JPWO2011108510A1 - フォトニック結晶レーザ - Google Patents
フォトニック結晶レーザ Download PDFInfo
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- JPWO2011108510A1 JPWO2011108510A1 JP2012503170A JP2012503170A JPWO2011108510A1 JP WO2011108510 A1 JPWO2011108510 A1 JP WO2011108510A1 JP 2012503170 A JP2012503170 A JP 2012503170A JP 2012503170 A JP2012503170 A JP 2012503170A JP WO2011108510 A1 JPWO2011108510 A1 JP WO2011108510A1
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 140
- 239000000463 material Substances 0.000 claims abstract description 33
- 230000002093 peripheral effect Effects 0.000 claims description 74
- 230000003287 optical effect Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 230000010287 polarization Effects 0.000 description 8
- 238000001069 Raman spectroscopy Methods 0.000 description 5
- 238000000635 electron micrograph Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
- H01S2301/203—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian with at least one hole in the intensity distribution, e.g. annular or doughnut mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0267—Integrated focusing lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
a) 活性層と、
b) 前記活性層の一方の側に設けられた板状の母材内に、同一形状であって前記母材とは屈折率が異なる多数の異屈折率領域がリング状に、該リングの周方向に周期的に並び、各異屈折率領域が、該異屈折率領域の中心を通って該リングの径方向に延びる軸に関して非対称な形状を有するリング状フォトニック結晶と、
c) 前記活性層及び前記リング状フォトニック結晶を挟むように設けられた第1電極及び第2電極と、
d) 前記第2電極に設けられた、前記リング状フォトニック結晶で生成されるレーザ光を透過可能な窓と、
を備えることを特徴とする。
母材よりも異屈折率領域の方が誘電率が高い場合には、実効的な誘電率の大小関係が上記のものとは逆になり、それによりレーザ光の断面における光の強度の大小関係も逆になる。
11…活性層
12、52、62…フォトニック結晶層
121…母材
122、522、622…空孔(異屈折率領域)
123、523、623…リング状フォトニック結晶
1241…第1溝
1242…第2溝
129…径方向軸
13…下部電極層
131、131A…下部電極(第1電極)
132…第1絶縁性膜
14、14B…上部電極層
141…上部電極(第2電極)
142…第2絶縁性膜
143…窓
151…pクラッド層
152…nクラッド層
21…レーザビーム
31…電流通過部
32…絶縁膜
41…リング状レンズ
622A、622A1、622A2…主空孔(主異屈折率領域)
622B、622B1、622B2…副空孔(副異屈折率領域)
Claims (10)
- a) 活性層と、
b) 前記活性層の一方の側に設けられた板状の母材内に、同一形状であって前記母材とは屈折率が異なる多数の異屈折率領域がリング状に、該リングの周方向に周期的に並び、各異屈折率領域が、該異屈折率領域の中心を通って該リングの径方向に延びる軸に関して非対称な形状を有するリング状フォトニック結晶と、
c) 前記活性層及び前記リング状フォトニック結晶を挟むように設けられた第1電極及び第2電極と、
d) 前記第2電極に設けられた、前記リング状フォトニック結晶で生成されるレーザ光を透過可能な窓と、
を備えることを特徴とするフォトニック結晶レーザ。 - 前記第1電極が前記リング状フォトニック結晶に重なる径及び幅を有するリング状電極であることを特徴とする請求項1に記載のフォトニック結晶レーザ。
- 前記リング状電極と前記リング状フォトニック結晶の間に、該リング状電極と同形状の電流通過部と、該電流通過部の周囲を覆う絶縁部を有する電流狭窄部を備えることを特徴とする請求項2に記載のフォトニック結晶レーザ。
- 前記リング状フォトニック結晶の外周側及び内周側にリング状の溝を備えることを特徴とする請求項1〜3のいずれかに記載のフォトニック結晶レーザ。
- 前記窓に、前記リング状フォトニック結晶側から前記第2電極側に向かって凸であるリング状レンズを備えることを特徴とする請求項1〜4のいずれかに記載のフォトニック結晶レーザ。
- 前記リング状フォトニック結晶の外周側における前記異屈折率領域の幅である外周幅が、該リング状フォトニック結晶の内周側における該異屈折率領域の幅である内周幅と異なることを特徴とする請求項1〜5のいずれかに記載のフォトニック結晶レーザ。
- 前記外周幅が前記内周幅よりも大きく且つ(r2 2/r1 2)倍未満(ここでr1は前記リング状フォトニック結晶の内径、r2は該リング状フォトニック結晶の外径)であることを特徴とする請求項6に記載のフォトニック結晶レーザ。
- 前記外周幅が前記内周幅の(r2/r1)倍であることを特徴とする請求項7に記載のフォトニック結晶レーザ。
- 前記異屈折率領域が、主異屈折率領域と、該主異屈折率領域から前記リングの径方向に所定の距離だけ離れて配置され、前記母材とは屈折率が異なり且つ該主異屈折率領域とは形状、大きさ及び屈折率のうち少なくとも1つが異なる副異屈折率領域から成ることを特徴とする請求項1〜8のいずれかに記載のフォトニック結晶レーザ。
- 前記主異屈折率領域と前記副異屈折率領域の間の距離が、前記異屈折率領域の周期の1/4であることを特徴とする請求項9に記載のフォトニック結晶レーザ。
Priority Applications (1)
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JP2012503170A JP5709178B2 (ja) | 2010-03-01 | 2011-03-01 | フォトニック結晶レーザ |
Applications Claiming Priority (4)
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JP2010044255 | 2010-03-01 | ||
JP2010044255 | 2010-03-01 | ||
JP2012503170A JP5709178B2 (ja) | 2010-03-01 | 2011-03-01 | フォトニック結晶レーザ |
PCT/JP2011/054566 WO2011108510A1 (ja) | 2010-03-01 | 2011-03-01 | フォトニック結晶レーザ |
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JPWO2011108510A1 true JPWO2011108510A1 (ja) | 2013-06-27 |
JP5709178B2 JP5709178B2 (ja) | 2015-04-30 |
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US (1) | US9048623B2 (ja) |
EP (1) | EP2544320A4 (ja) |
JP (1) | JP5709178B2 (ja) |
KR (1) | KR101771273B1 (ja) |
WO (1) | WO2011108510A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6333804B2 (ja) | 2013-03-07 | 2018-05-30 | 浜松ホトニクス株式会社 | レーザ素子及びレーザ装置 |
JP6276750B2 (ja) * | 2013-03-07 | 2018-02-07 | 浜松ホトニクス株式会社 | レーザ装置 |
JP6808336B2 (ja) * | 2016-03-15 | 2021-01-06 | 株式会社東芝 | 半導体レーザ装置 |
JP6182230B1 (ja) * | 2016-03-15 | 2017-08-16 | 株式会社東芝 | 面発光量子カスケードレーザ |
DE102016014939A1 (de) * | 2016-12-14 | 2018-06-14 | Forschungsverbund Berlin E.V. | Laservorrichtung, basierend auf einem photonischen Kristall mit säulen- oder wandförmigen Halbleiterelementen, und Verfahren zu deren Betrieb und Herstellung |
WO2018159606A1 (ja) | 2017-02-28 | 2018-09-07 | 国立大学法人京都大学 | フォトニック結晶レーザ |
US11143860B1 (en) * | 2019-04-29 | 2021-10-12 | United States Of America As Represented By The Secretary Of The Air Force | Photonic crystal-based optical steering |
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2011
- 2011-03-01 WO PCT/JP2011/054566 patent/WO2011108510A1/ja active Application Filing
- 2011-03-01 US US13/581,743 patent/US9048623B2/en active Active
- 2011-03-01 EP EP11750620.4A patent/EP2544320A4/en not_active Withdrawn
- 2011-03-01 KR KR1020127024318A patent/KR101771273B1/ko active IP Right Grant
- 2011-03-01 JP JP2012503170A patent/JP5709178B2/ja active Active
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Publication number | Publication date |
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EP2544320A1 (en) | 2013-01-09 |
US9048623B2 (en) | 2015-06-02 |
WO2011108510A1 (ja) | 2011-09-09 |
US20130003768A1 (en) | 2013-01-03 |
KR20130002998A (ko) | 2013-01-08 |
KR101771273B1 (ko) | 2017-08-24 |
JP5709178B2 (ja) | 2015-04-30 |
EP2544320A4 (en) | 2017-11-29 |
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