JPWO2016104004A1 - 共振子の製造方法 - Google Patents
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
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- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0081—Thermal properties
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2463—Clamped-clamped beam resonators
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- H—ELECTRICITY
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- H03H9/2468—Tuning fork resonators
- H03H9/2478—Single-Ended Tuning Fork resonators
- H03H9/2489—Single-Ended Tuning Fork resonators with more than two fork tines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
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- Microelectronics & Electronic Packaging (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
21 Si酸化膜
23 圧電薄膜
34 Siウエハ
35 Si酸化膜
37 圧電薄膜
53 共振子(圧電共振子)
61 Si酸化膜
63 圧電薄膜
Claims (9)
- 縮退状態にあるSiウエハの表面にSi酸化膜を形成するステップを含み、
前記Si酸化膜の厚さは、前記Siウエハの不純物のドープ量に応じて設定される、共振子の製造方法。 - 前記不純物のドープ量は、前記Siウエハの面内方向の不純物のドープ量の平均で特定される、請求項1に記載の共振子の製造方法。
- 前記Siウエハの表面に圧電薄膜を形成するステップをさらに含み、
前記圧電薄膜の厚さは、前記Siウエハの前記不純物のドープ量の面内方向における分布に応じて設定される、請求項1又は2に記載の共振子の製造方法。 - 前記圧電薄膜の厚さの分布は、前記不純物のドープ量及び前記共振子の弾性定数の温度係数に基づいて設定される、請求項3に記載の共振子の製造方法。
- 前記Siウエハの表面に共振子構成薄膜を形成するステップをさらに含み、
前記共振子構成薄膜の厚さは、前記Siウエハの前記不純物のドープ量の面内方向における分布に応じて設定される、請求項1又は2に記載の共振子の製造方法。 - 前記共振子構成薄膜の厚さの分布は、前記不純物のドープ量及び前記共振子の弾性定数の温度係数に基づいて設定される、請求項5に記載の共振子の製造方法。
- 前記共振子構成薄膜は、前記Siウエハ上に形成される圧電薄膜、前記圧電薄膜を挟み込むように形成される上側電極及び下側電極、前記Siウエハと前記下側電極との間に形成される付加薄膜層、前記上側電極の上に形成される付加薄膜層のうちのいずれか1つである、請求項5又は6に記載の共振子の製造方法。
- 縮退状態にあるSiウエハの表面に圧電薄膜を形成するステップを含み、
前記圧電薄膜の厚さは、前記Siウエハの不純物のドープ量の面内方向における分布に応じて設定される、共振子の製造方法。 - 縮退状態にあるSiウエハと、
前記Siウエハの表面に形成された圧電薄膜と、を備え、
前記圧電薄膜は、前記Siウエハの不純物のドープ量の面内方向における分布に応じて設定された厚さを有する、ウエハ体。
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JP6245265B2 (ja) * | 2013-09-20 | 2017-12-13 | 株式会社村田製作所 | 振動装置及びその製造方法 |
JP6489234B2 (ja) | 2015-12-02 | 2019-03-27 | 株式会社村田製作所 | 圧電素子、圧電マイクロフォン、圧電共振子及び圧電素子の製造方法 |
CN106249947B (zh) * | 2016-07-22 | 2019-04-19 | 京东方科技集团股份有限公司 | 一种基板及显示装置 |
US10339776B2 (en) * | 2017-11-14 | 2019-07-02 | Sensormatic Electronics Llc | Security marker |
JP7097074B2 (ja) * | 2019-02-07 | 2022-07-07 | 国立研究開発法人産業技術総合研究所 | 窒化物圧電体およびそれを用いたmemsデバイス |
TWI809455B (zh) * | 2021-07-20 | 2023-07-21 | 大陸商茂丞(鄭州)超聲科技有限公司 | 懸浮式壓電超音波感測器及其製作方法 |
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US10727807B2 (en) | 2020-07-28 |
CN107112967A (zh) | 2017-08-29 |
SG11201705232YA (en) | 2017-07-28 |
CN107112967B (zh) | 2020-07-07 |
WO2016104004A1 (ja) | 2016-06-30 |
JP6395008B2 (ja) | 2018-09-26 |
US20170272050A1 (en) | 2017-09-21 |
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