JPWO2016157695A1 - 太陽電池素子、太陽電池モジュール、および太陽電池素子の製造方法 - Google Patents
太陽電池素子、太陽電池モジュール、および太陽電池素子の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 185
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 178
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 169
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 169
- 239000010703 silicon Substances 0.000 claims abstract description 169
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- 238000005530 etching Methods 0.000 claims description 30
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 26
- 239000002019 doping agent Substances 0.000 claims description 21
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- 238000010586 diagram Methods 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000007865 diluting Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
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- 229920001187 thermosetting polymer Polymers 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
本実施の形態に係る太陽電池モジュールの平面構成の一例について、図1を用いて説明する。
太陽電池モジュール100の主たる構成要素である太陽電池素子1の構造について説明する。
次に、シリコン基板10が有するテクスチャ構造について説明する。
図6Aは、実施の形態に係る太陽電池素子の拡大断面図である。具体的には、図6Aは、シリコン基板10、非晶質シリコン層20および透明電極30の谷部付近の積層構造を拡大した断面図であり、谷線方向から見た断面図である。図6Aの断面図は、非晶質シリコン層20の頂部212および谷部213を結ぶ傾斜部214と、隣接する2つの傾斜部214に挟まれた谷部213とを示している。図6Aに示すように、非晶質シリコン層20は、シリコン基板10の表面のテクスチャ構造を反映した凹凸形状を有しており、また、透明電極30も当該テクスチャ構造を反映した凹凸形状を有している。
次に、上述した特徴的なシリコン層20の構造を有する太陽電池素子1の製造方法について説明する。
本実施の形態に係る太陽電池素子1は、複数の角錐が2次元状に配列されたテクスチャ構造を第1主面に有するシリコン基板10と、シリコン基板10の第1主面に形成され、上記テクスチャ構造を反映した凹凸形状を有する非晶質シリコン層20とを備え、非晶質シリコン層20は、凹凸形状の頂部、および、当該頂部と谷部213とを結ぶ傾斜部214において、非晶質であり、谷部213においてシリコン基板10の基板面から略垂直方向に向けて柱状に成長し、かつ、谷部213のうちシリコン基板10と接する下端部と反対側の上端部において基板面に略平行な方向に離散的に存在する結晶領域213cを有し、非晶質シリコン層20を断面視した場合、谷部213における結晶領域213cの谷部213に対する占有率は、谷部213におけるアモルファス領域213aの谷部213に対する占有率よりも高い。
以上、本発明に係る太陽電池素子1、太陽電池モジュール100、および太陽電池素子の製造方法について、上記実施の形態に基づいて説明したが、本発明は、上記の実施の形態に限定されるものではない。
10 シリコン基板
20 非晶質シリコン層(第1非晶質シリコン層)
21 誘電体膜(第1誘電体膜)
22 n型非晶質シリコン膜(第1非晶質シリコン膜)
40 非晶質シリコン層(第2非晶質シリコン層)
41 誘電体膜(第2誘電体膜)
42 p型非晶質シリコン膜(第2非晶質シリコン膜)
100 太陽電池モジュール
170A 表面充填部材
170B 裏面充填部材
180A 表面保護部材
180B 裏面保護部材
213 谷部
213a アモルファス領域(非晶質領域)
213c 結晶領域
214 傾斜部
Claims (11)
- 複数の角錐が2次元状に配列されたテクスチャ構造を第1主面に有するシリコン基板と、
前記シリコン基板の前記第1主面上に形成され、前記テクスチャ構造を反映した凹凸形状を有する第1非晶質シリコン層とを備え、
前記第1非晶質シリコン層は、
前記凹凸形状の頂部、および、当該頂部と谷部とを結ぶ傾斜部において非晶質であり、
前記凹凸形状の谷部において前記シリコン基板の基板面から略垂直方向に向けて柱状に成長し、かつ、前記谷部のうち前記シリコン基板と接する下端部と反対側の上端部において前記基板面に略平行な方向に離散的に存在する結晶領域を有し、
前記第1非晶質シリコン層を断面視した場合、前記谷部における前記結晶領域の前記谷部に対する占有率は、前記谷部における非晶質領域の前記谷部に対する占有率よりも高い
太陽電池素子。 - 前記谷部は、前記太陽電池素子を断面視した場合、曲率半径が150nm以下のアール形状を有する
請求項1に記載の太陽電池素子。 - 前記太陽電池素子を断面視した場合、前記谷部はアール形状を有し、前記谷部を挟む前記シリコン基板の2つの角錐面のそれぞれを含む2つの直線の交点から前記谷部を見た場合の臨み角は60度以下である
請求項1または2に記載の太陽電池素子。 - 前記第1非晶質シリコン層は、前記シリコン基板の導電型と同じ導電型を有する
請求項1〜3のいずれか1項に記載の太陽電池素子。 - 前記第1非晶質シリコン層は、
前記第1主面上に形成された第1誘電体膜と、
前記第1誘電体膜の上に形成された、前記シリコン基板の導電型と同じ導電型のドーパントを含む第1非晶質シリコン膜とを有する
請求項4に記載の太陽電池素子。 - 前記シリコン基板は、さらに、前記テクスチャ構造を、前記第1主面と背向する第2主面に有し、
前記太陽電池素子は、さらに、
前記シリコン基板の前記第2主面上に配置され、前記テクスチャ構造を反映した凹凸形状を有し、前記シリコン基板の導電型と逆の導電型を有する第2非晶質シリコン層を備え、
前記第1非晶質シリコン層および前記第2非晶質シリコン層を断面視した場合、前記第1非晶質シリコン層の前記谷部における前記結晶領域の前記谷部に対する占有率は、前記第2非晶質シリコン層の前記谷部における前記結晶領域の前記谷部に対する占有率よりも高い
請求項4または5に記載の太陽電池素子。 - 前記第2非晶質シリコン層は、
前記第2主面上に形成された第2誘電体膜と、
前記第2誘電体膜の上に形成された、前記シリコン基板の導電型と逆の導電型のドーパントを含む第2非晶質シリコン膜とを有する
請求項6に記載の太陽電池素子。 - 2次元状に配置された、請求項1〜7のいずれか1項に記載の複数の太陽電池素子と、
前記複数の太陽電池素子の表面側に配置された表面保護部材と、
前記複数の太陽電池素子の裏面側に配置された裏面保護部材と、
前記複数の太陽電池素子と前記表面保護部材との間に配置された表面充填部材と、
前記複数の太陽電池素子と前記裏面保護部材との間に配置された裏面充填部材とを備える
太陽電池モジュール。 - シリコン基板の(100)面をエッチングして、複数の角錐が2次元状に配列されたテクスチャ構造を前記シリコン基板の第1主面に形成する第1エッチング工程と、
前記第1エッチング工程を経た前記シリコン基板の第1主面を等方性エッチングする第2エッチング工程と、
前記第2エッチング工程を経た、前記テクスチャ構造が形成された前記第1主面を、フッ酸および過酸化水素を含有する混合溶液に浸漬して、前記第1主面を表面処理する表面処理工程と、
前記表面処理された前記第1主面上に、シリコンを含む原材料ガスを用いた気相成長法により前記テクスチャ構造を反映した凹凸形状を有する第1非晶質シリコン層を形成するシリコン層形成工程とを含む
太陽電池素子の製造方法。 - 前記第2エッチング工程では、複数の角錐の間にアール形状を有する凹部を形成し、
前記表面処理工程では、前記凹部の表面を選択的に表面処理し、
前記シリコン層形成工程では、前記凹凸形状の谷部において、前記シリコン基板の基板面から略垂直方向に向けて柱状に成長し、かつ、前記谷部のうち前記シリコン基板と接する下端部と反対側の上端部において前記基板面に略平行な方向に離散的に存在する結晶領域を形成し、
前記第1非晶質シリコン層を断面視した場合、前記谷部における前記結晶領域の前記谷部に対する占有率は、前記谷部における非晶質領域の前記谷部に対する占有率よりも高い
請求項9に記載の太陽電池素子の製造方法。 - 前記第1エッチング工程では、シリコン基板の(100)面をエッチングして、複数の角錐が2次元状に配列されたテクスチャ構造を前記シリコン基板の第1主面および当該第1主面に背向する第2主面に形成し、
前記第2エッチング工程では、前記シリコン基板の前記第1主面および前記第2主面を等方性エッチングし、
前記表面処理工程では、前記第1主面および前記第2主面を、フッ酸および過酸化水素を含有する混合溶液に浸漬して、前記第1主面および前記第2主面を表面処理し、
前記シリコン層形成工程では、前記表面処理された前記第1主面上に、前記シリコン基板の導電型と同じ導電型のドーパントおよびシリコンを含む原材料ガスを用いた気相成長法により、前記シリコン基板の導電型と同じ導電型を有する第1非晶質シリコン層を形成し、前記表面処理された前記第2主面上に、前記シリコン基板の導電型と逆の導電型のドーパントおよびシリコンを含む原材料ガスを用いた気相成長法により、前記シリコン基板の導電型と逆の導電型を有する第2非晶質シリコン層を形成し、
前記第1非晶質シリコン層および前記第2非晶質シリコン層を断面視した場合、前記第1非晶質シリコン層の前記谷部における前記結晶領域の前記谷部に対する占有率は、前記第2非晶質シリコン層の前記谷部における前記結晶領域の前記谷部に対する占有率よりも高い
請求項9または10に記載の太陽電池素子の製造方法。
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