JPWO2006097976A1 - 量子デバイス、その制御方法及びその製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000002096 quantum dot Substances 0.000 claims abstract description 66
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
Description
先ず、本発明の第1の実施形態について説明する。但し、ここでは、便宜上、量子デバイスの断面構造については、その製造方法と共に説明する。図1A乃至図1Eは、本発明の第1の実施形態に係る量子デバイスの製造方法を工程順に示す断面図である。
次に、本発明の第2の実施形態について説明する。図7Aは、本発明の第2の実施形態に係る量子デバイスの構造を示す断面図であり、図7Bは、第2の実施形態に係る量子デバイスの構造を示す平面図である。
Claims (20)
- 単一の電子を含む第1の量子構造体と、
発光が可能な第2の量子構造体と、
前記第1及び第2の量子構造体の間に形成されたバリア層と、
を有し、
前記第2の量子構造体内の電子の基底レベルは、前記第1の量子構造体内の電子の基底レベルよりも高く、
前記バリア層のバンドギャップは、前記第1及び第2の量子構造体のバンドギャップよりも大きいことを特徴とする量子デバイス。 - 前記第1の量子構造体は量子ドットであることを特徴とする請求項1に記載の量子デバイス。
- 前記第2の量子構造体は量子ドットであることを特徴とする請求項1に記載の量子デバイス。
- 前記第2の量子構造体は量子リングであることを特徴とする請求項2に記載の量子デバイス。
- 前記第1の量子構造体は量子リングであることを特徴とする請求項3に記載の量子デバイス。
- 前記第1の量子構造体中の単一の電子は、不純物のドーピング、光学的な注入及び電気的な注入からなる群から選択された1種の処理により存在させられたものであることを特徴とする請求項1に記載の量子デバイス。
- 前記第2の量子構造体内の電子の基底レベルと前記第1の量子構造体内の電子の基底レベルとの差は100meV以上であることを特徴とする請求項1に記載の量子デバイス。
- 前記第1及び第2の量子構造体の間の実効距離は5nm以下であることを特徴とする請求項1に記載の量子デバイス。
- 前記バリア層の厚さは1乃至2nmであることを特徴とする請求項1に記載の量子デバイス。
- 前記第2の量子構造体の励起子寿命は10ns以上であることを特徴とする請求項1に記載の量子デバイス。
- 単一の電子を含む第1の量子構造体と、発光が可能な第2の量子構造体と、前記第1及び第2の量子構造体の間に形成されたバリア層と、を有し、前記第2の量子構造体内の電子の基底レベルが前記第1の量子構造体内の電子の基底レベルよりも高く、前記バリア層のバンドギャップが前記第1及び第2の量子構造体のバンドギャップよりも大きい量子デバイスの制御方法であって、
前記量子デバイスに磁場及びマイクロ波を印加する工程と、
前記第2の量子構造体にレーザを照射する工程と、
前記第2の量子構造体からの偏光発光の共鳴ピークを検出する工程と、
を有することを特徴とする量子デバイスの制御方法。 - 前記レーザを照射する工程の後に、前記磁場の大きさを走査する工程を有することを特徴とする請求項11に記載の量子デバイスの制御方法。
- 前記レーザを照射する工程の後に、前記マイクロ波の周波数を走査する工程を有することを特徴とする請求項11に記載の量子デバイスの制御方法。
- 前記レーザを照射する工程において、近接場光学顕微鏡を用いて照射位置の制御を行うことを特徴とする請求項11に記載の量子デバイスの制御方法。
- 前記レーザを照射する工程において、前記第1の量子構造体を励起させずに安定な状態に保つことを特徴とする請求項11に記載の量子デバイスの制御方法。
- 第1の量子構造体を形成する工程と、
前記第1の量子構造体の上又は上方に、バリア層を形成する工程と、
前記バリア層上に第2の量子構造体を形成する工程と、
を有し、
前記第2の量子構造体内の電子の基底レベルは、前記第1の量子構造体内の電子の基底レベルよりも高く、
前記バリア層のバンドギャップは、前記第1及び第2の量子構造体のバンドギャップよりも大きいことを特徴とする量子デバイスの製造方法。 - 前記第1の量子構造体として量子ドットを形成することを特徴とする請求項16に記載の量子デバイスの製造方法。
- 前記第2の量子構造体として量子ドットを形成することを特徴とする請求項16に記載の量子デバイスの製造方法。
- 前記第2の量子構造体として量子リングを形成することを特徴とする請求項17に記載の量子デバイスの製造方法。
- 前記第1の量子構造体として量子リングを形成することを特徴とする請求項18に記載の量子デバイスの製造方法。
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GB2460666A (en) * | 2008-06-04 | 2009-12-09 | Sharp Kk | Exciton spin control in AlGaInN quantum dots |
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JPH1154715A (ja) * | 1997-08-06 | 1999-02-26 | Fujitsu Ltd | 半導体フォト・ホール・バーニング・メモリ |
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JP3517897B2 (ja) * | 1993-04-16 | 2004-04-12 | ソニー株式会社 | 量子演算素子およびその使用方法 |
JP3541425B2 (ja) * | 1994-04-21 | 2004-07-14 | ソニー株式会社 | 量子メモリおよびその動作方法 |
JP3672678B2 (ja) * | 1996-04-05 | 2005-07-20 | 富士通株式会社 | 量子半導体装置およびその製造方法 |
US6281519B1 (en) * | 1997-08-13 | 2001-08-28 | Fujitsu Limited | Quantum semiconductor memory device including quantum dots |
JP3656152B2 (ja) | 1998-08-19 | 2005-06-08 | 独立行政法人理化学研究所 | 量子コンピュータにおける量子ビット素子構造および量子相関ゲート素子構造 |
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US6768754B1 (en) * | 2000-09-13 | 2004-07-27 | National Research Council Of Canada | Quantum dot tunable external cavity lasers (QD-TEC lasers) |
EP1262911A1 (en) | 2001-05-30 | 2002-12-04 | Hitachi Europe Limited | Quantum computer |
JP4961650B2 (ja) * | 2001-09-18 | 2012-06-27 | 富士通株式会社 | 量子回路装置 |
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Title |
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US7880162B2 (en) | 2011-02-01 |
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WO2006097976A1 (ja) | 2006-09-21 |
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