JP7097074B2 - 窒化物圧電体およびそれを用いたmemsデバイス - Google Patents
窒化物圧電体およびそれを用いたmemsデバイス Download PDFInfo
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- JP7097074B2 JP7097074B2 JP2019020273A JP2019020273A JP7097074B2 JP 7097074 B2 JP7097074 B2 JP 7097074B2 JP 2019020273 A JP2019020273 A JP 2019020273A JP 2019020273 A JP2019020273 A JP 2019020273A JP 7097074 B2 JP7097074 B2 JP 7097074B2
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- piezoelectric
- constant
- piezoelectric material
- aluminum nitride
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- 239000000463 material Substances 0.000 title claims description 23
- 150000004767 nitrides Chemical class 0.000 title description 2
- 239000000126 substance Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 36
- 229910052706 scandium Inorganic materials 0.000 description 20
- 239000013078 crystal Substances 0.000 description 17
- 238000004364 calculation method Methods 0.000 description 16
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 14
- 238000004088 simulation Methods 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 12
- 229910052726 zirconium Inorganic materials 0.000 description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 235000002639 sodium chloride Nutrition 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
(実施形態1)
Claims (5)
- 化学式Al1-XZrXNで表され、Xは0.315以上で0.4以下の範囲にあることを特徴とする圧電体。
- Xが0.328以上で0.391以下の範囲にあることを特徴とする請求項1に記載の圧電体。
- 格子定数比c/aが1.28以上で1.43以下の範囲にあることを特徴とする請求項1に記載の圧電体。
- 格子定数比c/aが1.28以上で1.39以下の範囲にあることを特徴とする請求項2に記載の圧電体。
- 請求項1~4の何れか1項に記載の圧電体を用いたMEMSデバイス。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019020273A JP7097074B2 (ja) | 2019-02-07 | 2019-02-07 | 窒化物圧電体およびそれを用いたmemsデバイス |
PCT/JP2019/046057 WO2020161997A1 (ja) | 2019-02-07 | 2019-11-26 | 窒化物圧電体およびそれを用いたmemsデバイス |
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JP2019020273A JP7097074B2 (ja) | 2019-02-07 | 2019-02-07 | 窒化物圧電体およびそれを用いたmemsデバイス |
Publications (3)
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JP2020129572A JP2020129572A (ja) | 2020-08-27 |
JP2020129572A5 JP2020129572A5 (ja) | 2021-09-30 |
JP7097074B2 true JP7097074B2 (ja) | 2022-07-07 |
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JP2019020273A Active JP7097074B2 (ja) | 2019-02-07 | 2019-02-07 | 窒化物圧電体およびそれを用いたmemsデバイス |
Country Status (2)
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JP (1) | JP7097074B2 (ja) |
WO (1) | WO2020161997A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013046111A (ja) | 2011-08-22 | 2013-03-04 | Taiyo Yuden Co Ltd | 弾性波デバイス |
JP2013219743A (ja) | 2012-03-15 | 2013-10-24 | Taiyo Yuden Co Ltd | 弾性波デバイス |
WO2016104004A1 (ja) | 2014-12-26 | 2016-06-30 | 株式会社村田製作所 | 共振子の製造方法 |
JP2017147719A (ja) | 2016-02-17 | 2017-08-24 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 音響共振器及びその製造方法 |
US20180278230A1 (en) | 2017-03-23 | 2018-09-27 | Samsung Electro-Mechanics Co., Ltd. | Acoustic wave resonator |
-
2019
- 2019-02-07 JP JP2019020273A patent/JP7097074B2/ja active Active
- 2019-11-26 WO PCT/JP2019/046057 patent/WO2020161997A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013046111A (ja) | 2011-08-22 | 2013-03-04 | Taiyo Yuden Co Ltd | 弾性波デバイス |
JP2013219743A (ja) | 2012-03-15 | 2013-10-24 | Taiyo Yuden Co Ltd | 弾性波デバイス |
WO2016104004A1 (ja) | 2014-12-26 | 2016-06-30 | 株式会社村田製作所 | 共振子の製造方法 |
JP2017147719A (ja) | 2016-02-17 | 2017-08-24 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 音響共振器及びその製造方法 |
US20180278230A1 (en) | 2017-03-23 | 2018-09-27 | Samsung Electro-Mechanics Co., Ltd. | Acoustic wave resonator |
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Publication number | Publication date |
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JP2020129572A (ja) | 2020-08-27 |
WO2020161997A1 (ja) | 2020-08-13 |
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