JPWO2012043472A1 - 導電性粒子、異方性導電材料及び接続構造体 - Google Patents
導電性粒子、異方性導電材料及び接続構造体 Download PDFInfo
- Publication number
- JPWO2012043472A1 JPWO2012043472A1 JP2011541004A JP2011541004A JPWO2012043472A1 JP WO2012043472 A1 JPWO2012043472 A1 JP WO2012043472A1 JP 2011541004 A JP2011541004 A JP 2011541004A JP 2011541004 A JP2011541004 A JP 2011541004A JP WO2012043472 A1 JPWO2012043472 A1 JP WO2012043472A1
- Authority
- JP
- Japan
- Prior art keywords
- copper
- tin
- layer
- conductive
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/02—Ingredients treated with inorganic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/05611—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/0568—Molybdenum [Mo] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05684—Tungsten [W] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
- Combinations Of Printed Boards (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
銅−錫層3全体における銅の含有量は、好ましくは30重量%以上、より好ましくは35重量%以上、更に好ましくは40重量%以上、好ましくは70重量%以下である。銅−錫層3全体における錫の含有量は、好ましくは30重量%以上、好ましくは70重量%以下、より好ましくは65重量%以下、更に好ましくは60重量%以下である。
上記樹脂粒子を形成するための樹脂として、種々の有機物が好適に用いられる。上記樹脂粒子を形成するための樹脂として、例えば、ポリエチレン、ポリプロピレン、ポリスチレン、ポリ塩化ビニル、ポリ塩化ビニリデン、ポリプロピレン、ポリイソブチレン、ポリブタジエン等のポリオレフィン;ポリメチルメタクリレート、ポリメチルアクリレート等のアクリル樹脂;ポリアルキレンテレフタレート、ポリスルホン、ポリカーボネート、ポリアミド、フェノールホルムアルデヒド樹脂、メラミンホルムアルデヒド樹脂、ベンゾグアナミンホルムアルデヒド樹脂、尿素ホルムアルデヒド樹脂等が用いられる。例えば、エチレン性不飽和基を有する種々の重合性単量体を1種もしくは2種以上重合させることにより、導電材料に適した任意の圧縮時の物性を有する樹脂粒子を設計及び合成することができる。
上記パラジウム層の平均厚みの好ましい下限は10nm、より好ましい上限は400nmである。パラジウム層の平均厚みが10nm以上であると、導電性粒子の導電性をより一層高めることができる。
本発明に係る異方性導電材料は、上述した導電性粒子と、バインダー樹脂とを含む。
上記バインダー樹脂は特に限定されない。上記バインダー樹脂として、一般的には絶縁性の樹脂が用いられる。上記バインダー樹脂としては、例えば、ビニル樹脂、熱可塑性樹脂、硬化性樹脂、熱可塑性ブロック共重合体及びエラストマー等が挙げられる。上記バインダー樹脂は1種のみが用いられてもよく、2種以上が併用されてもよい。
本発明に係る導電性粒子又は該導電性粒子とバインダー樹脂とを含む異方性導電材料を用いて、接続対象部材を接続することにより、接続構造体を得ることができる。
(1)樹脂粒子形成工程
ポリビニルアルコール(日本合成化学工業社製「GH−20」)を3重量%含む水溶液800重量部に、ジビニルベンゼン70重量部と、トリメチロールプロパントリメタクリレート30重量部と、過酸化ベンゾイル2重量部とを加え、攪拌し、混合した。窒素雰囲気下にて撹拌しながら80℃まで加熱し、15時間反応を行い、樹脂粒子を得た。
得られた樹脂粒子A10gをエッチング処理した後、水洗した。次に、樹脂粒子に硫酸パラジウムを加え、パラジウムイオンを樹脂粒子に吸着させた。
塩化錫5gとイオン交換水1000mLとを含む溶液を調製し、得られた銅めっき粒子15gを混合して水性懸濁液を得た。この水性懸濁液に、チオ尿素30g及び酒石酸80gを入れ、めっき液を得た。このめっき液を浴温60℃にし、20分間反応させた。更に、このめっき液中に、塩化錫20g、クエン酸40g及び水酸化ナトリウム30gをさらに入れ、浴温60℃で20分間反応させることにより、錫層(厚み約72nm)が銅層の表面上に設けられた粒子を得た。
得られた錫層が銅層の表面上に設けられた粒子を、220℃で20時間加熱した。加熱後に、銅と錫層とが合金化していた。このようにして、樹脂粒子の表面上に銅−錫層(厚み約100nm)が設けられており、かつ該銅−錫層が銅と錫との合金を含む導電性粒子を得た。得られた導電性粒子において、銅−錫層全体に含まれている銅と錫との含有量を評価した結果、銅の含有量は40重量%であり、錫の含有量は60重量%であった。
無電解銅めっき工程において、銅層の厚みを約50nmにしたこと、並びに無電解錫めっき工程において、錫層の厚みを約60nmに変更したこと以外は実施例1と同様にして、樹脂粒子の表面上に銅−錫層(厚み約100nm)が設けられており、かつ該銅−錫層が銅と錫との合金を含む導電性粒子を得た。得られた導電性粒子において、銅−錫層全体に含まれている銅と錫との含有量を評価した結果、銅の含有量は50重量%であり、錫の含有量は50重量%であった。
無電解銅めっき工程において、銅層の厚みを約60nmにしたこと、並びに無電解錫めっき工程において、錫層の厚みを約48nmに変更したこと以外は実施例1と同様にして、樹脂粒子の表面上に銅−錫層(厚み約100nm)が設けられており、かつ該銅−錫層が銅と錫との合金を含む導電性粒子を得た。得られた導電性粒子において、銅−錫層全体に含まれている銅と錫との含有量を評価した結果、銅の含有量は60重量%であり、錫の含有量は40重量%であった。
(1)芯物質付着工程
実施例1で得られた樹脂粒子A10gをエッチング処理した後、水洗した。次に、樹脂粒子に硫酸パラジウムを加え、パラジウムイオンを樹脂粒子に吸着させた。
芯物質が付着された樹脂粒子を用いたこと以外は実施例1と同様にして、無電解銅めっき工程、無電解錫めっき工程及び合金化工程を行い、樹脂粒子の表面上に銅−錫層が設けられており、かつ該銅−錫層が銅と錫との合金を含む導電性粒子を得た。得られた導電性粒子は、銅−錫層の表面に突起を有していた。得られた導電性粒子において、銅−錫層全体に含まれている銅と錫との含有量を評価した結果、銅の含有量は40重量%であり、錫の含有量は60重量%であった。なお、銅及び錫の含有量を求める際には、芯物質として含まれているニッケルは除外されている。
樹脂粒子Aを、1,4−ブタンジオールジアクリレートと、テトラメチロールメタンテトラアクリレートとの共重合樹脂粒子(1,4−ブタンジオールジアクリレート:テトラメチロールメタンテトラアクリレート=95重量%:5重量%、以下樹脂粒子Bと記載することがある)に変更したこと以外は、実施例4と同様にして導電性粒子を得た。得られた導電性粒子は、銅−錫層の表面に突起を有していた。
(1)絶縁性樹脂粒子の作製
4ツ口セパラブルカバー、攪拌翼、三方コック、冷却管及び温度プローブが取り付けられた1000mLのセパラブルフラスコに、メタクリル酸メチル100mmolと、N,N,N−トリメチル−N−2−メタクリロイルオキシエチルアンモニウムクロライド1mmolと、2,2’−アゾビス(2−アミジノプロパン)二塩酸塩1mmolとを含むモノマー組成物を固形分率が5重量%となるようにイオン交換水に添加した後、200rpmで攪拌し、窒素雰囲気下70℃で24時間重合を行った。反応終了後、凍結乾燥して、表面にアンモニウム基を有し、平均粒子径220nm及びCV値10%の絶縁性樹脂粒子を得た。
樹脂粒子Aを、樹脂粒子Bに変更したこと以外は、実施例1と同様にして導電性粒子を得た。
実施例5で得られた導電性粒子を実施例1で得られた導電性粒子に変更したこと以外は、実施例6と同様にして絶縁性樹脂粒子が付着された導電性粒子を得た。
実施例5で得られた導電性粒子を実施例4で得られた導電性粒子に変更したこと以外は、実施例6と同様にして絶縁性樹脂粒子が付着された導電性粒子を得た。
実施例5で得られた導電性粒子を実施例7で得られた導電性粒子に変更したこと以外は、実施例6と同様にして絶縁性樹脂粒子が付着された導電性粒子を得た。
実施例1で得られた導電性粒子を用意した。この導電性粒子を用いて、以下の(1)及び(2)の工程を実施した。
得られた銅めっき粒子10gを、超音波処理機により、イオン交換水500mLに分散させ、粒子懸濁液を得た。
得られた導電性粒子1gを蒸留水1000mL(比抵抗18MΩ)に分散させ、撹拌機付オートクレーブに入れて0.1MPaの加圧下、121℃で10時間攪拌洗浄した。その後、ろ別し、乾燥した。
実施例1で得られた樹脂粒子Aを用意した。また、銅粉(粒子径3.0〜7.0μm)と錫粉(粒子径3.0〜7.0μm)を用意した。
実施例1で使用した樹脂粒子Aを用意した。また、銅錫合金粉(銅の含有量40重量%、錫の含有量60重量%、粒子径3.0〜7.0μm)を用意した。
実施例1で得られた樹脂粒子Aを用意した。この樹脂粒子A10gをエッチング処理した後、水洗した。次に、樹脂粒子に硫酸パラジウムを加え、パラジウムイオンを樹脂粒子に吸着させた。
実施例1の無電解錫めっき工程後に得られた錫層(厚み約72nm)が銅層(厚み約40nm)の表面上に設けられた粒子を、導電性粒子とした。比較例2では、合金化工程を行わなかった。
無電解銅めっき工程において、銅層の厚みを約80nmにしたこと、並びに無電解錫めっき工程において、錫層の厚みを約20nmに変更したこと以外は実施例1と同様にして、樹脂粒子の表面上に銅−錫層(厚み100nm)が設けられており、かつ該銅−錫層が銅と錫との合金を含む導電性粒子を得た。得られた導電性粒子において、銅−錫層全体に含まれている銅と錫との含有量を評価した結果、銅の含有量は80重量%であり、錫の含有量は20重量%であった。
無電解銅めっき工程において、銅層の厚みを約14nmにしたこと、並びに無電解錫めっき工程において、錫層の厚みを約96nmに変更したこと以外は実施例1と同様にして、樹脂粒子の表面上に銅−錫層(厚み約100nm)が設けられており、かつ該銅−錫層が銅と錫との合金を含む導電性粒子を得た。得られた導電性粒子において、銅−錫層全体に含まれている銅と錫との含有量を評価した結果、銅の含有量は15重量%であり、錫の含有量は85重量%であった。
無電解銅めっき工程において、銅層の厚みを約30nmにしたこと、並びに無電解錫めっき工程において、錫層の厚みを約84nmに変更したこと以外は実施例1と同様にして、樹脂粒子の表面上に銅−錫層(厚み約100nm)が設けられており、かつ該銅−錫層が銅と錫との合金を含む導電性粒子を得た。得られた導電性粒子において、銅−錫層全体に含まれている銅と錫との含有量を評価した結果、銅の含有量は30重量%であり、錫の含有量は70重量%であった。
(1)導電層の割れ
L/Sが100μm/100μmの銅電極が形成された2枚の基板を用意した。また、導電性粒子10重量部と、バインダー樹脂としてのエポキシ樹脂(三井化学社製「ストラクトボンドXN−5A」)85重量部と、イミダゾール型硬化剤5重量部とを含む異方性導電ペーストを用意した。
○:導電層に大きな割れがなく、樹脂粒子が露出していない
△:導電層に大きな割れがあり、樹脂粒子がわずかに露出している
×:導電層に大きな割れがあり、樹脂粒子が大きく露出している
上記(1)の評価で得られた100個の接続構造体の対向する電極間の接続抵抗を四端子法により測定し、電極間が導通されているか否かを評価し、導通信頼性を下記の基準で判定した。
○:100個の接続構造体の全てが導通されている
△:100個の接続構造体の内の導通されなかった数が1個又は2個
×:100個の接続構造体の内の導通されなかった数が3個以上
得られた導電性粒子における銅−錫層のビッカース硬度を、ビッカース硬度計(島津製作所社製「DUH−W201」)を用いて測定した。ビッカース硬度を下記の基準で判定した。
A:ビッカース硬度が500を超える
B:ビッカース硬度が100以上、500以下
C:ビッカース硬度が100未満
アルミパンに導電性粒子0.2〜0.5mgを入れ、ティー・エー・インスツルメンツ製「DSC2920」を用いて、昇温速度10℃/分の条件で走査し、Heat−Flow曲線を得た。この曲線において融解と見られるピークの頂点が示す温度値を融点とした。
ガラス製三角フラスコにて、導電性粒子0.5gと王水(35%塩酸溶液15mL、70%硝酸5mL)20mLとを混合し、70℃の温水バスで15分間、加温しかつ放置した。ウォターバスからフラスコを取り出した後、フラスコ中の液温が40℃以下ならように自然冷却させた。冷却後に、金属イオンと樹脂粒子とを含む酸性溶液を、ガラス漏斗及びろ紙(アドバンテック製濾紙、No.5C)を用いてろ過した。固液分離を行い、金属イオンを含む酸性溶液を100mL取り出した後、1mLをマイクロピペットで分取し、純水にて100倍に希釈して、希釈液を得た。得られた希釈液を用いて、ICP(誘導結合プラズマ、堀場製作所製「ULTIMA2」)で計測し、得られた金属イオン濃度から導電層の金属の重量及び各金属の分量を計算した。
結果を下記の表1に示す。下記の表1において、「−」は評価していないことを示す。
2…基材粒子
2a…表面
3…銅−錫層
3a…表面
11…導電性粒子
11a…表面
12…銅−錫層
12a…表面
13…芯物質
14…突起
15…絶縁性粒子
21…接続構造体
22…第1の接続対象部材
22a…上面
22b…電極
23…第2の接続対象部材
23a…下面
23b…電極
24…接続部
51…導電性粒子
52…銅層
52a…表面
53…錫層
61…導電性粒子
62…第2の導電層
71…導電性粒子
72…銅−錫層
Claims (8)
- 基材粒子と、該基材粒子の表面上に設けられた銅と錫とを含む銅−錫層とを備え、
前記銅−錫層が銅と錫との合金を含み、
前記銅−錫層全体における前記銅の含有量が20重量%を超え、75重量%以下であり、かつ錫の含有量が25重量%以上、80重量%未満である、導電性粒子。 - 前記銅−錫層の融点が550℃以上である、請求項1に記載の導電性粒子。
- 前記銅−錫層全体における銅の含有量が40重量%以上、60重量%以下であり、かつ錫の含有量が40重量%以上、60重量%以下である、請求項1又は2に記載の導電性粒子。
- 表面に突起を有する、請求項1〜3のいずれか1項に記載の導電性粒子。
- 前記銅−錫層の表面上に配置された絶縁性物質を備える、請求項1〜4のいずれか1項に記載の導電性粒子。
- 前記絶縁性物質が絶縁性粒子である、請求項5に記載の導電性粒子。
- 請求項1〜6のいずれか1項に記載の導電性粒子と、バインダー樹脂とを含む、異方性導電材料。
- 第1の接続対象部材と、第2の接続対象部材と、該第1,第2の接続対象部材を接続している接続部とを備え、
前記接続部が、請求項1〜6のいずれか1項に記載の導電性粒子により形成されているか、又は該導電性粒子とバインダー樹脂とを含む異方性導電材料により形成されている、接続構造体。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011541004A JP5054232B2 (ja) | 2010-09-30 | 2011-09-26 | 導電性粒子、異方性導電材料及び接続構造体 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010222871 | 2010-09-30 | ||
JP2010222871 | 2010-09-30 | ||
PCT/JP2011/071882 WO2012043472A1 (ja) | 2010-09-30 | 2011-09-26 | 導電性粒子、異方性導電材料及び接続構造体 |
JP2011541004A JP5054232B2 (ja) | 2010-09-30 | 2011-09-26 | 導電性粒子、異方性導電材料及び接続構造体 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011288560A Division JP2012094532A (ja) | 2010-09-30 | 2011-12-28 | 導電性粒子、異方性導電材料及び接続構造体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5054232B2 JP5054232B2 (ja) | 2012-10-24 |
JPWO2012043472A1 true JPWO2012043472A1 (ja) | 2014-02-06 |
Family
ID=45892916
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011541004A Active JP5054232B2 (ja) | 2010-09-30 | 2011-09-26 | 導電性粒子、異方性導電材料及び接続構造体 |
JP2011288560A Abandoned JP2012094532A (ja) | 2010-09-30 | 2011-12-28 | 導電性粒子、異方性導電材料及び接続構造体 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011288560A Abandoned JP2012094532A (ja) | 2010-09-30 | 2011-12-28 | 導電性粒子、異方性導電材料及び接続構造体 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP5054232B2 (ja) |
KR (1) | KR101815336B1 (ja) |
CN (1) | CN103124999B (ja) |
TW (1) | TWI556260B (ja) |
WO (1) | WO2012043472A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104221223B (zh) * | 2012-06-25 | 2017-07-04 | 株式会社村田制作所 | 各向异性导电片材以及使用其的电极接合方法 |
WO2014104017A1 (ja) * | 2012-12-28 | 2014-07-03 | 積水化学工業株式会社 | 有機無機ハイブリッド粒子、導電性粒子、導電材料及び接続構造体 |
JP6397742B2 (ja) * | 2013-12-03 | 2018-09-26 | 積水化学工業株式会社 | 導電性粒子、導電材料及び接続構造体 |
JPWO2015105120A1 (ja) * | 2014-01-08 | 2017-03-23 | 積水化学工業株式会社 | バックコンタクト方式の太陽電池モジュール用導電性粒子、導電材料及び太陽電池モジュール |
US20160012931A1 (en) * | 2014-07-11 | 2016-01-14 | Tyco Electronics Corporation | Conductive Particle |
TWI740807B (zh) * | 2014-10-29 | 2021-10-01 | 日商迪睿合股份有限公司 | 導電材料、連接構造體、及連接構造體之製造方法 |
CN111951996B (zh) * | 2015-01-28 | 2023-06-30 | 三菱综合材料株式会社 | 导电性粘结剂、导电性薄膜、导电性间隔物及它们的制法 |
JP6777405B2 (ja) * | 2015-03-03 | 2020-10-28 | 積水化学工業株式会社 | 導電性粒子、導電性粒子の製造方法、導電材料及び接続構造体 |
CN107250308B (zh) * | 2015-05-20 | 2019-10-25 | 积水化学工业株式会社 | 导电性粘合材料及带导电性基材的导电性粘合材料 |
CN104972110A (zh) * | 2015-06-27 | 2015-10-14 | 铜陵铜基粉体科技有限公司 | 一种可防电磁干扰的球形铜粉及其制作方法 |
CN106433558A (zh) * | 2016-09-26 | 2017-02-22 | 麦科勒(滁州)新材料科技有限公司 | 一种用于电子封装的粘合剂及其制备方法 |
JP6962307B2 (ja) * | 2018-12-10 | 2021-11-05 | 昭和電工マテリアルズ株式会社 | 異方導電性接着剤用の導電性粒子 |
CN113950778A (zh) * | 2019-06-13 | 2022-01-18 | 积水化学工业株式会社 | 导电性粒子、导电材料和连接结构体 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100437838C (zh) * | 2003-07-07 | 2008-11-26 | 积水化学工业株式会社 | 包覆导电性粒子、各向异性导电材料以及导电连接结构体 |
JP4563110B2 (ja) * | 2004-08-20 | 2010-10-13 | 積水化学工業株式会社 | 導電性微粒子の製造方法 |
JP4860163B2 (ja) * | 2005-02-15 | 2012-01-25 | 積水化学工業株式会社 | 導電性微粒子の製造方法 |
JP2006225692A (ja) * | 2005-02-15 | 2006-08-31 | Mitsui Mining & Smelting Co Ltd | スズコート銅粉及び当該スズコート銅粉を用いた複合導電性ペースト |
JP2007242307A (ja) * | 2006-03-06 | 2007-09-20 | Sekisui Chem Co Ltd | 導電性微粒子及び異方性導電材料 |
CN2904213Y (zh) * | 2006-04-27 | 2007-05-23 | 番禺得意精密电子工业有限公司 | 导电材料 |
CN100469492C (zh) * | 2006-09-15 | 2009-03-18 | 重庆华浩冶炼有限公司 | 铁青铜复合粉的制备方法 |
JP4363480B2 (ja) * | 2006-11-15 | 2009-11-11 | 日立金属株式会社 | 希土類系永久磁石 |
CN101088669B (zh) * | 2007-07-18 | 2010-06-30 | 重庆扬子粉末冶金有限责任公司 | 青铜包铁复合粉及其制造方法 |
JP4746116B2 (ja) | 2008-10-14 | 2011-08-10 | 日本化学工業株式会社 | 導電性粉体及びそれを含む導電性材料並びに導電性粒子の製造方法 |
-
2011
- 2011-09-26 JP JP2011541004A patent/JP5054232B2/ja active Active
- 2011-09-26 KR KR1020137007590A patent/KR101815336B1/ko active IP Right Grant
- 2011-09-26 CN CN201180046428.4A patent/CN103124999B/zh active Active
- 2011-09-26 WO PCT/JP2011/071882 patent/WO2012043472A1/ja active Application Filing
- 2011-09-29 TW TW100135338A patent/TWI556260B/zh active
- 2011-12-28 JP JP2011288560A patent/JP2012094532A/ja not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20130122730A (ko) | 2013-11-08 |
TW201222558A (en) | 2012-06-01 |
CN103124999A (zh) | 2013-05-29 |
KR101815336B1 (ko) | 2018-01-04 |
WO2012043472A1 (ja) | 2012-04-05 |
TWI556260B (zh) | 2016-11-01 |
CN103124999B (zh) | 2015-06-10 |
JP5054232B2 (ja) | 2012-10-24 |
JP2012094532A (ja) | 2012-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5054232B2 (ja) | 導電性粒子、異方性導電材料及び接続構造体 | |
JP6470810B2 (ja) | 絶縁性粒子付き導電性粒子、導電材料及び接続構造体 | |
JP5114607B2 (ja) | 導電性粒子、導電性粒子の製造方法、異方性導電材料及び接続構造体 | |
JP6009933B2 (ja) | 導電性粒子、導電材料及び接続構造体 | |
JP6165626B2 (ja) | 導電性粒子、導電材料及び接続構造体 | |
JP5636118B2 (ja) | 導電性粒子、導電材料及び接続構造体 | |
JP6084868B2 (ja) | 導電性粒子、導電材料及び接続構造体 | |
JP6276351B2 (ja) | 導電性粒子、導電材料及び接続構造体 | |
JP6165625B2 (ja) | 導電性粒子、導電材料及び接続構造体 | |
JP6431411B2 (ja) | 絶縁性粒子付き導電性粒子、導電材料及び接続構造体 | |
JP6151990B2 (ja) | 絶縁性粒子付き導電性粒子、導電材料及び接続構造体 | |
JP2016154139A (ja) | 導電性粒子粉体、導電性粒子粉体の製造方法、導電材料及び接続構造体 | |
JP2014130809A (ja) | 導電性粒子、導電材料及び接続構造体 | |
JP6577723B2 (ja) | 絶縁性粒子付き導電性粒子、導電材料及び接続構造体 | |
JP7132274B2 (ja) | 導電性粒子、導電材料及び接続構造体 | |
JP7235611B2 (ja) | 導電材料及び接続構造体 | |
JP6066734B2 (ja) | 導電性粒子、導電材料及び接続構造体 | |
JP2020095815A (ja) | 導電フィルム及び接続構造体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120703 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120726 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5054232 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150803 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150803 Year of fee payment: 3 |