JPWO2012147769A1 - 誘電体セラミックスおよびこれを備える誘電体フィルタ - Google Patents
誘電体セラミックスおよびこれを備える誘電体フィルタ Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 82
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 238000002441 X-ray diffraction Methods 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 8
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 7
- 150000002910 rare earth metals Chemical class 0.000 abstract 1
- 239000011701 zinc Substances 0.000 description 48
- 238000000034 method Methods 0.000 description 19
- 239000010936 titanium Substances 0.000 description 16
- 239000000843 powder Substances 0.000 description 12
- 238000010304 firing Methods 0.000 description 11
- 239000010955 niobium Substances 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 239000011575 calcium Substances 0.000 description 7
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 7
- 239000000292 calcium oxide Substances 0.000 description 7
- 239000011572 manganese Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 7
- 229910052573 porcelain Inorganic materials 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000001354 calcination Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
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Abstract
Description
2:金属ケース
3:入力端子
4:出力端子
5:誘電体セラミックス
Claims (9)
- 主成分の組成式を、αZrO2・βTiO2・γZnO・δNb2O5と表したとき、モル比α,β,γ,δが下記を満足する焼結体からなり、焼結体表面の少なくとも一部にZn濃度5%以上の部分が存在していることを特徴とする誘電体セラミックス。
0.3000≦α≦0.5500
0.3300≦β≦0.6000
0.0108≦γ≦0.0717
0.0193≦δ≦0.1283
α+β+γ+δ=1
0.5<γ/δ≦1 - 前記組成式のモル比α,β,γ,δが下記を満足することを特徴とする請求項1に記載の誘電体セラミックス。
0.3500≦α≦0.4000
0.4800≦β≦0.5300
0.0358≦γ≦0.0538
0.0642≦δ≦0.0963
α+β+γ+δ=1
0.5385≦γ/δ≦0.7647 - 前記焼結体表面におけるZn濃度5%以上の部分の面積占有率が0.1%以上5%以下であることを特徴とする請求項1または請求項2に記載の誘電体セラミックス。
- 前記主成分100質量%に対して、CaをCaO換算で0.01質量%を越え0.3質量%以下含むことを特徴とする請求項1乃至請求項3のいずれかに記載の誘電体セラミックス。
- Mo,CeまたはYのうち1種以上の酸化物を含み、前記主成分100質量%に対して、それぞれMoO3,CeO2,Y2O3に換算した値の合計で0.3質量%以下(0質量%を除く)含むことを特徴とする請求項1乃至請求項3のいずれかに記載の誘電体セラミックス。
- Si,Al,MnおよびCuのうち少なくとも1種の酸化物を含み、前記主成分100質量%に対して、それぞれSiO2,Al2O3,MnO2およびCuOに換算した値の合計で0.005質量%以上0.2質量%以下含むことを特徴とする請求項1乃至請求項5のいずれかに記載の誘電体セラミックス。
- 2θ=30.5°〜30.6°における(Zr0.4Ti0.6)O2のX線回折強度をI1、2θ=35.0°〜35.5°におけるZn2TiO4のX線回折強度をI2としたとき、I2/I1が0.1以上2.0以下であることを特徴とする請求項1乃至請求項6のいずれかに記載の誘電体セラミックス。
- TixNb1−xO2(0.04≦x≦0.2)の結晶相を含むことを特徴とする請求項1乃至請求項7のいずれかに記載の誘電体セラミックス。
効果:結晶相の存在によるεrの上昇 - 請求項1乃至請求項8のいずれかに記載の誘電体セラミックスと、該誘電体セラミックスと電磁界結合され、外部から電気信号が入力される入力端子と、前記誘電体セラミックスと電磁界結合されて前記誘電体セラミックスの共振周波数と対応した電気信号を選択的に出力する出力端子とを備えることを特徴とする誘電体フィルタ。
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