP2017515394 A JP 2017515394A JP WO2016174877 A1 JPWO2016174877 A1 JP WO2016174877A1
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- Japan
- Prior art keywords
- target material
- sno
- ito
- sputtering target
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013077 target material Substances 0.000 title claims abstract description 109
- 238000005477 sputtering target Methods 0.000 title claims abstract description 31
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 84
- 239000000843 powder Substances 0.000 claims description 45
- 238000010304 firing Methods 0.000 claims description 40
- 239000002245 particle Substances 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 7
- 238000005336 cracking Methods 0.000 abstract description 12
- 238000004544 sputter deposition Methods 0.000 abstract description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000011156 evaluation Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000001629 suppression Effects 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 238000004663 powder metallurgy Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Chemistry (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015092830 | 2015-04-30 | ||
JP2015092830 | 2015-04-30 | ||
PCT/JP2016/050020 WO2016174877A1 (ja) | 2015-04-30 | 2016-01-04 | Itoスパッタリングターゲット材 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2016174877A1 true JPWO2016174877A1 (ja) | 2018-02-22 |
Family
ID=57199250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017515394A Pending JPWO2016174877A1 (ja) | 2015-04-30 | 2016-01-04 | Itoスパッタリングターゲット材 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2016174877A1 (zh) |
KR (1) | KR20170142169A (zh) |
CN (1) | CN107250426A (zh) |
TW (1) | TWI660056B (zh) |
WO (1) | WO2016174877A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111440000B (zh) * | 2020-04-24 | 2022-04-29 | 河北恒博新材料科技股份有限公司 | 一种大尺寸旋转陶瓷靶材制备方法 |
JP7394085B2 (ja) * | 2021-04-05 | 2023-12-07 | Jx金属株式会社 | スパッタリングターゲット及びその製造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08188871A (ja) * | 1994-11-10 | 1996-07-23 | Hitachi Metals Ltd | 透明導電膜形成用ito焼結体 |
JP2000233969A (ja) * | 1998-12-08 | 2000-08-29 | Tosoh Corp | Itoスパッタリングターゲットおよび透明導電膜の製造方法 |
JP2004359982A (ja) * | 2003-06-03 | 2004-12-24 | Nikko Materials Co Ltd | Itoスパッタリングターゲット及びその製造方法 |
WO2009020091A1 (ja) * | 2007-08-06 | 2009-02-12 | Mitsui Mining & Smelting Co., Ltd. | Ito焼結体およびitoスパッタリングターゲット |
JP2010150093A (ja) * | 2008-12-25 | 2010-07-08 | Tosoh Corp | 透明導電膜用焼結体の製造方法 |
JP2010150611A (ja) * | 2008-12-25 | 2010-07-08 | Tosoh Corp | 透明導電膜用焼結体及びスパッタリングターゲット並びにその製造方法 |
JP2010255022A (ja) * | 2009-04-22 | 2010-11-11 | Sumitomo Metal Mining Co Ltd | Itoスパッタリングターゲットとその製造方法 |
JP2012126937A (ja) * | 2010-12-13 | 2012-07-05 | Sumitomo Metal Mining Co Ltd | Itoスパッタリングターゲットとその製造方法 |
WO2014156234A1 (ja) * | 2013-03-29 | 2014-10-02 | Jx日鉱日石金属株式会社 | Itoスパッタリングターゲット及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007008752A (ja) * | 2005-06-29 | 2007-01-18 | Mitsui Mining & Smelting Co Ltd | 酸化インジウム−酸化錫粉末及びそれを用いたスパッタリングターゲット並びに酸化インジウム−酸化錫粉末の製造方法 |
JP2009040620A (ja) * | 2007-08-06 | 2009-02-26 | Mitsui Mining & Smelting Co Ltd | Ito焼結体およびitoスパッタリングターゲット |
CN101580379B (zh) * | 2009-06-29 | 2012-05-16 | 北京航空航天大学 | 掺铌纳米铟锡氧化物粉末及其高密度溅射镀膜靶材的制备方法 |
CN102718499B (zh) * | 2012-07-10 | 2014-02-26 | 国家钽铌特种金属材料工程技术研究中心 | 一种含In4Sn3O12相ITO溅射靶的制造方法 |
WO2015125588A1 (ja) * | 2014-02-18 | 2015-08-27 | 三井金属鉱業株式会社 | Itoスパッタリングターゲット材およびその製造方法 |
-
2016
- 2016-01-04 WO PCT/JP2016/050020 patent/WO2016174877A1/ja active Application Filing
- 2016-01-04 KR KR1020177030294A patent/KR20170142169A/ko unknown
- 2016-01-04 CN CN201680011407.1A patent/CN107250426A/zh active Pending
- 2016-01-04 JP JP2017515394A patent/JPWO2016174877A1/ja active Pending
- 2016-01-26 TW TW105102324A patent/TWI660056B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08188871A (ja) * | 1994-11-10 | 1996-07-23 | Hitachi Metals Ltd | 透明導電膜形成用ito焼結体 |
JP2000233969A (ja) * | 1998-12-08 | 2000-08-29 | Tosoh Corp | Itoスパッタリングターゲットおよび透明導電膜の製造方法 |
JP2004359982A (ja) * | 2003-06-03 | 2004-12-24 | Nikko Materials Co Ltd | Itoスパッタリングターゲット及びその製造方法 |
WO2009020091A1 (ja) * | 2007-08-06 | 2009-02-12 | Mitsui Mining & Smelting Co., Ltd. | Ito焼結体およびitoスパッタリングターゲット |
JP2010150093A (ja) * | 2008-12-25 | 2010-07-08 | Tosoh Corp | 透明導電膜用焼結体の製造方法 |
JP2010150611A (ja) * | 2008-12-25 | 2010-07-08 | Tosoh Corp | 透明導電膜用焼結体及びスパッタリングターゲット並びにその製造方法 |
JP2010255022A (ja) * | 2009-04-22 | 2010-11-11 | Sumitomo Metal Mining Co Ltd | Itoスパッタリングターゲットとその製造方法 |
JP2012126937A (ja) * | 2010-12-13 | 2012-07-05 | Sumitomo Metal Mining Co Ltd | Itoスパッタリングターゲットとその製造方法 |
WO2014156234A1 (ja) * | 2013-03-29 | 2014-10-02 | Jx日鉱日石金属株式会社 | Itoスパッタリングターゲット及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2016174877A1 (ja) | 2016-11-03 |
TW201638364A (zh) | 2016-11-01 |
TWI660056B (zh) | 2019-05-21 |
CN107250426A (zh) | 2017-10-13 |
KR20170142169A (ko) | 2017-12-27 |
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