JPWO2009041560A1 - プラズマエッチング方法 - Google Patents
プラズマエッチング方法 Download PDFInfo
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- JPWO2009041560A1 JPWO2009041560A1 JP2009534397A JP2009534397A JPWO2009041560A1 JP WO2009041560 A1 JPWO2009041560 A1 JP WO2009041560A1 JP 2009534397 A JP2009534397 A JP 2009534397A JP 2009534397 A JP2009534397 A JP 2009534397A JP WO2009041560 A1 JPWO2009041560 A1 JP WO2009041560A1
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- gas
- plasma etching
- plasma
- fluorinated hydrocarbon
- etching method
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000001020 plasma etching Methods 0.000 title claims abstract description 35
- 239000007789 gas Substances 0.000 claims abstract description 72
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 63
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 38
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 36
- 238000012545 processing Methods 0.000 claims abstract description 35
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 239000000758 substrate Substances 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- AWDCOETZVBNIIV-UHFFFAOYSA-N 1,3,3,4,4,5,5-heptafluorocyclopentene Chemical compound FC1=CC(F)(F)C(F)(F)C1(F)F AWDCOETZVBNIIV-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004817 gas chromatography Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- MZPZBRBIEBBNIA-UPHRSURJSA-N (z)-1,1,1,3,4,4,5,5,5-nonafluoropent-2-ene Chemical compound FC(F)(F)\C=C(/F)C(F)(F)C(F)(F)F MZPZBRBIEBBNIA-UPHRSURJSA-N 0.000 description 3
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- DAFSRGHZDWBZKC-UPHRSURJSA-N (z)-1,1,1,2,4,4,5,5,5-nonafluoropent-2-ene Chemical compound FC(F)(F)C(/F)=C/C(F)(F)C(F)(F)F DAFSRGHZDWBZKC-UPHRSURJSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 2
- LLWOTXGDASOOFF-UHFFFAOYSA-N (2-ethyl-1-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC1C(CC)C2(OC(=O)C(C)=C)C3 LLWOTXGDASOOFF-UHFFFAOYSA-N 0.000 description 1
- YIFLMZOLKQBEBO-UPHRSURJSA-N (z)-1,1,1,2,4,4,4-heptafluorobut-2-ene Chemical compound FC(F)(F)C(/F)=C/C(F)(F)F YIFLMZOLKQBEBO-UPHRSURJSA-N 0.000 description 1
- XLBRGJIDBAPJTL-UHFFFAOYSA-N 1,1,1,2,5,5,5-heptafluoropenta-2,3-diene Chemical compound FC(F)(F)C(F)=C=CC(F)(F)F XLBRGJIDBAPJTL-UHFFFAOYSA-N 0.000 description 1
- CVMVAHSMKGITAV-UHFFFAOYSA-N 1,1,1,4,4,5,5,5-octafluoropent-2-ene Chemical compound FC(F)(F)C=CC(F)(F)C(F)(F)F CVMVAHSMKGITAV-UHFFFAOYSA-N 0.000 description 1
- HSXGEEMQVFBDOK-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5-nonafluorocyclohexane Chemical compound FC1CC(F)(F)C(F)(F)C(F)(F)C1(F)F HSXGEEMQVFBDOK-UHFFFAOYSA-N 0.000 description 1
- SOJZMJXWEOBDIC-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5-nonafluorocyclopentane Chemical compound FC1C(F)(F)C(F)(F)C(F)(F)C1(F)F SOJZMJXWEOBDIC-UHFFFAOYSA-N 0.000 description 1
- QVEJLBREDQLBKB-UHFFFAOYSA-N 1,1,2,2,3,3,4,5-octafluorocyclopentane Chemical compound FC1C(F)C(F)(F)C(F)(F)C1(F)F QVEJLBREDQLBKB-UHFFFAOYSA-N 0.000 description 1
- LGWNSTJNCWGDPH-UHFFFAOYSA-N 1,1,2,2,3,3,4-heptafluorocyclobutane Chemical compound FC1C(F)(F)C(F)(F)C1(F)F LGWNSTJNCWGDPH-UHFFFAOYSA-N 0.000 description 1
- DGLFZUBOMRZNQX-UHFFFAOYSA-N 1,1,2,2,3,3-hexafluorocyclobutane Chemical compound FC1(F)CC(F)(F)C1(F)F DGLFZUBOMRZNQX-UHFFFAOYSA-N 0.000 description 1
- LMSLTAIWOIYSGZ-UHFFFAOYSA-N 1,1,2,2,3,4-hexafluorocyclobutane Chemical compound FC1C(F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-UHFFFAOYSA-N 0.000 description 1
- GWTYBRLZXLPKEI-UHFFFAOYSA-N 1,1,2,3,3,5,5-heptafluoropenta-1,4-diene Chemical compound FC(F)=CC(F)(F)C(F)=C(F)F GWTYBRLZXLPKEI-UHFFFAOYSA-N 0.000 description 1
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 description 1
- RCGWWNMFBGSXJO-UHFFFAOYSA-N 1,1,2,3,4-pentafluorobuta-1,3-diene Chemical compound FC=C(F)C(F)=C(F)F RCGWWNMFBGSXJO-UHFFFAOYSA-N 0.000 description 1
- YOGWWIMHUBDKEK-UHFFFAOYSA-N 1,1,2,3,5,5,5-heptafluoropenta-1,3-diene Chemical compound FC(F)=C(F)C(F)=CC(F)(F)F YOGWWIMHUBDKEK-UHFFFAOYSA-N 0.000 description 1
- GYMLLFSTNRFMDH-UHFFFAOYSA-N 1,1,2,4,4-pentafluorobuta-1,3-diene Chemical compound FC(F)=CC(F)=C(F)F GYMLLFSTNRFMDH-UHFFFAOYSA-N 0.000 description 1
- OIABWTRIRWVJGR-UHFFFAOYSA-N 1,1,2,4,5,5,5-heptafluoropenta-1,3-diene Chemical compound FC(F)=C(F)C=C(F)C(F)(F)F OIABWTRIRWVJGR-UHFFFAOYSA-N 0.000 description 1
- GCNWWRIQEJNUIF-UHFFFAOYSA-N 1,1,3,3,4,4,4-heptafluorobut-1-ene Chemical compound FC(F)=CC(F)(F)C(F)(F)F GCNWWRIQEJNUIF-UHFFFAOYSA-N 0.000 description 1
- NRWXKFNYCVGVGP-UHFFFAOYSA-N 1,1,3,3,4,4,5,5,5-nonafluoropent-1-ene Chemical compound FC(F)=CC(F)(F)C(F)(F)C(F)(F)F NRWXKFNYCVGVGP-UHFFFAOYSA-N 0.000 description 1
- FEKOYLWIDAWJJO-UHFFFAOYSA-N 1,1,3,4,5,5,5-heptafluoropenta-1,3-diene Chemical compound FC(F)=CC(F)=C(F)C(F)(F)F FEKOYLWIDAWJJO-UHFFFAOYSA-N 0.000 description 1
- HYTKGOKJPJIFKE-UHFFFAOYSA-N 1,1,4,4,4-pentafluorobuta-1,2-diene Chemical compound FC(F)=C=CC(F)(F)F HYTKGOKJPJIFKE-UHFFFAOYSA-N 0.000 description 1
- PVYYRPAHXQUHAW-UHFFFAOYSA-N 1,2,3,3,4,4,4-heptafluorobut-1-ene Chemical compound FC=C(F)C(F)(F)C(F)(F)F PVYYRPAHXQUHAW-UHFFFAOYSA-N 0.000 description 1
- YAQXNCHHASYLCA-UHFFFAOYSA-N 1,2,3,3,4,4,5,5,5-nonafluoropent-1-ene Chemical compound FC=C(F)C(F)(F)C(F)(F)C(F)(F)F YAQXNCHHASYLCA-UHFFFAOYSA-N 0.000 description 1
- YBMDPYAEZDJWNY-UHFFFAOYSA-N 1,2,3,3,4,4,5,5-octafluorocyclopentene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C1(F)F YBMDPYAEZDJWNY-UHFFFAOYSA-N 0.000 description 1
- JQAHBADBSNZKFG-UHFFFAOYSA-N 1,2,3,3,4,4,5-heptafluorocyclopentene Chemical compound FC1C(F)=C(F)C(F)(F)C1(F)F JQAHBADBSNZKFG-UHFFFAOYSA-N 0.000 description 1
- AHACWOXYXYGDFX-UHFFFAOYSA-N 1,2,3,4,5,5,5-heptafluoropenta-1,3-diene Chemical compound FC=C(F)C(F)=C(F)C(F)(F)F AHACWOXYXYGDFX-UHFFFAOYSA-N 0.000 description 1
- FNURRVLRQSNEFB-UHFFFAOYSA-N 1,3,3,4,4-pentafluorocyclobutene Chemical compound FC1=CC(F)(F)C1(F)F FNURRVLRQSNEFB-UHFFFAOYSA-N 0.000 description 1
- YFXQXQZYDBLEBS-UHFFFAOYSA-N 1,3,4,4,4-pentafluorobuta-1,2-diene Chemical compound FC=C=C(F)C(F)(F)F YFXQXQZYDBLEBS-UHFFFAOYSA-N 0.000 description 1
- NWMATEGFVRCESY-UHFFFAOYSA-N 1,3,4,4,5,5,5-heptafluoropenta-1,2-diene Chemical compound FC=C=C(F)C(F)(F)C(F)(F)F NWMATEGFVRCESY-UHFFFAOYSA-N 0.000 description 1
- VYUMQBPXHHGOOU-UHFFFAOYSA-N 1,3,4,4,5,5-hexafluorocyclopentene Chemical compound FC1C=C(F)C(F)(F)C1(F)F VYUMQBPXHHGOOU-UHFFFAOYSA-N 0.000 description 1
- PRDFNJUWGIQQBW-UHFFFAOYSA-N 3,3,3-trifluoroprop-1-yne Chemical compound FC(F)(F)C#C PRDFNJUWGIQQBW-UHFFFAOYSA-N 0.000 description 1
- ABZMZXICVVVZFV-UHFFFAOYSA-N 3,3,4,4,4-pentafluorobut-1-yne Chemical compound FC(F)(F)C(F)(F)C#C ABZMZXICVVVZFV-UHFFFAOYSA-N 0.000 description 1
- GQXURUTWTUSYPE-UHFFFAOYSA-N 3,3,4,4,5,5,5-heptafluoropent-1-yne Chemical compound FC(F)(F)C(F)(F)C(F)(F)C#C GQXURUTWTUSYPE-UHFFFAOYSA-N 0.000 description 1
- FHQKLIHFKVAEEP-UHFFFAOYSA-N 3,3,4,4,5,5-hexafluorocyclopentene Chemical compound FC1(F)C=CC(F)(F)C1(F)F FHQKLIHFKVAEEP-UHFFFAOYSA-N 0.000 description 1
- GHTJJDFBXCKNEO-UHFFFAOYSA-N 3,3,4,4-tetrafluorocyclobutene Chemical compound FC1(F)C=CC1(F)F GHTJJDFBXCKNEO-UHFFFAOYSA-N 0.000 description 1
- XVWWKXCMZXAERD-UHFFFAOYSA-N 3,4,4,4-tetrafluoro-3-(trifluoromethyl)but-1-yne Chemical compound FC(F)(F)C(F)(C#C)C(F)(F)F XVWWKXCMZXAERD-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- -1 electrons Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- OCUXHFVNHQTZKR-UHFFFAOYSA-M methanesulfonate;triphenylsulfanium Chemical compound CS([O-])(=O)=O.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 OCUXHFVNHQTZKR-UHFFFAOYSA-M 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920006027 ternary co-polymer Polymers 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
しかしながら、この文献記載の方法は複数種類の処理ガスを用いるため、ガスの切り替えに煩雑な過程が必要であり、生産効率の面から工業的に満足できるものとはいえなかった。
本発明のプラズマエッチング方法は、シリコン酸化膜を、マスクを介して、処理ガスを用いてプラズマエッチングするプラズマエッチング方法であって、前記処理ガスが、酸素ガス、および、式(1):CxHyFzで表されるフッ素化炭化水素を含むことを特徴とする。
本発明のプラズマエッチング方法においては、処理ガスとして、酸素ガス、および、式(1):CxHyFzで表されるフッ素化炭化水素(以下、「フッ素化炭化水素(1)」ということがある。)を含むものを用いる。
前記式(1)中、xは4〜6のいずれかの整数を表し、yは1〜4のいずれかの整数を表し、zは正の整数を表し、かつ、(y+z)は2x以下である。
例えば、1,3,3,4,4,5,5−ヘプタフルオロシクロペンテンは、Journal of American Chemical Society,1964年,Vol.86,5361に記載された方法で製造することができる。
酸素ガスの使用割合は、フッ素化炭化水素(1)ガスに対し、容量比で0.1〜50となることが好ましく、0.5〜30となることがより好ましい。
対レジストエッチング選択比とは、(シリコン酸化膜の平均エッチング速度)/(レジストの平均エッチング速度)をいう。この対レジストエッチング選択比が高いことをレジストに対してエッチング選択性を有するともいう。フッ素化炭化水素(1)ガスは、エッチング選択性を有するため、レジストを破壊することなくシリコン酸化膜を効率よくエッチングすることが可能である。
本発明のプラズマエッチング方法において、「エッチング」とは、半導体製造装置の製造工程などで用いられる被処理体に、極めて高集積化された微細パターンを食刻する技術をいう。また、「プラズマエッチング」とは、処理ガス(反応性プラズマガス)に高周波の電場を印加してグロー放電を起こさせ、気体化合物を化学的に活性なイオン、電子、ラジカルに分離させて、その化学反応を利用してエッチングを行うことをいう。
処理ガスが導入された処理室内の圧力は、通常0.0013〜1300Pa、好ましくは0.13〜3Pa、より好ましくは0.13〜2Paである。
エッチング処理の時間は、一般的には5〜10分であるが、本発明に用いる処理ガスは、高速エッチングが可能なので、2〜5分として生産性を向上させることができる。
・装置:ヒューレットパッカード社製 HP6890
・カラム:NEUTRA BOND−1、Length 60m/ID 250μm/film 1.50μm
・検出器:FID
・インジェクション温度:150℃
・ディテクター温度:250℃
・キャリアーガス:窒素ガス(23.2mL/分)
・メイクアップガス:窒素ガス(30mL/分)、水素ガス(50mL/分)、空気(400mL/分)
・スプリット比:137/1
・昇温プログラム:(1)40℃で20分保持、(2)40℃/分で昇温、(3)250℃で14.75分保持
1,3,3,4,4,5,5−ヘプタフルオロシクロペンテンを、Journal of American Chemical Society,1964年,Vol.86,5361に記載の方法に従って合成した。
2,2,2−トリフルオロメチルメタクリレート、2−エチルアダマンチルメタクリレート及びt−ブチルメタクリレートからなる三元共重合体〔共重合比:0.4:0.35:0.25(モル比)、分子量8700〕10部、及び光酸発生剤であるトリフェニルスルホニウムメタンスルホネート0.15部をプロピレングリコールモノメチルエーテルアセテート70部に溶解し、孔径100nmのフィルターでろ過し、レジスト溶液を調製した。このレジスト溶液を、厚さ約2μmのシリコン酸化膜を形成した8インチのシリコン基板上にスピンコート法により塗布し、ホットプレート上、120℃でプリベークを行って膜厚18000nmのレジスト膜を形成した。このレジスト膜にX線露光装置によりマスクパターンを介して露光した。その後、130℃にてポストベークを行い、2.38%のテトラメチルアンモニウムヒドロキシド水溶液を用いて25℃で60秒間現像し、乾燥して、膜厚600nmのレジストパターンを形成した。
そのときのエッチング速度、レジストに対する選択性(選択比)、およびパターン形状を第1表に示す。
プラズマ反応用ガスとして、1,3,3,4,4,5,5−ヘプタフルオロシクロペンテンに代えて、ヘキサフルオロ−1,3−ブタジエンを用い、酸素ガスを18sccmの速度でエッチングチャンバー内へ導入する以外は、実施例と同様の実験を行った。そのときのエッチング速度、レジストに対する選択性(選択比)、およびパターン形状を第1表に示す。
Claims (4)
- シリコン酸化膜を、マスクを介して、処理ガスを用いてプラズマエッチングするプラズマエッチング方法であって、前記処理ガスが、酸素ガス、および、式(1):CxHyFz〔式中、xは4〜6のいずれかの整数を表し、yは1〜4のいずれかの整数を表し、zは正の整数を表し、かつ、(y+z)は2x以下である。〕で表されるフッ素化炭化水素を含むことを特徴とするプラズマエッチング方法。
- 前記処理ガスが、さらに、ヘリウム、アルゴン、ネオン、クリプトン、キセノンからなる群から選ばれる少なくとも1種の18属ガスを含むことを特徴とする請求項1に記載のプラズマエッチング方法。
- 前記式(1)で表されるフッ素化炭化水素が、不飽和結合を有する化合物であることを特徴とする請求項1または2に記載のプラズマエッチング方法。
- 前記式(1)で表されるフッ素化炭化水素が、1つの不飽和結合を有し、かつ該不飽和結合を形成する炭素原子に少なくとも1つの水素原子が結合した化合物であることを特徴とする請求項1または2に記載のプラズマエッチング方法。
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