JPWO2010038421A1 - スパッタリング装置及びスパッタリング方法 - Google Patents
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- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000005546 reactive sputtering Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
A=a・B・・・(2)
Claims (13)
- 基板をその処理面に垂直な回転軸回りに回転可能に保持する基板ホルダと、
前記基板の周囲に配設され、前記基板と共に又は基板と同期して回転可能であって、前記基板の処理面に磁場を形成する基板磁場形成装置と、
前記基板の斜め向かいの位置に配置され、放電電力が供給されるカソードと、
前記基板の回転位置を検出する位置検出装置と、
前記位置検出装置の検出した前記基板の回転位置に応じて、前記基板の回転速度を制御する制御装置と
を備えることを特徴とするスパッタリング装置。 - 前記基板は、前記磁場の形成状態により生じる、スパッタリング粒子が引き付けられやすい第1部分と、前記第1部分よりもスパッタリング粒子の引き付け力が弱い第2部分とを備え、
前記制御装置は、前記基板の第1部分が、放電電力の供給により放電中のカソードに近い位置にあるときに前記基板の回転速度を第1の回転速度に制御し、前記基板の第2部分が前記放電中のカソードに近い位置にあるときに前記基板の回転速度を前記第1の回転速度よりも遅い第2の回転速度に制御することを特徴とする請求項1に記載のスパッタリング装置。 - 前記制御装置は、前記第1部分が放電電力の供給により放電中のカソードに近付くにしたがって徐々に前記基板の回転速度を増加させて前記第1の回転速度に制御し、前記第2部分が前記放電中のカソードに近付くにしたがって徐々に前記基板の回転速度を減少させて前記第2の回転速度に制御することを特徴とする請求項2に記載のスパッタリング装置。
- 前記基板磁場形成装置が、前記基板の処理面内で一方向を向いた一方向磁場を形成するもので、該一方向磁場の方向と平行に伸ばした、前記基板の中心を通る直線が、前記基板磁場形成装置のN極側で交差する前記基板の周縁部をN極側中央縁部とし、該直線が前記基板磁場形成装置のS極側で交差する前記基板の周縁部をS極側中央縁部とした時に、前記第1部分がN極側中央縁部で、前記第2部分がS極側中央縁部であることを特徴とする請求項2又は3に記載のスパッタリング装置。
- 前記制御装置は、前記基板の回転角の正弦波関数として前記回転速度を算出して前記基板の回転速度を制御することを特徴とする請求項4に記載のスパッタリング装置。
- 選択的に放電電力を供給可能な複数のカソードが設けられていることを特徴とする請求項2又は3に記載のスパッタリング装置。
- 基板をその処理面に垂直な回転軸回りに回転可能に保持する基板ホルダと、
前記基板の周囲に配設され、前記基板と共に又は基板と同期して回転可能であって、前記基板の処理面内に一方向を向いた一方向磁場を形成する電磁石で構成された基板磁場形成装置と、
前記基板の斜め向かいの位置に配置され、放電電力が供給されるカソードと、
前記基板の回転位置を検出する位置検出装置と、
前記位置検出装置の検出した前記基板の回転位置に応じて、前記基板磁場形成装置へ供給する電流を制御する制御装置とを備え、
前記一方向磁場の方向と平行に伸ばした、前記基板の中心を通る直線が、前記基板磁場形成装置のN極側で交差する前記基板の周縁部をN極側中央縁部とし、前記直線が前記基板磁場形成装置のS極側で交差する前記基板の周縁部をS極側中央縁部とした時に、
前記制御装置は、前記基板磁場形成装置へ供給する電流の調整によって、前記N極側中央縁部が放電電力の供給により放電中のカソードに近づくにしたがってN極の磁力を徐々に減少させ、前記S極側中央縁部が前記放電中のカソードに近づくにしたがってN極の磁力を徐々に増加させることを特徴とするスパッタリング装置。 - 基板の処理面に沿って磁場を形成した状態で、前記基板を前記処理面に対して垂直な回転軸回りに回転させながら、前記基板の処理面の斜め方向からのスパッタリングにより磁性膜を形成するスパッタリング方法において、
前記基板の回転位置に応じて、前記基板の回転速度を制御することを特徴とするスパッタリング方法。 - 前記基板は、前記磁場の形成状態により生じる、スパッタリング粒子が引き付けられやすい第1部分と、前記第1部分よりもスパッタリング粒子の引き付け力が弱い第2部分とを備え、
前記基板の第1部分が、放電電力の供給により放電中のカソードに近い位置にあるときに前記基板の回転速度を第1の回転速度とし、前記基板の第2部分が前記放電中のカソードに近い位置にあるときに前記基板の回転速度を前記第1の回転速度よりも遅い第2の回転速度とすることを特徴とする請求項8に記載のスパッタリング方法。 - 前記第1部分が放電電力の供給により放電中のカソードに近付くにしたがって徐々に前記基板の回転速度を増加させて前記第1の回転速度とし、前記第2部分が前記放電中のカソードに近付くにしたがって徐々に前記基板の回転速度を減少させて前記第2の回転速度とすることを特徴とする請求項9に記載のスパッタリング方法。
- 前記基板の処理面に沿って形成する磁場を、前記基板の処理面内で一方向を向いた一方向磁場とし、該一方向磁場の方向と平行に伸ばした、前記基板の中心を通る直線が、前記基板磁場形成装置のN極側で交差する前記基板の周縁部をN極側中央縁部とし、前記直線が前記基板磁場形成装置のS極側で交差する前記基板の周縁部をS極側中央縁部とした時に、
前記第1部分がN極側中央縁部で、前記第2部分がS極側中央縁部であることを特徴とする請求項9又は10に記載のスパッタリング方法。 - 前記基板の回転角の正弦波関数として前記回転速度を算出して前記基板の回転速度を制御することを特徴とする請求項11に記載のスパッタリング方法。
- 基板の処理面内に一方向を向いた一方向磁場を電磁石により形成した状態で、前記基板を前記処理面に対して垂直な回転軸回りに回転させながら、前記基板の処理面の斜め方向からのスパッタリングにより磁性膜を形成するスパッタリング方法において、
前記一方向磁場の方向と平行に伸ばした、前記基板の中心を通る直線が、前記基板磁場形成装置のN極側で交差する前記基板の周縁部をN極側中央縁部とし、前記直線が前記基板磁場形成装置のS極側で交差する前記基板の周縁部をS極側中央縁部とした時に、
前記電磁石へ供給する電流の調整により、前記N極側中央縁部が放電電力の供給により放電中のカソードに近づくにしたがってN極の磁力を徐々に減少させ、前記S極側中央縁部が前記放電中のカソードに近づくにしたがってN極の磁力を徐々に増加させることを特徴とするスパッタリング方法。
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