JPWO2011052463A1 - プラズマcvd装置、および、シリコン薄膜の製造方法 - Google Patents
プラズマcvd装置、および、シリコン薄膜の製造方法 Download PDFInfo
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Abstract
Description
(b)該真空容器内を減圧に維持するための排気設備、
(c)前記真空容器内に設けられた放電電極板、
(d)前記放電電極板に間隔をおいて対向して設けられ、薄膜形成用の基板を支持する接地電極板、
(e)前記放電電極板に、高周波電力を印加する高周波電源、および、
(f)前記真空容器内に薄膜形成用の原料ガスを供給する原料ガス供給設備が備えられたプラズマCVD装置において、
(g)前記放電電極板中に設けられ、一端が前記ガス供給設備に結合され、他端が前記放電電極板の一面の複数の箇所において開口する複数のガス導入孔と該複数のガス導入孔が開口する面からその反対側の面に貫通して前記放電電極板に設けられた複数のガス排気孔、
(h)前記複数のガス排気孔から排気されるガスを前記真空容器の外部へと排気するガス排気設備、
(i)前記放電電極板と前記接地電極板との間において、それぞれに対し間隔をおいて設けられたアースカバー板、および、
(j)該アースカバー板を貫通して、該アースカバー板の前記複数のガス導入孔に対応する位置に設けられた複数の第2のガス導入孔と、前記アースカバー板の前記複数のガス排気孔に対応する位置に設けられた複数の第2のガス排気孔を有するプラズマCVD装置。
図1乃至図4に、本発明のプラズマCVD装置の第1の実施態様の一例が示される。プラズマCVD装置1は、真空容器2を有する。真空容器2は、側板2a、側板2aの上面の開口を塞ぐ上板2bと、側壁2aの下面の開口を塞ぐ下板2cから形成されている。真空容器2は、その内部に、上板2bの下面に取り付けられた内部側板2dを有する。内部側板2dの内側の空間には、下面が開放された凹部2eを有するガス排気キャップ2fが設けられ、ガス排気キャップ2fの上面の一部(好ましくは中央部)は、真空容器2の外部に導出され、ガス排気導管(ガス排気設備)2gを形成している。
SimH2m+1+SiH4 → SimH2m+2+SiH3 (式1)
SiH2+SiH4 → Si2H6 (式2)
SiH3+SiH4 → SiH4+SiH3 (式3)
式1は、ガスの排気方向への流れに逆らい基板12の方向へ拡散した高次シランラジカルは、基板12の方向への拡散中に、親分子であるSiH4と反応し不活性な高次シランになることにより、成膜には関与せずに排気されることを示している。式2は、SiH2ラジカルは拡散しながら高次シランへ成長していく過程で親分子であるSiH4と反応し不活性になることにより、成膜には関与せず排気されることを示している。一方、式3は、親分子との反応により変化しないSiH3ラジカルが基板12へ到達し、選択的に薄膜の成膜に寄与することにより、高品質な薄膜が得られることを示している。
図5に、本発明のプラズマCVD装置の第2の実施態様の一例が示される。図5に示されるプラズマCVD装置41は、図1に示されるプラズマCVD装置1において、アースカバー板8と接地電極板10との間に、電位を一定に保つ電源を備えた電位制御板9が設けられたものである。
2 真空容器
2a 側板
2b 上板
2c 下板
2d 内部側板
2e 凹部
2f ガス排気キャップ
2g ガス排気導管
2h 電気絶縁体
2i 電気絶縁体
2j 導体
2k 排気口
3 放電電極板
3a 原料ガス供給孔
5 原料ガス供給管
8 アースカバー板
9 電位制御板
10 接地電極板
10a 電気で絶縁体
10b 導体
11 基板加熱機構
12 基板
13 マッチングボックス
14 高周波電源
15 電源
17 多数のガス排気孔
18 多数のガス導入孔
19 多数の第2のガス排気孔
20 多数の第2のガス導入孔
21 加熱機構
22 多数の第3のガス排気孔
23 多数の第3のガス導入孔
41 プラズマCVD装置
61 プラズマCVD装置
62 真空容器
62a 排気口
63 放電電極板
63a 凹部
65 原料ガス供給管
66 シャワープレート
66a 多数のガス導入孔
71 プラズマCVD装置
610 接地電極板
610a 絶縁体
610c 導体
611 加熱機構
612 基板
613 マッチングボックス
614 高周波電源
715 直流可変電源
716 メッシュ電極板
Claims (10)
- (a)真空容器、
(b)該真空容器内を減圧に維持するための排気設備、
(c)前記真空容器内に設けられた放電電極板、
(d)前記放電電極板に間隔をおいて対向して設けられ、薄膜形成用の基板を支持する接地電極板、
(e)前記放電電極板に、高周波電力を印加する高周波電源、および、
(f)前記真空容器内に薄膜形成用の原料ガスを供給する原料ガス供給設備が備えられたプラズマCVD装置において、
(g)前記放電電極板中に設けられ、一端が前記ガス供給設備に結合され、他端が前記放電電極板の一面の複数の箇所において開口する複数のガス導入孔と該複数のガス導入孔が開口する面からその反対側の面に貫通して前記放電電極板に設けられた複数のガス排気孔、
(h)前記複数のガス排気孔から排気されるガスを前記真空容器の外部へと排気するガス排気設備、
(i)前記放電電極板と前記接地電極板との間において、それぞれに対し間隔をおいて設けられたアースカバー板、および、
(j)該アースカバー板を貫通して、該アースカバー板の前記複数のガス導入孔に対応する位置に設けられた複数の第2のガス導入孔と、前記アースカバー板の前記複数のガス排気孔に対応する位置に設けられた複数の第2のガス排気孔を有するプラズマCVD装置。 - 前記ガス排気孔の孔径が、2mm乃至100mmである請求項1に記載のプラズマCVD装置。
- 前記放電電極板と前記アースカバー板との間隔が、0.5mm乃至10mmである請求項1に記載のプラズマCVD装置。
- 前記第2のガス排気孔の孔径が、前記ガス排気孔の孔径の0.5倍乃至1.5倍である請求項1に記載のプラズマCVD装置。
- 前記第2のガス導入孔の孔径が、該第2のガス導入孔におけるガスの流動を妨げない範囲で、7mm以下である請求項1に記載のプラズマCVD装置。
- 前記アースカバー板が接地されている請求項1に記載のプラズマCVD装置。
- 前記アースカバー板に、加熱機構が設けられている請求項1に記載のプラズマCVD装置。
- 前記アースカバー板と前記接地電極板との間において、それぞれに対し間隔をおいて、電位制御可能な電位制御板が設けられ、前記複数の第2のガス導入孔に対応する位置に複数の第3のガス導入孔と、前記複数の第2のガス排気孔に対応する位置に複数の第3のガス排気孔とが、前記電位制御板を貫通して、前記電位制御板に設けられている請求項1に記載のプラズマCVD装置。
- 前記電位制御板に印加される電位が、負電位である請求項8に記載のプラズマCVD装置。
- 請求項1乃至9のいずれかに記載のプラズマCVD装置を用い、Si化合物を含む原料ガスをプラズマ化させ、薄膜形成用の基板を支持するための前記接地電極板に前記薄膜形成用の基板を支持せしめ、該基板にシリコン薄膜を堆積させてなるシリコン薄膜の製造方法。
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CN103492064A (zh) * | 2010-11-09 | 2014-01-01 | 三星电子株式会社 | 等离子体发生器及等离子体产生方法 |
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DE102012110125A1 (de) | 2012-10-24 | 2014-04-24 | Aixtron Se | Vorrichtung zum Behandeln von Substraten mit einer auswechselbaren Deckenplatte sowie Verfahren zum Auswechseln einer derartigen Deckenplatte |
US9449795B2 (en) * | 2013-02-28 | 2016-09-20 | Novellus Systems, Inc. | Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor |
US10745280B2 (en) | 2015-05-26 | 2020-08-18 | Department Of Electronics And Information Technology (Deity) | Compact thermal reactor for rapid growth of high quality carbon nanotubes (CNTs) produced by chemical process with low power consumption |
US10755900B2 (en) * | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
DE102020103946A1 (de) | 2020-02-14 | 2021-08-19 | AIXTRON Ltd. | Gaseinlasseinrichtung für einen CVD-Reaktor |
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US11562902B2 (en) * | 2020-07-19 | 2023-01-24 | Applied Materials, Inc. | Hydrogen management in plasma deposited films |
US11502217B1 (en) * | 2021-05-24 | 2022-11-15 | Gautam Ganguly | Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon |
EP4190938B1 (en) * | 2021-12-03 | 2024-03-06 | Semsysco GmbH | Distribution body for distributing a process gas for treating a substrate by means of the process gas |
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EP2498278A1 (en) | 2012-09-12 |
US9243327B2 (en) | 2016-01-26 |
JP5678883B2 (ja) | 2015-03-04 |
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