JPWO2010087388A1 - 光電変換セルおよび光電変換モジュール - Google Patents
光電変換セルおよび光電変換モジュール Download PDFInfo
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- JPWO2010087388A1 JPWO2010087388A1 JP2010548542A JP2010548542A JPWO2010087388A1 JP WO2010087388 A1 JPWO2010087388 A1 JP WO2010087388A1 JP 2010548542 A JP2010548542 A JP 2010548542A JP 2010548542 A JP2010548542 A JP 2010548542A JP WO2010087388 A1 JPWO2010087388 A1 JP WO2010087388A1
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 166
- 239000004065 semiconductor Substances 0.000 claims abstract description 87
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- -1 chalcopyrite compound Chemical class 0.000 description 7
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- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 5
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- 238000005530 etching Methods 0.000 description 4
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- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/541—CuInSe2 material PV cells
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
3:第1半導体層
4:第2半導体層
5:導電層
6:線状部
7、17:接続部
8:第2の電極層
9、29:突出部
20、120、220:光電変換セル
21、121、221:光電変換モジュール
Claims (8)
- 互いに間隔をあけて位置する、第1の電極層および第2の電極層と、
前記第1の電極層上に位置し、第1の導電型を有する第1半導体層と、
前記第1半導体層上に位置し、前記第1半導体層とpn接合する第2の導電型を有する第2半導体層と、
前記第2半導体層と前記第2の電極層とを電気的に接続する接続部と、
前記接続部上から前記第2半導体層上の前記第2半導体層の端部に向けて延びた線状部と、少なくとも一部が上面透過視において前記接続部と重なり且つ前記線状部の短手方向の両端部の少なくとも一方から突出した突出部と、を有する複数の集電電極と、を具備し、
前記複数の集電電極のうち隣接する2つは、それぞれの前記突出部どうしが離隔している、光電変換セル。 - 前記突出部は、前記両端部の一方から突出した第1突出部と他方から突出した第2突出部とを有し、
前記第1突出部及び前記第2突出部は、前記線状部を軸として略線対称である、請求項1記載の光電変換セル。 - 前記第2半導体層と前記複数の集電電極の少なくとも1つとの間に位置する導電層をさらに備える、請求項1記載の光電変換セル。
- 前記導電層は前記第2半導体層から前記第2の電極層に向かって延びる延長部を有し、前記延長部は前記第2の電極層と接続することにより前記導電層が前記接続部を構成する、請求項3記載の光電変換セル。
- 前記接続部は凹部を有し、前記複数の集電電極の少なくとも1つの前記突出部の少なくとも一部が前記凹部の内部に位置する、請求項1記載の光電変換セル。
- 前記複数の集電電極の少なくとも1つの前記突出部が前記第2の電極層と接続することにより前記接続部を構成する、請求項1記載の光電変換セル。
- 前記複数の集電電極の少なくとも1つの前記突出部の先端面は、前記第1半導体層の側面及び前記第2半導体層の側面の少なくとも一方に対して傾斜した状態で対向している、請求項1記載の光電変換セル。
- 請求項1記載の光電変換セルを複数備え、
前記複数の光電変換セルは第1の光電変換セルと第2の光電変換セルとを有し、
前記第1および第2の光電変換セルは、それぞれの前記第1および第2の電極層が同じ方向に向いて位置し、且つ、前記第1の光電変換セルの前記第2の電極層と前記第2の光電変換セルの前記第1の電極層とが電気的に接続している、
光電変換モジュール。
Priority Applications (1)
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JP2010548542A JP5220134B2 (ja) | 2009-01-29 | 2010-01-28 | 光電変換セルおよび光電変換モジュール |
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JP2009018411 | 2009-01-29 | ||
JP2009018411 | 2009-01-29 | ||
JP2010548542A JP5220134B2 (ja) | 2009-01-29 | 2010-01-28 | 光電変換セルおよび光電変換モジュール |
PCT/JP2010/051095 WO2010087388A1 (ja) | 2009-01-29 | 2010-01-28 | 光電変換セルおよび光電変換モジュール |
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JPWO2010087388A1 true JPWO2010087388A1 (ja) | 2012-08-02 |
JP5220134B2 JP5220134B2 (ja) | 2013-06-26 |
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US (1) | US20110174373A1 (ja) |
EP (1) | EP2383795B1 (ja) |
JP (1) | JP5220134B2 (ja) |
CN (1) | CN102132419B (ja) |
WO (1) | WO2010087388A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012156423A (ja) * | 2011-01-28 | 2012-08-16 | Kyocera Corp | 光電変換装置の製造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5377520B2 (ja) * | 2009-01-29 | 2013-12-25 | 京セラ株式会社 | 光電変換セル、光電変換モジュールおよび光電変換セルの製造方法 |
KR101028310B1 (ko) * | 2009-06-30 | 2011-04-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
JP2011151271A (ja) * | 2010-01-22 | 2011-08-04 | Rohm Co Ltd | 光電変換装置およびその製造方法、および固体撮像装置 |
KR101060239B1 (ko) * | 2010-08-26 | 2011-08-29 | 한국과학기술원 | 집적형 박막 광기전력 소자 및 그의 제조 방법 |
JP2012094748A (ja) * | 2010-10-28 | 2012-05-17 | Kyocera Corp | 光電変換装置 |
DE202012013580U1 (de) * | 2011-09-27 | 2018-01-09 | Wilhelm Stein | Fotovoltaikmodul und Herstellungsanlage zur Herstellung eines Fotovoltaikmoduls |
WO2013164926A1 (ja) * | 2012-05-01 | 2013-11-07 | 株式会社村田製作所 | 高周波フィルタ |
US20140261657A1 (en) * | 2013-03-14 | 2014-09-18 | Tsmc Solar Ltd. | Thin film solar cell and method of forming same |
CN104051551B (zh) * | 2013-03-14 | 2017-03-01 | 台湾积体电路制造股份有限公司 | 薄膜太阳能电池及其形成方法 |
CN108767030B (zh) * | 2017-04-23 | 2020-07-07 | 佛山市阳邦光电科技有限公司 | 一种光伏太阳能电池组件 |
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US4795500A (en) * | 1985-07-02 | 1989-01-03 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JPS625671A (ja) * | 1985-07-02 | 1987-01-12 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
DE4009336A1 (de) * | 1990-03-23 | 1991-09-26 | Telefunken Systemtechnik | Solarzelle |
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JP3825843B2 (ja) * | 1996-09-12 | 2006-09-27 | キヤノン株式会社 | 太陽電池モジュール |
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JP2000299486A (ja) * | 1999-04-12 | 2000-10-24 | Honda Motor Co Ltd | 太陽電池 |
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JP4907331B2 (ja) * | 2006-12-25 | 2012-03-28 | 京セラ株式会社 | 光電変換素子用導電性ペースト、光電変換素子、および光電変換素子の作製方法 |
EP2105970A4 (en) * | 2006-12-26 | 2015-08-05 | Kyocera Corp | SOLAR CELL MODULE |
WO2008157807A2 (en) * | 2007-06-20 | 2008-12-24 | Ascent Solar Technologies, Inc. | Array of monolithically integrated thin film photovoltaic cells and associated methods |
EP2224495A4 (en) * | 2007-12-05 | 2018-01-10 | Kaneka Corporation | Multilayer thin-film photoelectric converter and its manufacturing method |
-
2010
- 2010-01-28 US US13/120,145 patent/US20110174373A1/en not_active Abandoned
- 2010-01-28 WO PCT/JP2010/051095 patent/WO2010087388A1/ja active Application Filing
- 2010-01-28 JP JP2010548542A patent/JP5220134B2/ja active Active
- 2010-01-28 EP EP10735853.3A patent/EP2383795B1/en active Active
- 2010-01-28 CN CN201080002412.9A patent/CN102132419B/zh not_active Expired - Fee Related
Cited By (1)
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JP2012156423A (ja) * | 2011-01-28 | 2012-08-16 | Kyocera Corp | 光電変換装置の製造方法 |
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US20110174373A1 (en) | 2011-07-21 |
WO2010087388A1 (ja) | 2010-08-05 |
EP2383795B1 (en) | 2014-07-02 |
CN102132419A (zh) | 2011-07-20 |
EP2383795A1 (en) | 2011-11-02 |
CN102132419B (zh) | 2012-12-26 |
EP2383795A4 (en) | 2013-08-21 |
JP5220134B2 (ja) | 2013-06-26 |
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