JPWO2012108439A1 - 基板中継装置,基板中継方法,基板処理装置 - Google Patents
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- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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Abstract
Description
(基板処理装置の構成例)
先ず,本発明の実施形態にかかる基板中継装置を適用可能な基板処理装置の構成例について図面を参照しながら説明する。図1は本実施形態にかかる基板処理装置の概略構成を示す横断面図である。基板処理装置100は,基板例えば半導体ウエハ(以下,単に「ウエハ」ともいう。)Wに対して所定の処理(例えばエッチング処理,成膜処理,アッシング処理,熱処理など)を施すための複数の真空処理ユニット(プロセスシップ)110と,この真空処理ユニット110に対してウエハWを搬出入させるローダ室130とを備える。
(基板中継装置の構成例)
このような基板中継装置200の具体的構成例について図面を参照しながら説明する。図2は基板中継装置200の概略構成を示す縦断面図であり,図3はその外観斜視図である。本実施形態にかかる基板中継装置200は,図2に示すように,各搬送装置140A,140Bの側壁に沿って形成された開口144を囲む略箱状の筐体202を備え,その内部にゲートバルブ201が設けられる。搬送装置140A,140B及び基板中継装置200は、搬送装置140Aの開口144及び搬送装置140Bの開口144により連通し、基板中継装置200を介してウエハWを搬送装置140Aから搬送装置140B、又は搬送装置140Bから搬送装置140Aに搬送できるように形成されている。
(基板中継装置の他の構成例)
ここで,基板中継装置200の他の構成例として支持ピン250を昇降自在にした場合について説明する。図5は基板中継装置200の他の構成例を示す縦断面図であり,図6はその外観斜視図である。図5,図6に示す基板中継装置200は,支持ピン250を昇降駆動する支持ピン昇降機構260を備える。支持ピン昇降機構260は,支持ピン250を支持するベース262と,ベース262を昇降させるアクチュエータ264とを備える。
(基板処理装置の他の構成例)
ここで,本実施形態にかかる基板中継装置200を適用可能な基板処理装置の他の構成例について図面を参照しながら説明する。図11は,基板処理装置の他の構成例を示す横断面図である。ここでは,図11に示すように,3つの真空処理ユニット110A,110B,110Cをローダ室130に並列に接続した基板処理装置101に,基板中継装置200を適用した場合を例に挙げる。
110A,110B,110C 真空処理ユニット
112A,112B,112C ゲートバルブ
114A,114B,114C ゲートバルブ
116A,116B,116C ゲートバルブ
120A,120B,120C 処理装置
122A,122B,122C 処理容器
124A,124B,124C 載置台
130 ローダ室
132A,132B,132C カセット台
134A,132B,134C カセット容器
136A,136B,136C ロードポート
137 オリエンタ
138 回転載置台
139 光学センサ
140A,140B,140C 搬送装置
144 開口
150A,150B ロードロック室
152A,152B 受渡台
160,170A,170B,170C 搬送アーム機構
162,172A,172B,172C 基台
180 制御部
200 基板中継装置
201 ゲートバルブ
202 筐体
204 仕切壁
206 基板搬出入口
210 弁体
220 昇降軸
230 昇降案内フレーム
232 弁体駆動部
240 ベローズ
250 支持ピン
260 支持ピン昇降機構
262 ベース
264 アクチュエータ
266 貫通孔
268 シール部材
270 板状部材
280 板状部材
282 昇降軸
284 貫通孔
W ウエハ
Claims (9)
- 基板に所定の処理を施す処理装置に前記基板を搬出入する複数の搬送装置と、該複数の搬送装置のうち隣設する前記搬送装置間の少なくともいずれかに設けられた、前記基板を中継するための基板中継装置と、を備えた基板処理装置であって,
前記基板中継装置は、
前記各搬送装置の側壁に沿って形成された開口を囲むように設けられ,前記各搬送装置の側壁に挟まれる幅方向のサイズを少なくとも前記基板サイズよりも小さく形成した筐体と,
前記筐体内にて前記隣接する搬送装置の側壁に沿って前記開口に対して開閉自在に設けられたゲートバルブと,
前記ゲートバルブの両側に設けられ,該ゲートバルブを跨って前記基板を支持する少なくとも3本の支持ピンと,
を有することを特徴とする基板処理装置。 - 前記ゲートバルブは,前記筐体内を前記隣接する搬送装置の一方側と他方側を仕切る仕切壁に形成された基板搬出入口を開閉する昇降自在な弁体を備え,
前記支持ピンは,前記仕切壁の両側に設けたことを特徴とする請求項1に記載の基板処理装置。 - 前記支持ピンを昇降自在に設けるとともに,これを昇降駆動させる支持ピン昇降機構を設け,
前記支持ピン昇降機構は,前記支持ピンを支持するベースと,このベースを昇降させるアクチュエータと,を備えたことを特徴とする請求項2に記載の基板処理装置。 - 前記各搬送装置内にそれぞれ搬送アーム機構を設け,
前記搬送アーム機構同士で前記ゲートバルブの開成時に前記基板の受け渡しをする際には,一方の前記搬送アーム機構によって前記基板を前記ゲートバルブを跨いだ状態で前記支持ピンに支持させて,他方の前記搬送アーム機構によって前記支持ピンから前記基板を受け取ることを特徴とする請求項1に記載の基板処理装置。 - 前記ゲートバルブは,前記搬送装置を両方稼働している際には開成し,前記搬送装置のいずれかをメンテナンスする際には閉成することを特徴とする請求項1に記載の基板処理装置。
- 前記各搬送装置にそれぞれゲートバルブを介して接続され,前記各搬送装置との間で前記基板を搬出入するロードロック室と,これらロードロック室にゲートバルブを介して接続され,前記各ロードロック室との間で基板を搬出入するローダ室を備え,
前記ロードロック室のうちのいずれかをメンテナンスする際には,そのロードロック室と前記搬送装置との間のゲートバルブを閉じ,
そのロードロック室から搬入して処理すべき基板については,他のロードロック室から搬入して前記各搬送装置間で前記基板中継装置を介してその基板が処理されるべき処理装置に搬入することによって,前記基板の処理を続行することを特徴とする請求項1に記載の基板処理装置。 - 基板に所定の処理を施す処理装置に前記基板を搬出入する複数の搬送装置のうち隣設する前記搬送装置間の少なくともいずれかに設けられた、前記基板を中継するための基板中継装置であって,
前記各搬送装置の側壁に沿って形成された開口を囲むように設けられ,前記各搬送装置の側壁に挟まれる幅方向のサイズを少なくとも前記基板サイズよりも小さく形成した筐体と,
前記筐体内にて前記隣接する搬送装置の側壁に沿って前記開口に対して開閉自在に設けられたゲートバルブと,
前記ゲートバルブの両側に設けられ,該ゲートバルブを跨って前記基板を支持する少なくとも3本の支持ピンと,
を備えたことを特徴とする基板中継装置。 - 基板に所定の処理を施す処理装置に前記基板を搬出入する複数の搬送装置のうち隣設する前記搬送装置間の少なくともいずれかに設けられた基板中継装置を用いた基板中継方法であって,
前記基板中継装置は,前記各搬送装置の側壁に沿って形成された開口を囲むように設けられ,前記各搬送装置の側壁に挟まれる幅方向のサイズを少なくとも前記基板サイズよりも小さく形成した筐体と,前記筐体内にて前記隣接する搬送装置の側壁に沿って前記開口に対して開閉自在に設けられたゲートバルブと,前記ゲートバルブの両側に設けられた少なくとも3本の支持ピンと,を備え,
前記各搬送装置内にそれぞれ設けられた搬送アーム機構同士で前記基板の受け渡しをする際には,一方の前記搬送アーム機構によって搬送された前記基板を、開成した前記ゲートバルブを跨いだ状態で前記支持ピンに支持させて,他方の前記搬送アーム機構によって前記支持ピンから前記基板を受け取ることを特徴とする基板中継方法。 - 複数の前記支持ピンを先端又は末端で繋げる板状部材を更に備えることを特徴とする請求項1に記載の基板処理装置。
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JP2000150618A (ja) * | 1998-11-17 | 2000-05-30 | Tokyo Electron Ltd | 真空処理システム |
TW442891B (en) * | 1998-11-17 | 2001-06-23 | Tokyo Electron Ltd | Vacuum processing system |
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JP5000555B2 (ja) * | 2008-03-12 | 2012-08-15 | 東京エレクトロン株式会社 | ゲートバルブおよび半導体製造装置 |
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TWI533392B (zh) | 2016-05-11 |
KR20140041419A (ko) | 2014-04-04 |
US9269599B2 (en) | 2016-02-23 |
TW201246436A (en) | 2012-11-16 |
US20130309047A1 (en) | 2013-11-21 |
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KR101685752B1 (ko) | 2016-12-12 |
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