JPWO2015050168A1 - 光受信回路及びその製造方法 - Google Patents
光受信回路及びその製造方法 Download PDFInfo
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- JPWO2015050168A1 JPWO2015050168A1 JP2015540526A JP2015540526A JPWO2015050168A1 JP WO2015050168 A1 JPWO2015050168 A1 JP WO2015050168A1 JP 2015540526 A JP2015540526 A JP 2015540526A JP 2015540526 A JP2015540526 A JP 2015540526A JP WO2015050168 A1 JPWO2015050168 A1 JP WO2015050168A1
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- photodiode
- transimpedance amplifier
- optical receiver
- receiver circuit
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- 230000003287 optical effect Effects 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 25
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009429 electrical wiring Methods 0.000 description 3
- 235000004348 Perilla frutescens Nutrition 0.000 description 2
- 244000124853 Perilla frutescens Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only Ge
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/693—Arrangements for optimizing the preamplifier in the receiver
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
Abstract
Description
Claims (11)
- フォトダイオードと、
前記フォトダイオードに電源を供給するトランスインピーダンスアンプと
を備え、
前記フォトダイオードのアノードと前記トランスインピーダンスアンプとの間の配線の特性インピーダンスが、前記フォトダイオードのカソードと前記トランスインピーダンスアンプとの間の配線の特性インピーダンスより高いことを特徴とする光受信回路。 - 前記フォトダイオードのアノードと前記トランスインピーダンスアンプとの間の配線の特性インピーダンスが、前記トランスインピーダンスアンプの入力インピーダンスより高いことを特徴とする請求項1に記載の光受信回路。
- 前記フォトダイオードのカソードと前記トランスインピーダンスアンプとの間の配線の特性インピーダンスが、前記トランスインピーダンスアンプの入力インピーダンスより低いことを特徴とする請求項1に記載の光受信回路。
- 前記フォトダイオードのカソードと前記トランスインピーダンスアンプとの間の配線の下層にグラウンドを有し、前記フォトダイオードのアノードと前記トランスインピーダンスアンプとの間の配線の下層にグラウンドを有しないことを特徴とする請求項1乃至3のいずれかに記載の光受信回路。
- 前記フォトダイオード及び前記トランスインピーダンスアンプがSi基板上に形成されることを特徴とする請求項1乃至4のいずれかに記載の光受信回路。
- 前記フォトダイオードのカソードと前記トランスインピーダンスアンプとの間の配線の下層に有するグラウンドがSi層で形成されることを特徴とする請求項5に記載の光受信回路。
- 前記フォトダイオード及び前記トランスインピーダンスアンプが、Si基板と表面Si層との間にSiO2層が挿入されるSOI基板上に形成されることを特徴とする請求項1乃至4のいずれかに記載の光受信回路。
- 前記フォトダイオードのカソードと前記トランスインピーダンスアンプとの間の配線の下層に有するグラウンドがSOI層で形成されることを特徴とする請求項7に記載の光受信回路。
- 前記フォトダイオードのカソードと前記トランスインピーダンスアンプとの間の配線に対応するSOI層の部分に選択的にイオン注入されていることを特徴とする請求項8に記載の光受信回路。
- フォトダイオードとトランスインピーダンスアンプとを備える光受信回路を製造する方法であって、
フォトダイオードのアノードとトランスインピーダンスアンプとの間の配線が形成されるべき部分のSOI層をエッチングするステップと、
フォトダイオードのカソードとトランスインピーダンスアンプとの間の配線が形成されるべき部分のSOI層にイオン注入するステップと、
SiO2層を形成するステップと、
前記フォトダイオードのカソードと前記トランスインピーダンスアンプとの間の配線を前記SiO2層上に形成するステップと
を含む方法。 - 前記イオン注入するステップは、Si変調器又はGe受光器を形成するためにキャリア注入を行うステップを含むことを特徴とする請求項10に記載の光受信回路を製造する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013206967 | 2013-10-02 | ||
JP2013206967 | 2013-10-02 | ||
PCT/JP2014/076307 WO2015050168A1 (ja) | 2013-10-02 | 2014-10-01 | 光受信回路及びその製造方法 |
Publications (2)
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JPWO2015050168A1 true JPWO2015050168A1 (ja) | 2017-03-09 |
JP6450318B2 JP6450318B2 (ja) | 2019-01-09 |
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JP2015540526A Active JP6450318B2 (ja) | 2013-10-02 | 2014-10-01 | 光受信回路及びその製造方法 |
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---|---|
US (1) | US10048124B2 (ja) |
EP (1) | EP3054489B1 (ja) |
JP (1) | JP6450318B2 (ja) |
CN (1) | CN105659394B (ja) |
WO (1) | WO2015050168A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6420222B2 (ja) * | 2015-10-08 | 2018-11-07 | 日本電信電話株式会社 | 光受信回路および光受信モジュール |
US10135545B2 (en) * | 2016-06-20 | 2018-11-20 | Oclaro Japan, Inc. | Optical receiver module and optical module |
JP2018191076A (ja) * | 2017-04-28 | 2018-11-29 | 富士通コンポーネント株式会社 | トランスインピーダンスアンプic及びこれを用いたic実装構造、並びに光送受信装置 |
JP2021044437A (ja) * | 2019-09-12 | 2021-03-18 | 住友電気工業株式会社 | 受光装置 |
WO2022029942A1 (ja) * | 2020-08-05 | 2022-02-10 | 日本電信電話株式会社 | 光受信機 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10290014A (ja) * | 1997-04-16 | 1998-10-27 | Mitsubishi Electric Corp | 受光素子用チップキャリア |
JP2003124884A (ja) * | 2001-10-09 | 2003-04-25 | Advantest Corp | データ伝送装置、光電変換回路、及び試験装置 |
JP2004095869A (ja) * | 2002-08-30 | 2004-03-25 | Mitsubishi Electric Corp | 受光素子および受光装置 |
JP2012142822A (ja) * | 2011-01-04 | 2012-07-26 | Fujitsu Ltd | 光受信装置および光送信装置 |
JP2012244293A (ja) * | 2011-05-17 | 2012-12-10 | Nippon Telegr & Teleph Corp <Ntt> | 光受信回路 |
JP2014192510A (ja) * | 2013-03-28 | 2014-10-06 | Japan Oclaro Inc | 光受信モジュール |
JP2015056704A (ja) * | 2013-09-10 | 2015-03-23 | 富士通株式会社 | 光受信モジュール |
Family Cites Families (3)
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US8877616B2 (en) * | 2008-09-08 | 2014-11-04 | Luxtera, Inc. | Method and system for monolithic integration of photonics and electronics in CMOS processes |
JP5566934B2 (ja) * | 2011-03-23 | 2014-08-06 | 株式会社東芝 | 電圧出力回路、及びアクティブケーブル |
JP5949415B2 (ja) * | 2012-10-09 | 2016-07-06 | 富士通株式会社 | 光受信回路及び光受信装置 |
-
2014
- 2014-10-01 JP JP2015540526A patent/JP6450318B2/ja active Active
- 2014-10-01 EP EP14850881.5A patent/EP3054489B1/en active Active
- 2014-10-01 WO PCT/JP2014/076307 patent/WO2015050168A1/ja active Application Filing
- 2014-10-01 CN CN201480051685.0A patent/CN105659394B/zh active Active
- 2014-10-01 US US15/023,354 patent/US10048124B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10290014A (ja) * | 1997-04-16 | 1998-10-27 | Mitsubishi Electric Corp | 受光素子用チップキャリア |
JP2003124884A (ja) * | 2001-10-09 | 2003-04-25 | Advantest Corp | データ伝送装置、光電変換回路、及び試験装置 |
JP2004095869A (ja) * | 2002-08-30 | 2004-03-25 | Mitsubishi Electric Corp | 受光素子および受光装置 |
JP2012142822A (ja) * | 2011-01-04 | 2012-07-26 | Fujitsu Ltd | 光受信装置および光送信装置 |
JP2012244293A (ja) * | 2011-05-17 | 2012-12-10 | Nippon Telegr & Teleph Corp <Ntt> | 光受信回路 |
JP2014192510A (ja) * | 2013-03-28 | 2014-10-06 | Japan Oclaro Inc | 光受信モジュール |
JP2015056704A (ja) * | 2013-09-10 | 2015-03-23 | 富士通株式会社 | 光受信モジュール |
Also Published As
Publication number | Publication date |
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EP3054489A4 (en) | 2017-08-30 |
EP3054489A1 (en) | 2016-08-10 |
WO2015050168A1 (ja) | 2015-04-09 |
EP3054489B1 (en) | 2020-01-22 |
CN105659394A (zh) | 2016-06-08 |
CN105659394B (zh) | 2017-06-16 |
US10048124B2 (en) | 2018-08-14 |
US20160245691A1 (en) | 2016-08-25 |
JP6450318B2 (ja) | 2019-01-09 |
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