JPWO2012035759A1 - バックライト装置、およびそのバックライト装置を用いた液晶表示装置、およびそれらに用いる発光ダイオード - Google Patents
バックライト装置、およびそのバックライト装置を用いた液晶表示装置、およびそれらに用いる発光ダイオード Download PDFInfo
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- JPWO2012035759A1 JPWO2012035759A1 JP2012508274A JP2012508274A JPWO2012035759A1 JP WO2012035759 A1 JPWO2012035759 A1 JP WO2012035759A1 JP 2012508274 A JP2012508274 A JP 2012508274A JP 2012508274 A JP2012508274 A JP 2012508274A JP WO2012035759 A1 JPWO2012035759 A1 JP WO2012035759A1
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 58
- 238000009792 diffusion process Methods 0.000 claims abstract description 110
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- 238000006243 chemical reaction Methods 0.000 claims description 49
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 42
- 238000002834 transmittance Methods 0.000 claims description 10
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- 230000003287 optical effect Effects 0.000 description 22
- 238000001228 spectrum Methods 0.000 description 16
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- 239000000395 magnesium oxide Substances 0.000 description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 12
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- 238000005253 cladding Methods 0.000 description 10
- 238000000295 emission spectrum Methods 0.000 description 10
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- 238000002156 mixing Methods 0.000 description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
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- 239000011347 resin Substances 0.000 description 4
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- 229910052594 sapphire Inorganic materials 0.000 description 4
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- 235000012239 silicon dioxide Nutrition 0.000 description 4
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- 239000004408 titanium dioxide Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Planar Illumination Modules (AREA)
- Liquid Crystal (AREA)
- Led Device Packages (AREA)
- General Engineering & Computer Science (AREA)
Abstract
Description
2 LED
3 反射板
4 拡散シート
5,25 波長変換シート
6 輝度上昇シート
7 液晶パネル
8 LEDチップ
9 LEDパッケージ
10 樹脂
11 基板
12 n型コンタクト層
13 n型クラッド層
14 発光層
15 p型クラッド層
16 p型コンタクト層
17 ミラー層
17a〜17g 高屈折率層
17h〜17m 低屈折率層
18,21,22 反射層
19 n型電極
20 p型電極
21a 金属膜
23 拡散層
2 LED
3 反射板
4 拡散シート
5,25 波長変換シート
6 輝度上昇シート
7 液晶パネル
8 LEDチップ
9 LEDパッケージ
10 樹脂
11 基板
12 n型コンタクト層
13 n型クラッド層
14 発光層
15 p型クラッド層
16 p型コンタクト層
17 ミラー層
17a〜17g 高屈折率層
17h〜17m 低屈折率層
18,21,22 反射層
19 n型電極
20 p型電極
21a 金属膜
23 拡散層
Claims (19)
- 特定の色の光を発光する発光手段を備え、前記発光手段は、透明な基板上に設けられ特定の波長の光を発光する発光層と、前記発光層に対して光の出射側に形成されかつ前記発光層から発光される光を反射する機能を有する第1の反射層と、前記第1の反射層とで前記発光層を挟むように前記基板側に設けた第2の反射層とを備えた発光ダイオードであって、前記第1の反射層と前記第2の反射層との間に、前記発光層から発光される光を拡散させる拡散層を配置したことを特徴とするバックライト装置。
- 前記発光手段からの光のうちの一部の光を透過するとともに、前記透過した光と混色することで白色の光となる特定の色の光に変換する波長変換手段とを備えたことを特徴とする請求項1に記載のバックライト装置。
- 前記発光ダイオードの拡散層は、前記第1の反射層または第2の反射層と、前記発光層との間に配置したことを特徴とする請求項1に記載のバックライト装置。
- 前記発光ダイオードの拡散層は、第2の反射層に前記発光層から発光される光を拡散させる拡散機能を設けることにより構成したものであることを特徴とする請求項1に記載のバックライト装置。
- 前記発光ダイオードの第1の反射層は、出射角が65度以上に透過率のピークが存在するように構成したことを特徴とする請求項1に記載のバックライト装置。
- 前記発光ダイオードの第1の反射層は、誘電体多層膜で構成したことを特徴とする請求項1に記載のバックライト装置。
- 前記誘電体多層膜は、屈折率の異なる第1の誘電体および第2の誘電体から構成され、それぞれの光学膜厚は発光層からの光の第1の誘電体および第2の誘電体の中での波長の1/4近傍であることを特徴とする請求項5に記載のバックライト装置。
- 前記発光手段は、発光主波長が430nm〜480nmの青色の光を発光する青色の発光ダイオードであり、前記波長変換手段は、前記青色の発光ダイオードによって励起されかつ青色の光と混色することで白色の光となる特定色の光を発光する蛍光体膜を有するものである請求項2に記載のバックライト装置。
- 前記発光手段は、発光主波長が350nm〜400nmの紫外の光を発光する発光ダイオードであり、前記波長変換手段は、前記紫外の発光ダイオードによって励起されかつ赤色、青色、緑色の光を発光する蛍光体膜を有するものである請求項2に記載のバックライト装置。
- 前記波長変換手段は、光度の極大値を有する角度近傍において厚みが厚くなるように構成した請求項2に記載のバックライト装置。
- 特定の色の光を発光する発光手段を備えたバックライト装置と、前記バックライト装置からの出射光を背面側から入射し画像を表示する液晶パネルとを備えた液晶表示装置であって、前記発光手段は、透明な基板上に設けられ特定の波長の光を発光する発光層と、前記発光層に対して光の出射側に形成されかつ前記発光層から発光される光を反射する機能を有する第1の反射層と、前記第1の反射層とで前記発光層を挟むように前記基板側に設けた第2の反射層とを備えた発光ダイオードであって、前記第1の反射層と前記第2の反射層との間に、前記発光層から発光される光を拡散させる拡散層を配置したことを特徴とする液晶表示装置。
- 前記バックライト装置は、前記発光手段から発光される光のうち一部の光を透過するとともに、前記透過した光と混色することで白色の光となる特定の色の光に変換する波長変換手段を備えたことを特徴とする請求項11に記載の液晶表示装置。
- 前記発光ダイオードの拡散層は、前記第1の反射層または第2の反射層と、前記発光層との間に配置したことを特徴とする請求項11に記載の液晶表示装置。
- 前記発光ダイオードの拡散層は、第2の反射層に前記発光層から発光される光を拡散させる拡散機能を設けることにより構成したものであることを特徴とする請求項11に記載の液晶表示装置。
- 透明な基板上に設けられ特定の波長の光を発光する発光層と、前記発光層に対して光の出射側に形成されかつ前記発光層から発光される光を反射する機能を有する第1の反射層と、前記第1の反射層とで前記発光層を挟むように前記基板側に設けた第2の反射層とを備えた発光ダイオードであって、前記第1の反射層と前記第2の反射層との間に、前記発光層から発光される光を拡散させる拡散層を配置したことを特徴とする発光ダイオード。
- 前記拡散層は、前記第1の反射層または第2の反射層と、前記発光層との間に配置したことを特徴とする請求項15に記載の発光ダイオード。
- 前記拡散層は、第2の反射層に前記発光層から発光される光を拡散させる拡散機能を設けることにより構成したものであることを特徴とする請求項15に記載の発光ダイオード。
- 前記拡散層は、第2の反射層の表面に光を拡散させるとともに反射させる凹凸構造を設けて構成したことを特徴とする請求項15に記載の発光ダイオード。
- 前記第1の反射層は、出射角が65度以上に透過率のピークが存在するように構成したことを特徴とする請求項15に記載の発光ダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010205108 | 2010-09-14 | ||
JP2010205108 | 2010-09-14 | ||
PCT/JP2011/005157 WO2012035759A1 (ja) | 2010-09-14 | 2011-09-14 | バックライト装置、およびそのバックライト装置を用いた液晶表示装置、およびそれらに用いる発光ダイオード |
Publications (2)
Publication Number | Publication Date |
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JPWO2012035759A1 true JPWO2012035759A1 (ja) | 2014-01-20 |
JP5617916B2 JP5617916B2 (ja) | 2014-11-05 |
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JP2012508274A Active JP5617916B2 (ja) | 2010-09-14 | 2011-09-14 | バックライト装置、およびそのバックライト装置を用いた液晶表示装置、およびそれらに用いる発光ダイオード |
Country Status (5)
Country | Link |
---|---|
US (1) | US8665397B2 (ja) |
JP (1) | JP5617916B2 (ja) |
KR (1) | KR101373422B1 (ja) |
CN (1) | CN102640309B (ja) |
WO (1) | WO2012035759A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101384052B1 (ko) * | 2010-09-14 | 2014-04-09 | 파나소닉 주식회사 | 백라이트 장치, 및 그 백라이트 장치를 이용한 액정 표시 장치, 및 그들에 이용하는 발광 다이오드 |
KR101861997B1 (ko) * | 2011-10-31 | 2018-05-29 | 엘지이노텍 주식회사 | 발광소자 및 발광소자 제조방법 |
JP6273124B2 (ja) * | 2013-11-08 | 2018-01-31 | シチズン電子株式会社 | Led照明装置 |
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