JPWO2016125803A1 - 太陽電池素子およびその製造方法 - Google Patents
太陽電池素子およびその製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 claims description 41
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- 229910052782 aluminium Inorganic materials 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
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- 229910052710 silicon Inorganic materials 0.000 claims description 7
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- 229910052796 boron Inorganic materials 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
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- 239000011574 phosphorus Substances 0.000 description 7
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- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
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- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
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- 229920001249 ethyl cellulose Polymers 0.000 description 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
図1〜3に、本実施形態に係る太陽電池素子10を示す。太陽電池素子10は、主として光が入射する表(おもて)側に位置する第1面10aと、この第1面10aの反対側(裏側)に位置する第2面10bとを有する。
次に、太陽電池素子10の製造方法の各工程について、詳細に説明する。
変形例1に係る実施形態は、図6に示すように、第2面10b側において、パッシベーシン膜4と基板1との間に、パッシベーション膜4よりも薄い第1酸化シリコン膜11が介在している。他の構成については上述した実施形態と同様であるので説明を省略する。
変形例2に係る実施形態は、図7に示すように、パッシベーション膜4と第3電極8cとの間に、パッシベーション膜4よりも薄い第2酸化シリコン膜12が介在している。他の構成については上述した実施形態と同様であるので説明を省略する。
変形例3に係る実施形態は、第1電極8aを形成するための導電性ペースト(第3ペースト18)の金属成分が、主としてアルミニウムを含みさらに銀を含む。他の構成については上述した実施形態と同様であるので説明を省略する。
変形例4に係る実施形態は、第2電極8bを形成するための導電性ペースト(第2ペースト17)の金属成分が、主成分として銀を含み、さらにアルミニウムを含む。他の構成については上述した実施形態と同様である。
1a:第1面
1b:第2面
2 :第1半導体層(p型半導体層)
3 :第2半導体層(n型半導体層)
4 :パッシベーション膜
5 :反射防止膜
7 :表面電極
7a:バスバー電極
7b:フィンガー電極
7c:サブフィンガー電極
8 :裏面電極
8a:第1電極
8b:第2電極
8c:第3電極
10 :太陽電池素子
10a:第1面
10b:第2面
11 :第1酸化シリコン膜
12 :第2酸化シリコン膜
13 :BSF層
16 :第1ペースト
17 :第2ペースト
18 :第3ペースト(導電性ペーストI)
19 :第4ペースト(導電性ペーストII)
Claims (10)
- 第1面および該第1面の反対側に位置する第2面を有する半導体基板と、
該半導体基板の前記第2面に配置されているパッシベーション膜と、
該パッシベーション膜を複数箇所で貫通した状態で前記半導体基板に接している第1電極と、
平面視して該第1電極に重ならない位置で、前記パッシベーション膜の上に、または前記パッシベーション膜を貫通した状態で、前記半導体基板の上に直線状に配置されている第2電極と、
該第2電極の一部、前記パッシベーション膜および前記第1電極のそれぞれを覆っているとともに、前記第1電極および前記第2電極のそれぞれに接している第3電極と、を備え、
前記第1電極の電気抵抗率が前記第3電極の電気抵抗率よりも小さい太陽電池素子。 - 前記半導体基板の前記第1面の上に配置された反射防止膜をさらに備える、請求項1に記載の太陽電池素子。
- 前記半導体基板の前記第2面がp型シリコンを含み、前記パッシベーション膜が酸化アルミニウムを主成分とする材料からなる、請求項1または2に記載の太陽電池素子。
- 前記パッシベーション膜と前記半導体基板との間に、前記パッシベーション膜よりも薄い第1酸化シリコン膜が介在している、請求項3に記載の太陽電池素子。
- 前記パッシベーション膜と前記第3電極との間に配置された第2酸化シリコン膜をさらに備え、該第2酸化シリコン膜は前記パッシベーション膜よりも薄い、請求項3または4に記載の太陽電池素子。
- 前記第1電極および前記第3電極がアルミニウムを主成分とする材料からなる、請求項2乃至5のいずれかに記載の太陽電池素子。
- 前記第2電極が銀を主成分とする材料からなる、請求項2乃至6のいずれかに記載の太陽電池素子。
- 前記第2電極がアルミニウムを含有している、請求項7に記載の太陽電池素子。
- 前記第1電極が銀を含有している、請求項2乃至8のいずれかに記載の太陽電池素子。
- 請求項1乃至9のいずれかに記載の太陽電池素子の製造方法であって、導電性ペーストIを焼成して前記第1電極を形成した後に、前記導電性ペーストIと同一材料の導電性ペーストIIを前記導電性ペーストIよりも低い温度で焼成して前記第3電極を形成する太陽電池素子の製造方法。
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