JPWO2012133617A1 - 樹脂組成物および半導体素子基板 - Google Patents

樹脂組成物および半導体素子基板 Download PDF

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Publication number
JPWO2012133617A1
JPWO2012133617A1 JP2013507710A JP2013507710A JPWO2012133617A1 JP WO2012133617 A1 JPWO2012133617 A1 JP WO2012133617A1 JP 2013507710 A JP2013507710 A JP 2013507710A JP 2013507710 A JP2013507710 A JP 2013507710A JP WO2012133617 A1 JPWO2012133617 A1 JP WO2012133617A1
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Japan
Prior art keywords
group
resin
acid
ene
compound
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2013507710A
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English (en)
Japanese (ja)
Inventor
田口　和典
和典 田口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zeon Corp
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Zeon Corp
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Publication date
Application filed by Zeon Corp filed Critical Zeon Corp
Publication of JPWO2012133617A1 publication Critical patent/JPWO2012133617A1/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/452—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
    • C08G77/455—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2013507710A 2011-03-30 2012-03-29 樹脂組成物および半導体素子基板 Pending JPWO2012133617A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011074673 2011-03-30
JP2011074673 2011-03-30
PCT/JP2012/058307 WO2012133617A1 (ja) 2011-03-30 2012-03-29 樹脂組成物および半導体素子基板

Publications (1)

Publication Number Publication Date
JPWO2012133617A1 true JPWO2012133617A1 (ja) 2014-07-28

Family

ID=46931319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013507710A Pending JPWO2012133617A1 (ja) 2011-03-30 2012-03-29 樹脂組成物および半導体素子基板

Country Status (5)

Country Link
JP (1) JPWO2012133617A1 (ko)
KR (1) KR20140007405A (ko)
CN (1) CN103443707A (ko)
TW (1) TWI458759B (ko)
WO (1) WO2012133617A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871425B2 (en) * 2012-02-09 2014-10-28 Az Electronic Materials (Luxembourg) S.A.R.L. Low dielectric photoimageable compositions and electronic devices made therefrom
KR102049820B1 (ko) * 2012-03-16 2020-01-22 제온 코포레이션 개환 메타세시스 중합체 수소화물의 제조 방법 및 수지 조성물
WO2014103516A1 (ja) * 2012-12-27 2014-07-03 日立化成株式会社 感光性樹脂組成物、感光性フィルム及びレジストパターンの形成方法
KR102377464B1 (ko) * 2014-03-20 2022-03-21 제온 코포레이션 감방사선 수지 조성물 및 전자 부품
TWI524150B (zh) * 2014-06-27 2016-03-01 奇美實業股份有限公司 感光性樹脂組成物、保護膜及具有保護膜之元件
TWI524141B (zh) * 2014-06-27 2016-03-01 奇美實業股份有限公司 感光性樹脂組成物、保護膜及具有保護膜之元件
KR102329586B1 (ko) * 2014-11-21 2021-11-22 롬엔드하스전자재료코리아유한회사 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막
TWI534131B (zh) 2014-11-27 2016-05-21 財團法人工業技術研究院 氫化４，４’－二胺基二苯甲烷的觸媒與方法
JP6947027B2 (ja) * 2015-02-19 2021-10-13 日本ゼオン株式会社 樹脂組成物、樹脂膜、及び電子部品
WO2018021049A1 (ja) * 2016-07-28 2018-02-01 日産化学工業株式会社 樹脂組成物
KR101815935B1 (ko) * 2016-09-29 2018-01-08 염한균 고 내열성 면상 발열체 조성물 및 그 제조방법
KR20190056088A (ko) * 2017-11-16 2019-05-24 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
KR102293308B1 (ko) * 2021-01-15 2021-08-23 한국전기연구원 유기 실록산 바인더 기반 광감성 솔더레지스트 및 그 제조방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123323A (ko) * 1973-03-16 1974-11-26
JP2000338664A (ja) * 1999-05-27 2000-12-08 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターンの製造法及び電子部品
JP2004051876A (ja) * 2002-07-23 2004-02-19 Jsr Corp 樹脂組成物および保護膜
JP2007199606A (ja) * 2006-01-30 2007-08-09 Fujifilm Corp 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
JP2008242438A (ja) * 2007-02-28 2008-10-09 Chisso Corp ポジ型感光性樹脂組成物
JP2009204805A (ja) * 2008-02-27 2009-09-10 Nippon Zeon Co Ltd 感光性樹脂組成物、積層体及びその製造方法並びに電子部品
WO2009133843A1 (ja) * 2008-04-28 2009-11-05 日本ゼオン株式会社 感放射線樹脂組成物、積層体及びその製造方法ならびに半導体デバイス
JP2011068731A (ja) * 2009-09-24 2011-04-07 Fujifilm Corp 近赤外吸収性色素を含有する硬化性組成物、インク用組成物および近赤外線吸収フィルタの製造方法

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* Cited by examiner, † Cited by third party
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US4036644A (en) * 1973-03-16 1977-07-19 International Business Machines Corporation Photoresist process and photosensitive O-quinone diazide article with aliphatic carboxylic acid as adhesion promotor
DE60041630D1 (de) * 1999-07-15 2009-04-09 Arakawa Chem Ind Enthaltend glycidylethergruppe partielles alkoxysilan-kondensat, silanmodifiziertes harz, zusammensetzung daraus und verfahren zu deren herstellung
KR100954044B1 (ko) * 2002-05-14 2010-04-20 제이에스알 가부시끼가이샤 수지 조성물 및 보호막
US20080177002A1 (en) * 2005-01-05 2008-07-24 Jsr Corporation Thermoplastic Resin Composition, Optical Film, And Process For Producing Film
KR20090125044A (ko) * 2007-02-28 2009-12-03 제온 코포레이션 액티브 매트릭스 기판 및 그 제조 방법, 그리고 평면 표시 장치

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123323A (ko) * 1973-03-16 1974-11-26
JP2000338664A (ja) * 1999-05-27 2000-12-08 Hitachi Chemical Dupont Microsystems Ltd 感光性樹脂組成物、パターンの製造法及び電子部品
JP2004051876A (ja) * 2002-07-23 2004-02-19 Jsr Corp 樹脂組成物および保護膜
JP2007199606A (ja) * 2006-01-30 2007-08-09 Fujifilm Corp 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
JP2008242438A (ja) * 2007-02-28 2008-10-09 Chisso Corp ポジ型感光性樹脂組成物
JP2009204805A (ja) * 2008-02-27 2009-09-10 Nippon Zeon Co Ltd 感光性樹脂組成物、積層体及びその製造方法並びに電子部品
WO2009133843A1 (ja) * 2008-04-28 2009-11-05 日本ゼオン株式会社 感放射線樹脂組成物、積層体及びその製造方法ならびに半導体デバイス
JP2011068731A (ja) * 2009-09-24 2011-04-07 Fujifilm Corp 近赤外吸収性色素を含有する硬化性組成物、インク用組成物および近赤外線吸収フィルタの製造方法

Also Published As

Publication number Publication date
WO2012133617A1 (ja) 2012-10-04
KR20140007405A (ko) 2014-01-17
CN103443707A (zh) 2013-12-11
TW201307439A (zh) 2013-02-16
TWI458759B (zh) 2014-11-01

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