JPWO2013183706A1 - 光半導体装置 - Google Patents
光半導体装置 Download PDFInfo
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- JPWO2013183706A1 JPWO2013183706A1 JP2014520043A JP2014520043A JPWO2013183706A1 JP WO2013183706 A1 JPWO2013183706 A1 JP WO2013183706A1 JP 2014520043 A JP2014520043 A JP 2014520043A JP 2014520043 A JP2014520043 A JP 2014520043A JP WO2013183706 A1 JPWO2013183706 A1 JP WO2013183706A1
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- Prior art keywords
- plating layer
- semiconductor device
- peripheral surface
- optical semiconductor
- silver plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 50
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 239000004927 clay Substances 0.000 claims abstract description 102
- 238000007747 plating Methods 0.000 claims abstract description 78
- 238000007789 sealing Methods 0.000 claims abstract description 72
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052709 silver Inorganic materials 0.000 claims abstract description 71
- 239000004332 silver Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000002093 peripheral effect Effects 0.000 claims description 55
- 239000010408 film Substances 0.000 description 60
- 229920005989 resin Polymers 0.000 description 51
- 239000011347 resin Substances 0.000 description 51
- 239000003085 diluting agent Substances 0.000 description 18
- 239000002904 solvent Substances 0.000 description 9
- 238000005486 sulfidation Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 229910052901 montmorillonite Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 238000007865 diluting Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000012463 white pigment Substances 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000004383 yellowing Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004956 Amodel Substances 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- VNSBYDPZHCQWNB-UHFFFAOYSA-N calcium;aluminum;dioxido(oxo)silane;sodium;hydrate Chemical compound O.[Na].[Al].[Ca+2].[O-][Si]([O-])=O VNSBYDPZHCQWNB-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910000271 hectorite Inorganic materials 0.000 description 1
- KWLMIXQRALPRBC-UHFFFAOYSA-L hectorite Chemical compound [Li+].[OH-].[OH-].[Na+].[Mg+2].O1[Si]2([O-])O[Si]1([O-])O[Si]([O-])(O1)O[Si]1([O-])O2 KWLMIXQRALPRBC-UHFFFAOYSA-L 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910000275 saponite Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (6)
- 表面に銀めっき層が形成された基板と、
前記銀めっき層にボンディングされた発光ダイオードと、
前記発光ダイオードを取り囲む光反射部と、
前記光反射部に充填されて前記発光ダイオードを封止する透明封止部と、
前記銀めっき層を被覆する粘土膜と、
を有し、
前記透明封止部と前記光反射部とが接合されている、
光半導体装置。 - 前記光反射部が、前記発光ダイオードを取り囲むように前記基板から立ち上がって前記発光ダイオードを収容する内側空間を形成する内周面を備え、
前記粘土膜が、前記内周面の一部を被覆し、
前記透明封止部が、前記内周面の粘土膜で被覆されていない非被覆部と接合されている、
請求項1に記載の光半導体装置。 - 前記発光ダイオードは、青色光を発生する青色発光ダイオードである、
請求項2に記載の光半導体装置。 - 前記非被覆部の面積が、前記内周面の面積の1%以上である、
請求項2又は3に記載の光半導体装置。 - 前記非被覆部の面積が、前記内周面の面積の99%以下である、
請求項2〜4の何れか一項に記載の光半導体装置。 - 前記光反射部が、前記発光ダイオードを取り囲むように前記基板から立ち上がって前記発光ダイオードを収容する内側空間を形成する内周面と、前記内周面に隣接して前記内側空間の外側に位置する頂面と、を備え、
前記粘土膜が、前記内周面を被覆し、
前記透明封止部が、前記頂面と接合されている、
請求項1に記載の光半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014520043A JP6164215B2 (ja) | 2012-06-06 | 2013-06-06 | 光半導体装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012129028 | 2012-06-06 | ||
JP2012129028 | 2012-06-06 | ||
JP2014520043A JP6164215B2 (ja) | 2012-06-06 | 2013-06-06 | 光半導体装置 |
PCT/JP2013/065688 WO2013183706A1 (ja) | 2012-06-06 | 2013-06-06 | 光半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013183706A1 true JPWO2013183706A1 (ja) | 2016-02-01 |
JP6164215B2 JP6164215B2 (ja) | 2017-07-19 |
Family
ID=49712095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014520043A Expired - Fee Related JP6164215B2 (ja) | 2012-06-06 | 2013-06-06 | 光半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9525114B2 (ja) |
JP (1) | JP6164215B2 (ja) |
KR (1) | KR20150029641A (ja) |
CN (1) | CN104364922A (ja) |
TW (1) | TWI597865B (ja) |
WO (1) | WO2013183706A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017163058A (ja) * | 2016-03-10 | 2017-09-14 | パナソニックIpマネジメント株式会社 | Ledモジュール |
JP6817599B2 (ja) * | 2016-03-10 | 2021-01-20 | パナソニックIpマネジメント株式会社 | Ledモジュール |
US10672960B2 (en) | 2017-10-19 | 2020-06-02 | Lumileds Llc | Light emitting device package with a coating layer |
KR20200065074A (ko) * | 2017-10-19 | 2020-06-08 | 루미레즈 엘엘씨 | 발광 디바이스 패키지 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005023714A1 (ja) * | 2003-09-08 | 2005-03-17 | National Institute Of Advanced Industrial Science And Technology | 粘土膜 |
JP2008010591A (ja) * | 2006-06-28 | 2008-01-17 | Nichia Chem Ind Ltd | 発光装置およびその製造方法、パッケージ、発光素子実装用の基板 |
JP2008041706A (ja) * | 2006-08-01 | 2008-02-21 | Dainippon Printing Co Ltd | 発光装置および白色変換シート |
JP2009170825A (ja) * | 2008-01-19 | 2009-07-30 | Nichia Corp | 発光装置及びその製造方法 |
JP2009224538A (ja) * | 2008-03-17 | 2009-10-01 | Citizen Holdings Co Ltd | 半導体発光装置 |
WO2010074038A1 (ja) * | 2008-12-24 | 2010-07-01 | 旭硝子株式会社 | 発光素子モジュールおよびその製造方法 |
JP2010239043A (ja) * | 2009-03-31 | 2010-10-21 | Citizen Holdings Co Ltd | Led光源及びled光源の製造方法 |
JP2011009143A (ja) * | 2009-06-29 | 2011-01-13 | Sony Corp | 照明装置およびバックライト |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7157745B2 (en) * | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US8575632B2 (en) | 2005-08-04 | 2013-11-05 | Nichia Corporation | Light-emitting device, method for manufacturing same, molded body and sealing member |
US7967476B2 (en) | 2007-07-04 | 2011-06-28 | Nichia Corporation | Light emitting device including protective glass film |
US9112122B2 (en) * | 2010-04-13 | 2015-08-18 | Konica Minolta Advanced Layers, Inc. | Light-emitting device and method for manufacturing same |
KR20120131712A (ko) * | 2011-05-26 | 2012-12-05 | 엘지이노텍 주식회사 | 발광소자 패키지 |
CN104053818B (zh) * | 2012-01-16 | 2017-05-24 | 日立化成株式会社 | 银的表面处理剂及发光装置 |
-
2013
- 2013-06-06 WO PCT/JP2013/065688 patent/WO2013183706A1/ja active Application Filing
- 2013-06-06 US US14/405,946 patent/US9525114B2/en not_active Expired - Fee Related
- 2013-06-06 JP JP2014520043A patent/JP6164215B2/ja not_active Expired - Fee Related
- 2013-06-06 KR KR1020147034832A patent/KR20150029641A/ko not_active Application Discontinuation
- 2013-06-06 CN CN201380029857.XA patent/CN104364922A/zh active Pending
- 2013-06-06 TW TW102120140A patent/TWI597865B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005023714A1 (ja) * | 2003-09-08 | 2005-03-17 | National Institute Of Advanced Industrial Science And Technology | 粘土膜 |
JP2008010591A (ja) * | 2006-06-28 | 2008-01-17 | Nichia Chem Ind Ltd | 発光装置およびその製造方法、パッケージ、発光素子実装用の基板 |
JP2008041706A (ja) * | 2006-08-01 | 2008-02-21 | Dainippon Printing Co Ltd | 発光装置および白色変換シート |
JP2009170825A (ja) * | 2008-01-19 | 2009-07-30 | Nichia Corp | 発光装置及びその製造方法 |
JP2009224538A (ja) * | 2008-03-17 | 2009-10-01 | Citizen Holdings Co Ltd | 半導体発光装置 |
WO2010074038A1 (ja) * | 2008-12-24 | 2010-07-01 | 旭硝子株式会社 | 発光素子モジュールおよびその製造方法 |
JP2010239043A (ja) * | 2009-03-31 | 2010-10-21 | Citizen Holdings Co Ltd | Led光源及びled光源の製造方法 |
JP2011009143A (ja) * | 2009-06-29 | 2011-01-13 | Sony Corp | 照明装置およびバックライト |
Also Published As
Publication number | Publication date |
---|---|
US20150171293A1 (en) | 2015-06-18 |
JP6164215B2 (ja) | 2017-07-19 |
TWI597865B (zh) | 2017-09-01 |
US9525114B2 (en) | 2016-12-20 |
WO2013183706A1 (ja) | 2013-12-12 |
TW201405883A (zh) | 2014-02-01 |
CN104364922A (zh) | 2015-02-18 |
KR20150029641A (ko) | 2015-03-18 |
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