JPWO2009096251A1 - アモルファスハイドロカーボン膜の後処理方法およびその方法を用いた電子デバイスの製造方法 - Google Patents
アモルファスハイドロカーボン膜の後処理方法およびその方法を用いた電子デバイスの製造方法 Download PDFInfo
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
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- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
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- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
Description
まず、本発明の第1実施形態にかかるアモルファスハイドロカーボン膜の後処理方法を含んだ電子デバイスの製造工程について、工程断面図及びその手順を示した図1を参照しながら説明する。
つぎに、本実施形態にかかるアモルファスハイドロカーボン膜の後処理方法の効果を実証するために、実際に発明者が行った実験及びその実験結果について、図6A、図6B、図7A及び図7Bを参照しながら説明する。
(1)温度 350℃
(2)温度 400℃
次に、本発明の第2実施形態に係るアモルファスハイドロカーボン膜の後処理方法を含んだ電子デバイスの製造工程について、工程断面図及びその手順を示した図8を参照しながら説明する。
110 アモルファスハイドロカーボン膜
200 プロセスコントローラ
200a CPU
200b ROM
200c RAM
PM1 アモルファスハイドロカーボン成膜処理装置
PM2 加熱処理装置
PM3 加熱処理装置(シラン雰囲気)
PM4 成膜処理装置
Sub シリコン基板
Sys 処理システム
Claims (17)
- アモルファスハイドロカーボン膜の後処理方法であって、
基板上にアモルファスハイドロカーボン膜を成膜し、
所望のタイミングにSixHy系ガスを供給しながら、前記成膜されたアモルファスハイドロカーボン膜にSixHy系ガスの雰囲気中にて加熱処理を施すアモルファスハイドロカーボン膜の後処理方法。 - 前記SixHy系ガスの雰囲気中の加熱処理は、SixHy系ガスの蒸気を前記アモルファスハイドロカーボン膜の表面に接触させる請求項1に記載されたアモルファスハイドロカーボン膜の後処理方法。
- 前記SixHy系ガスは、モノメチルシラン、ジメチルシラン、トリメチルシランのいずれかを含む請求項1に記載されたアモルファスハイドロカーボン膜の後処理方法。
- 前記SixHy系ガスの雰囲気中の加熱処理は、200℃〜400℃の温度で実行される請求項1に記載されたアモルファスハイドロカーボン膜の後処理方法。
- 前記SixHy系ガスの雰囲気中の加熱処理は、前記アモルファスハイドロカーボン膜に前もって前記SixHy系ガスの雰囲気中でない加熱処理が実行された直後に行われる請求項1に記載されたアモルファスハイドロカーボン膜の後処理方法。
- 前記SixHy系ガスの雰囲気中の加熱処理は、大気圧〜1Torrの圧力で実行される請求項1に記載されたアモルファスハイドロカーボン膜の後処理方法。
- 前記SixHy系ガスの雰囲気中の加熱処理は、10分〜30分間実行される請求項1に記載されたアモルファスハイドロカーボン膜の後処理方法。
- 前記アモルファスハイドロカーボン膜は、10nm以下の膜厚である請求項1に記載されたアモルファスハイドロカーボン膜の後処理方法。
- 前記SixHy系ガスの雰囲気中でない加熱処理は、アニール処理である請求項1に記載されたアモルファスハイドロカーボン膜の後処理方法。
- 基板上にアモルファスハイドロカーボン膜を形成する工程と、
所望のタイミングにSixHy系ガスを供給しながら、前記成膜されたアモルファスハイドロカーボン膜にSixHy系ガスの雰囲気中にて加熱処理を施す工程と、を含む電子デバイスの製造方法。 - 前記SixHy系ガスの雰囲気中にて加熱処理を施す工程後、前記アモルファスハイドロカーボン膜上に所定の膜を成膜する工程を含む請求項10に記載された電子デバイスの製造方法。
- 前記SixHy系ガスの雰囲気中にて加熱処理を施す工程は、SixHy系ガスの蒸気を前記アモルファスハイドロカーボン膜の表面に接触させる請求項10に記載された電子デバイスの製造方法。
- 前記SixHy系ガスの雰囲気中にて加熱処理を施す工程は、200℃〜400℃の温度で実行される請求項10に記載された電子デバイスの製造方法。
- アモルファスハイドロカーボン膜は、層間絶縁膜である請求項10に記載された電子デバイスの製造方法。
- 請求項1に記載されたアモルファスハイドロカーボン膜の後処理方法をコンピュータに実現させるための制御プログラムが記憶されたコンピュータ読取可能な記憶媒体。
- 請求項10に記載された電子デバイスの製造方法をコンピュータに実現させるための制御プログラムが記憶されたコンピュータ読取可能な記憶媒体。
- アモルファスハイドロカーボン膜の成膜処理装置と加熱処理装置とを含み、電子デバイスを製造する処理システムであって、
前記成膜処理装置を使用して基板上にアモルファスハイドロカーボン膜を成膜し、
所望のタイミングにSixHy系ガスを供給しながら、前記加熱処理装置を使用して前記アモルファスハイドロカーボン膜にSixHy系ガスの雰囲気中にて加熱処理を施す処理システム。
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