JPWO2015040714A1 - Niボール、Ni核ボール、はんだ継手、フォームはんだ、はんだペースト - Google Patents
Niボール、Ni核ボール、はんだ継手、フォームはんだ、はんだペースト Download PDFInfo
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- JPWO2015040714A1 JPWO2015040714A1 JP2014501124A JP2014501124A JPWO2015040714A1 JP WO2015040714 A1 JPWO2015040714 A1 JP WO2015040714A1 JP 2014501124 A JP2014501124 A JP 2014501124A JP 2014501124 A JP2014501124 A JP 2014501124A JP WO2015040714 A1 JPWO2015040714 A1 JP WO2015040714A1
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- Prior art keywords
- ball
- solder
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- dose
- balls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910000679 solder Inorganic materials 0.000 title claims description 113
- 239000006260 foam Substances 0.000 title claims description 10
- 229910052745 lead Inorganic materials 0.000 claims abstract description 32
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 30
- 238000007747 plating Methods 0.000 claims description 92
- 239000012535 impurity Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 description 32
- 239000000243 solution Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 22
- 229910045601 alloy Inorganic materials 0.000 description 18
- 239000000956 alloy Substances 0.000 description 18
- 229910052776 Thorium Inorganic materials 0.000 description 15
- 239000010949 copper Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 229910052770 Uranium Inorganic materials 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
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- 230000002285 radioactive effect Effects 0.000 description 8
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- 229910052718 tin Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 229910017944 Ag—Cu Inorganic materials 0.000 description 6
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000921 elemental analysis Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
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- 238000000576 coating method Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000005260 alpha ray Effects 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 150000003460 sulfonic acids Chemical class 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000008139 complexing agent Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229940098779 methanesulfonic acid Drugs 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- JALQQBGHJJURDQ-UHFFFAOYSA-L bis(methylsulfonyloxy)tin Chemical compound [Sn+2].CS([O-])(=O)=O.CS([O-])(=O)=O JALQQBGHJJURDQ-UHFFFAOYSA-L 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000009689 gas atomisation Methods 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- -1 mercaptan compound Chemical class 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- YXTDAZMTQFUZHK-ZVGUSBNCSA-L (2r,3r)-2,3-dihydroxybutanedioate;tin(2+) Chemical compound [Sn+2].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O YXTDAZMTQFUZHK-ZVGUSBNCSA-L 0.000 description 1
- MNDGPLSORKUYSJ-UHFFFAOYSA-J 1,6,8,13-tetraoxa-7-stannaspiro[6.6]tridecane-2,5,9,12-tetrone Chemical compound O1C(=O)CCC(=O)O[Sn]21OC(=O)CCC(=O)O2 MNDGPLSORKUYSJ-UHFFFAOYSA-J 0.000 description 1
- DIZBQMTZXOUFTD-UHFFFAOYSA-N 2-(furan-2-yl)-3h-benzimidazole-5-carboxylic acid Chemical compound N1C2=CC(C(=O)O)=CC=C2N=C1C1=CC=CO1 DIZBQMTZXOUFTD-UHFFFAOYSA-N 0.000 description 1
- YYYOQURZQWIILK-UHFFFAOYSA-N 2-[(2-aminophenyl)disulfanyl]aniline Chemical compound NC1=CC=CC=C1SSC1=CC=CC=C1N YYYOQURZQWIILK-UHFFFAOYSA-N 0.000 description 1
- GEZAUFNYMZVOFV-UHFFFAOYSA-J 2-[(2-oxo-1,3,2$l^{5},4$l^{2}-dioxaphosphastannetan-2-yl)oxy]-1,3,2$l^{5},4$l^{2}-dioxaphosphastannetane 2-oxide Chemical compound [Sn+2].[Sn+2].[O-]P([O-])(=O)OP([O-])([O-])=O GEZAUFNYMZVOFV-UHFFFAOYSA-J 0.000 description 1
- JKFYKCYQEWQPTM-UHFFFAOYSA-N 2-azaniumyl-2-(4-fluorophenyl)acetate Chemical compound OC(=O)C(N)C1=CC=C(F)C=C1 JKFYKCYQEWQPTM-UHFFFAOYSA-N 0.000 description 1
- CQMNNMLVXSWLCH-UHFFFAOYSA-B 2-hydroxypropane-1,2,3-tricarboxylate;tin(4+) Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O CQMNNMLVXSWLCH-UHFFFAOYSA-B 0.000 description 1
- SKEZDZQGPKHHSH-UHFFFAOYSA-J 2-hydroxypropanoate;tin(4+) Chemical compound [Sn+4].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O SKEZDZQGPKHHSH-UHFFFAOYSA-J 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical compound [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- PWKSKIMOESPYIA-BYPYZUCNSA-N L-N-acetyl-Cysteine Chemical compound CC(=O)N[C@@H](CS)C(O)=O PWKSKIMOESPYIA-BYPYZUCNSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 229910021612 Silver iodide Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- RZESOXIJGKVAAX-UHFFFAOYSA-L [Ag++].[O-]C(=O)CCC([O-])=O Chemical compound [Ag++].[O-]C(=O)CCC([O-])=O RZESOXIJGKVAAX-UHFFFAOYSA-L 0.000 description 1
- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 description 1
- 229960004308 acetylcysteine Drugs 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005262 alpha decay Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- MGIWDIMSTXWOCO-UHFFFAOYSA-N butanedioic acid;copper Chemical compound [Cu].OC(=O)CCC(O)=O MGIWDIMSTXWOCO-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229940108925 copper gluconate Drugs 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- RSJOBNMOMQFPKQ-UHFFFAOYSA-L copper;2,3-dihydroxybutanedioate Chemical compound [Cu+2].[O-]C(=O)C(O)C(O)C([O-])=O RSJOBNMOMQFPKQ-UHFFFAOYSA-L 0.000 description 1
- DYROSKSLMAPFBZ-UHFFFAOYSA-L copper;2-hydroxypropanoate Chemical compound [Cu+2].CC(O)C([O-])=O.CC(O)C([O-])=O DYROSKSLMAPFBZ-UHFFFAOYSA-L 0.000 description 1
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- ZHOLKSYCHRKNCU-UHFFFAOYSA-H copper;silicon(4+);hexafluoride Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[Si+4].[Cu+2] ZHOLKSYCHRKNCU-UHFFFAOYSA-H 0.000 description 1
- FWBOFUGDKHMVPI-UHFFFAOYSA-K dicopper;2-oxidopropane-1,2,3-tricarboxylate Chemical compound [Cu+2].[Cu+2].[O-]C(=O)CC([O-])(C([O-])=O)CC([O-])=O FWBOFUGDKHMVPI-UHFFFAOYSA-K 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- ZUVOYUDQAUHLLG-OLXYHTOASA-L disilver;(2r,3r)-2,3-dihydroxybutanedioate Chemical compound [Ag+].[Ag+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O ZUVOYUDQAUHLLG-OLXYHTOASA-L 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000003673 groundwater Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000010413 mother solution Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- 229940071575 silver citrate Drugs 0.000 description 1
- 229940045105 silver iodide Drugs 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 description 1
- 229910000161 silver phosphate Inorganic materials 0.000 description 1
- 229940019931 silver phosphate Drugs 0.000 description 1
- 229910000367 silver sulfate Inorganic materials 0.000 description 1
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 description 1
- NEMJXQHXQWLYDM-JJKGCWMISA-M silver;(2r,3s,4r,5r)-2,3,4,5,6-pentahydroxyhexanoate Chemical compound [Ag+].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O NEMJXQHXQWLYDM-JJKGCWMISA-M 0.000 description 1
- LMEWRZSPCQHBOB-UHFFFAOYSA-M silver;2-hydroxypropanoate Chemical compound [Ag+].CC(O)C([O-])=O LMEWRZSPCQHBOB-UHFFFAOYSA-M 0.000 description 1
- FTNNQMMAOFBTNJ-UHFFFAOYSA-M silver;formate Chemical compound [Ag+].[O-]C=O FTNNQMMAOFBTNJ-UHFFFAOYSA-M 0.000 description 1
- TZMGLOFLKLBEFW-UHFFFAOYSA-M silver;sulfamate Chemical compound [Ag+].NS([O-])(=O)=O TZMGLOFLKLBEFW-UHFFFAOYSA-M 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- VPKAOUKDMHJLAY-UHFFFAOYSA-J tetrasilver;phosphonato phosphate Chemical compound [Ag+].[Ag+].[Ag+].[Ag+].[O-]P([O-])(=O)OP([O-])([O-])=O VPKAOUKDMHJLAY-UHFFFAOYSA-J 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YZJQPSAZKVXWEZ-UHFFFAOYSA-J tin(4+) tetraformate Chemical compound [Sn+4].[O-]C=O.[O-]C=O.[O-]C=O.[O-]C=O YZJQPSAZKVXWEZ-UHFFFAOYSA-J 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- QUBMWJKTLKIJNN-UHFFFAOYSA-B tin(4+);tetraphosphate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QUBMWJKTLKIJNN-UHFFFAOYSA-B 0.000 description 1
- AECLSPNOPRYXFI-UHFFFAOYSA-J tin(4+);tetrasulfamate Chemical compound [Sn+4].NS([O-])(=O)=O.NS([O-])(=O)=O.NS([O-])(=O)=O.NS([O-])(=O)=O AECLSPNOPRYXFI-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- YQMWDQQWGKVOSQ-UHFFFAOYSA-N trinitrooxystannyl nitrate Chemical compound [Sn+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YQMWDQQWGKVOSQ-UHFFFAOYSA-N 0.000 description 1
- PQGFRBOHUKOXQZ-FSCNPAMSSA-J tris[[(2R,3S,4R,5R)-2,3,4,5,6-pentahydroxyhexanoyl]oxy]stannyl (2R,3S,4R,5R)-2,3,4,5,6-pentahydroxyhexanoate Chemical compound [Sn+4].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O PQGFRBOHUKOXQZ-FSCNPAMSSA-J 0.000 description 1
- QUTYHQJYVDNJJA-UHFFFAOYSA-K trisilver;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Ag+].[Ag+].[Ag+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QUTYHQJYVDNJJA-UHFFFAOYSA-K 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009692 water atomization Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/065—Spherical particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
Description
(1)Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、純度が99.9%以上99.995%以下であり、α線量が0.0200cph/cm2以下であり、PbまたはBiのいずれかの含有量、あるいは、PbおよびBiの合計の含有量が1ppm以上であり、真球度が0.90以上であるNiボール。
UおよびThは放射性同位元素であり、ソフトエラーを抑制するにはこれらの含有量を抑える必要がある。UおよびThの含有量は、Niボールのα線量を0.0200cph/cm2以下とするため、各々5ppb以下にする必要がある。また、現在または将来の高密度実装でのソフトエラーを抑制する観点から、UおよびThの含有量は、好ましくは、各々2ppb以下である。
本発明に係るNiボールは純度が3N以上4N5以下である。つまり、本発明に係るNiボールは不純物元素の含有量が50ppm以上である。Niボールを構成するNiの純度がこの範囲であると、Niボールの真球度が高まるための十分な量の結晶核を溶融Ni中に確保することができる。真球度が高まる理由は以下のように詳述される。
本発明に係るNiボールのα線量は0.0200cph/cm2以下である。これは、電子部品の高密度実装においてソフトエラーが問題にならない程度のα線量である。本発明では、Niボールを製造するために通常行っている工程に加え再度加熱処理を施している。このため、Ni材にわずかに残存する210Poが揮発し、Ni材と比較してNiボールの方がより一層低いα線量を示す。α線量は、更なる高密度実装でのソフトエラーを抑制する観点から、好ましくは0.0020cph/cm2以下であり、より好ましくは0.0010cph/cm2以下である。
不純物元素としては、Sn、Sb、Bi、Zn、Fe、Al、As、Ag、In、Cd、Cu、Pb、Au、P、S、U、Thなどが考えられるが、本発明に係るNiボールは、不純物元素の中でも特にPbまたはBiのいずれかの含有量、あるいは、PbおよびBiの合計の含有量が1ppm以上不純物元素として含有することが好ましい。本発明では、α線量を低減する上でPbまたはBiのいずれかの含有量、あるいは、PbおよびBiの含有量を極限まで低減する必要がない。
これは以下の理由による。
本発明に係るNiボールの形状は、スタンドオフ高さを制御する観点から真球度は0.90以上であることが好ましい。Niボールの真球度が0.90未満であると、Niボールが不定形状になるため、バンプ形成時に高さが不均一なバンプが形成され、接合不良が発生する可能性が高まる。真球度は、より好ましくは0.94以上である。本発明において、真球度とは真球からのずれを表す。真球度は、例えば、最小二乗中心法(LSC法)、最小領域中心法(MZC法)、最大内接中心法(MIC法)、最小外接中心法(MCC法)など種々の方法で求められる。
本発明に係るNiボールの直径は1〜1000μmであることが好ましい。この範囲にあると、球状のNiボールを安定して製造でき、また、端子間が狭ピッチである場合の接続短絡を抑制することができる。ここで、例えば、本発明に係るNiボールがペーストに用いられるような場合、「Niボール」は「Niパウダ」と称されてもよい。「Niボール」が「Niパウダ」と称されるに用いるような場合、一般的に、Niボールの直径は1〜300μmである。
はんだめっき被膜の組成は、合金の場合、Snを主成分とする鉛フリーはんだ合金の合金組成であれば特に限定されない。また、はんだめっき被膜としては、Snめっき被膜であってもよい。例えば、Sn、Sn−Ag合金、Sn−Cu合金、Sn−Ag−Cu合金、Sn−In合金、およびこれらに所定の合金元素を添加したものが挙げられる。いずれもSnの含有量が40質量%以上である。添加する合金元素としては、例えばAg、Cu、In、Ni、Co、Sb、Ge、P、Feなどがある。これらの中でも、はんだめっき被膜の合金組成は、落下衝撃特性の観点から、好ましくはSn−3Ag−0.5Cu合金である。
前述したNiボールの項で説明したように、UおよびThは放射性元素であり、ソフトエラーを抑制するには、はんだめっき被覆においてもこれらの含有量を抑える必要がある。UおよびThの含有量は、はんだめっき被膜のα線量を0.0200cph/cm2以下とするため、各々5ppb以下にする必要がある。また、現在または将来の高密度実装でのソフトエラーを抑制する観点から、UおよびThの含有量は、好ましくは、各々2ppb以下である。
本発明に係るNi核ボールのα線量は、Niボールと同様に0.0200cph/cm2以下である。これは、電子部品の高密度実装においてソフトエラーが問題にならない程度のα線量である。本発明に係るNi核ボールのα線量は、Ni核ボールを構成するNiボールのα線量が、前述のように0.0200cph/cm2以下であることに加え、Ni核ボールを構成するはんだめっき被膜のα線量が0.0200cph/cm2以下であることにより達成される。
実施例
純度が3NのNiワイヤ(α線量:0.0034cph/cm2、U:0.7ppb、Th:0.5ppb)をるつぼの中に投入し、1000℃の温度条件で45分間予備加熱を行った。その後、吐出温度を1600℃、好ましくは1700℃として、ガスアトマイズ法により、液状の溶融Niをノズルから高速度で噴霧し、霧状の溶融Niを冷却してNiボールを造粒した。これにより平均粒径が50μmのNiボールを作製した。作製したNiボールの元素分析結果、α線量および真球度を表1に示す。以下に、α線量および真球度の測定方法を詳述する。
α線量の測定にはガスフロー比例計数器のα線測定装置を用いた。測定サンプルは300mm×300mmの平面浅底容器にNiボールを敷き詰めたものである。この測定サンプルをα線測定装置内に入れ、PR−10ガスフローにて24時間放置した後、α線量を測定した。なお、測定に使用したPR−10ガス(アルゴン90%−メタン10%)は、PR−10ガスをガスボンベに充填してから3週間以上経過したものである。3週間以上経過したボンベを使用したのは、ガスボンベに進入する大気中のラドンによりα線が発生しないように、JEDEC(Joint Electron Device Engineering Council)で定められたα線測定方法の指針に従ったためである。
真球度はCNC画像測定システムで測定された。装置は、ミツトヨ社製のウルトラクイックビジョン、ULTRA QV350−PROである。
純度が4N5以下のNiワイヤ(α線量:0.0026cph/cm2、U:<0.5ppb、Th:<0.5ppb)を用いたこと以外、実施例1と同様にNiボールを作製し、元素分析およびα線量を測定した。結果を表1に示す。また、実施例2で作製したNiボールのSEM写真を図2に示す。SEM写真の倍率は300倍である。
純度が4N5より高い5NのNi板(α線量:<0.0010cph/cm2、U:<0.5ppb、Th:<0.5ppb)を用いたこと以外、実施例1と同様にNiボールを作製し、元素分析およびα線量を測定した。結果を表1に示す。また、比較例1で作製したNiボールのSEM写真を図3に示す。SEM写真の倍率は300倍である。
参考までに、純度が3NのNiワイヤ(α線量:0.0034cph/cm2、U:0.8ppb、Th:0.5ppb)の造粒前の元素分析結果およびα線量を表1に示す。
実施例1で製造したNiボールについて、以下の条件でSnを主成分とするはんだめっき被膜を形成してNi核ボールを作製した。
Claims (14)
- Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、純度が99.9%以上99.995%以下であり、α線量が0.0200cph/cm2以下であり、PbまたはBiのいずれかの含有量、あるいは、PbおよびBiの合計の含有量が1ppm以上であり、真球度が0.90以上である
ことを特徴とするNiボール。 - α線量が0.0020cph/cm2以下である
ことを特徴とする請求項1に記載のNiボール。 - α線量が0.0010cph/cm2以下である
ことを特徴とする請求項1または2に記載のNiボール。 - 直径が1〜1000μmである
ことを特徴とする請求項1〜3のいずれか1項に記載のNiボール。 - 請求項1〜4のいずれか1項に記載のNiボールがはんだ中に分散している
ことを特徴とするフォームはんだ。 - 請求項1〜4のいずれか1項に記載のNiボールを含有している
ことを特徴とするはんだペースト。 - 請求項1〜4のいずれか1項に記載のNiボールと、該Niボールを被覆するはんだめっきとを備える
ことを特徴とするNi核ボール。 - α線量が0.0200cph/cm2以下である
ことを特徴とする請求項7に記載のNi核ボール。 - α線量が0.0020cph/cm2以下である
ことを特徴とする請求項7に記載のNi核ボール。 - α線量が0.0010cph/cm2以下である
ことを特徴とする請求項7に記載のNi核ボール。 - 請求項7〜10のいずれか1項に記載のNi核ボールがはんだ中に分散している
ことを特徴とするフォームはんだ。 - 請求項7〜10のいずれか1項に記載のNi核ボールを含有している
ことを特徴とするはんだペースト。 - 請求項1〜請求項4のいずれか1項に記載のNiボールを使用した
ことを特徴とするはんだ継手。 - 請求項7〜請求項10のいずれか1項に記載のNi核ボールを使用した
ことを特徴とするはんだ継手。
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PCT/JP2013/075288 WO2015040714A1 (ja) | 2013-09-19 | 2013-09-19 | Niボール、Ni核ボール、はんだ継手、フォームはんだ、はんだペースト |
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EP3103567A4 (en) * | 2014-02-04 | 2017-11-01 | Senju Metal Industry Co., Ltd | Method for producing metal ball, joining material, and metal ball |
JP6459293B2 (ja) * | 2014-08-18 | 2019-01-30 | 日立金属株式会社 | はんだ被覆ボールおよびその製造方法 |
JP6428409B2 (ja) * | 2015-03-18 | 2018-11-28 | 三菱マテリアル株式会社 | ハンダ粉末及びこの粉末を用いたハンダ用ペースト |
CN112584949A (zh) * | 2018-09-26 | 2021-03-30 | 松下知识产权经营株式会社 | 镍颗粒的制造方法、硫酸镍的制造方法和二次电池用正极活性物质的制造方法 |
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JP4570177B2 (ja) | 1998-03-11 | 2010-10-27 | 株式会社フジクラ | プリント配線基板とチップ部品との接続方法 |
JP2001044315A (ja) * | 1999-07-28 | 2001-02-16 | Hitachi Chem Co Ltd | はんだボール接続用端子とそのはんだボール接続用端子の形成方法及びそのはんだボール接続端子を有する半導体パッケージ用基板並びに半導体パッケージ用基板の製造方法 |
DE60130477T2 (de) | 2000-10-02 | 2008-01-03 | Nippon Mining & Metals Co., Ltd. | Hochreines Zirkonium oder Hafnium, diese beinhaltendes Sputtering Target und mit diesesm hergestellte dünnen Filme, Verfahren zur Herstellung von hochreinem Zirkonium oder Hafnium und Herstellungsverfahren für Pulver aus hochreinem Zirkonium oder Hafnium |
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JP2005161338A (ja) | 2003-12-01 | 2005-06-23 | Hitachi Metals Ltd | はんだシート |
JP2007115857A (ja) | 2005-10-20 | 2007-05-10 | Nippon Steel Chem Co Ltd | マイクロボール |
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CN105745043A (zh) | 2016-07-06 |
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TWI611859B (zh) | 2018-01-21 |
WO2015040714A1 (ja) | 2015-03-26 |
KR20160049019A (ko) | 2016-05-04 |
KR101645929B1 (ko) | 2016-08-04 |
CN105745043B (zh) | 2017-11-24 |
JP5510623B1 (ja) | 2014-06-04 |
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EP3047924B1 (en) | 2018-08-22 |
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