JPWO2013008382A1 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 96
- 230000002776 aggregation Effects 0.000 claims abstract description 40
- 238000004220 aggregation Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 213
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 17
- 230000007423 decrease Effects 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
本発明の第1の実施形態に係る窒化物半導体装置について、図1〜図3を参照しながら説明する。
以下、本発明の第2の実施形態に係る窒化物半導体装置ついて図4及び図5を参照しながら説明する。本実施形態において、第1の実施形態と同一の部材には同一の符号を付け、その説明を省略し、異なる部分についてのみ説明する。
2 バッファ層
3 窒化物半導体層
4 アンドープGaN層
5 アンドープAlGaN層
6 第1の絶縁膜(電極上絶縁膜)
6a (第1の絶縁膜の)開口部
7a ソース電極(第1の電極)
7b ドレイン電極(第2の電極)
8 ゲート電極
9 p型GaN層
10 ゲート電極垂直集約配線(第1のゲート電極集約配線)
11 ゲート電極平行集約配線
12a ソース電極配線(第1の電極配線)
12b ドレイン電極配線(第2の電極配線)
13a ソース電極集約配線(第1の電極集約配線)
13b ドレイン電極集約配線(第2の電極集約配線)
14 保護膜
15 層間絶縁膜
16 第2の絶縁膜(配線上絶縁膜)
16a(第2の絶縁膜の)開口部
17 下層密着層
18 導電層
19 上層金属層
20a ソース電極上層配線(第1の電極上層配線)
20b ドレイン電極上層配線(第2の電極上層配線)
21a ソース電極パッド(第1の電極パッド)
21b ドレイン電極パッド(第2の電極パッド)
22 ゲート電極パッド
23 裏面電極
37a S1電極(第1の電極)
37b S2電極(第2の電極)
38a G1電極(第1のゲート電極)
38b G2電極(第2のゲート電極)
40a G1電極垂直集約配線(第1のゲート電極集約配線)
40b G2電極垂直集約配線(第2のゲート電極集約配線)
41a G1電極平行集約配線
41b G2電極平行集約配線
42a S1電極配線(第1の電極配線)
42b S2電極配線(第2の電極配線)
43a S1電極集約配線(第1の電極集約配線)
43b S2電極集約配線(第2の電極集約配線)
50a S1電極上層配線(第1の電極上層配線)
50b S2電極上層配線(第2の電極上層配線)
51a S1電極パッド(第1の電極パッド)
51b S2電極パッド(第2の電極パッド)
52a G1電極パッド
52b G2電極パッド
Claims (12)
- 基板と、
前記基板の上に形成され、活性領域を有する窒化物半導体層と、
前記窒化物半導体層における前記活性領域の上に互いに平行に延びるように形成され、長手方向にそれぞれ分割された第1の電極配線層と、
前記窒化物半導体層の上に前記第1の電極配線層に沿って形成された第1のゲート電極と、
前記窒化物半導体層の上における前記第1の電極配線層が分割された領域に、前記第1のゲート電極の長手方向と垂直な方向に延びるように形成され、前記第1のゲート電極と電気的に接続する第1のゲート電極集約配線と、
前記第1のゲート電極集約配線の上に該第1のゲート電極集約配線と離間して形成され、前記第1の電極配線層と電気的に接続する第1の電極集約配線と、
前記第1の電極配線層及び第1の電極集約配線層の上に形成され、前記第1の電極集約配線を露出する開口部を有する配線上絶縁膜と、
前記配線上絶縁膜の上における前記第1の電極集約配線の上に形成され、前記第1の開口部を介して前記第1の電極集約配線と電気的に接続する第1の電極上層配線とを備えている窒化物半導体装置。 - 請求項1において、
前記窒化物半導体層における前記活性領域の上の前記第1の電極同士の間に該第1の電極に沿って形成され、長手方向にそれぞれ分割された第2の電極配線層と、
前記第1の電極配線層及び第2の電極配線層が分割された領域で且つ前記第1のゲート電極集約配線が形成されていない領域の上に形成され、前記第2の電極配線層と電気的に接続する第2の電極集約配線と、
前記配線上絶縁膜の上における前記第2の電極集約配線の上に形成された第2の電極上層配線とをさらに備え、
前記配線上絶縁膜の開口部は、前記第2の電極集約配線をも露出し、前記第2の電極集約配線と前記第2の電極上層配線とは前記配線上絶縁膜の開口部を介して電気的に接続されている窒化物半導体装置。 - 請求項1又は2において、
前記配線上絶縁膜の開口部は、前記第1の電極配線層をも露出し、
前記第1の電極上層配線は、前記配線上絶縁膜の開口部を介して前記第1の電極配線層と電気的に接続されている窒化物半導体装置。 - 請求項2又は3において、
前記配線上絶縁膜の開口部は、前記第2の電極配線層をも露出し、
前記第2の電極上層配線は、前記配線上絶縁膜の開口部を介して前記第2の電極配線層と電気的に接続されている窒化物半導体装置。 - 請求項1〜4のいずれか1項において、
前記第1の電極配線層は、前記窒化物半導体層の上に該窒化物半導体層と直接に接続するように形成された第1の電極と、前記第1の電極の上に形成された第1の電極配線とを含み、
前記窒化物半導体層の上には、前記第1のゲート電極及び第1のゲート電極集約配線を覆い、且つ、前記第1の電極を露出する開口部を有する電極上絶縁膜が形成され、
前記第1の電極配線は、前記電極上絶縁膜の開口部を介して前記第1の電極と電気的に接続している窒化物半導体装置。 - 請求項5において、
前記第2の電極配線層は、前記窒化物半導体層の上に該窒化物半導体層と直接に接続するように形成された第2の電極と、前記第2の電極の上に形成された第2の電極配線とを含み、
前記電極上絶縁膜の開口部は、前記第2の電極をも露出し、
前記第2の電極配線は、前記電極上絶縁膜の開口部を介して前記第2の電極と電気的に接続している窒化物半導体装置。 - 請求項1〜6のいずれか1項において、
前記第1のゲート電極集約配線の幅は、前記第1のゲート電極の幅よりも大きい窒化物半導体装置。 - 請求項5〜7のいずれか1項において、
前記第1の電極集約配線の幅は、前記第1の電極配線の幅よりも大きい窒化物半導体装置。 - 請求項6〜8のいずれか1項において、
前記第2の電極集約配線の幅は、前記第2の電極配線の幅よりも大きい窒化物半導体装置。 - 請求項2〜9のいずれか1項において、
前記配線上絶縁膜の上に前記第1の電極上層配線及び第2の電極上層配線のそれぞれと一体に形成され、前記活性領域の上に位置する第1の電極パッド及び第2の電極パッドをさらに備えている窒化物半導体装置。 - 請求項2〜10のいずれか1項において、
前記窒化物半導体層の上に前記第2の電極配線層に沿って形成された第2のゲート電極と、
前記窒化物半導体層の上における前記第1の電極配線層及び第2の電極配線層が分割された領域で且つ前記第1のゲート電極集約配線が形成されていない領域に、前記第2のゲート電極の長手方向と垂直な方向に延びるように形成され、前記第2のゲート電極と電気的に接続する第2のゲート電極集約配線とをさらに備えている窒化物半導体装置。 - 請求項11において、
前記第2のゲート電極集約配線の幅は、第2のゲート電極の幅よりも大きい窒化物半導体装置。
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JP6338832B2 (ja) * | 2013-07-31 | 2018-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9620424B2 (en) | 2013-11-12 | 2017-04-11 | Skyworks Solutions, Inc. | Linearity performance for radio-frequency switches |
US20220013415A1 (en) * | 2013-11-12 | 2022-01-13 | Skyworks Solutions, Inc. | Radio-frequency switching devices having improved voltage handling capability |
WO2017200544A1 (en) * | 2016-05-19 | 2017-11-23 | Alrawaili Sattam Humood | Electronic rotating chapel oratory |
JP6812764B2 (ja) * | 2016-11-29 | 2021-01-13 | 日亜化学工業株式会社 | 電界効果トランジスタ |
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WO2013008382A1 (ja) | 2013-01-17 |
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US8866231B2 (en) | 2014-10-21 |
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CN103597588A (zh) | 2014-02-19 |
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