JPWO2006070683A1 - スイッチング素子、スイッチング素子の製造方法、書き換え可能な論理集積回路、およびメモリ素子 - Google Patents
スイッチング素子、スイッチング素子の製造方法、書き換え可能な論理集積回路、およびメモリ素子 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 81
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000011810 insulating material Substances 0.000 claims description 2
- 210000001787 dendrite Anatomy 0.000 description 28
- 238000000034 method Methods 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- 229910052802 copper Inorganic materials 0.000 description 20
- 239000010949 copper Substances 0.000 description 20
- 210000004027 cell Anatomy 0.000 description 19
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 12
- 229910001431 copper ion Inorganic materials 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 7
- 239000005751 Copper oxide Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910000431 copper oxide Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000004380 ashing Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- VTJUKNSKBAOEHE-UHFFFAOYSA-N calixarene Chemical compound COC(=O)COC1=C(CC=2C(=C(CC=3C(=C(C4)C=C(C=3)C(C)(C)C)OCC(=O)OC)C=C(C=2)C(C)(C)C)OCC(=O)OC)C=C(C(C)(C)C)C=C1CC1=C(OCC(=O)OC)C4=CC(C(C)(C)C)=C1 VTJUKNSKBAOEHE-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Abstract
Description
13、14、31、32 第2電極
34、35 第3電極
40、42 イオン伝導層
(実施形態1)
本実施形態の2端子スイッチの構成について説明する。
(実施形態2)
本実施形態の3端子スイッチの構成について説明する。
(実施形態3)
本実施形態は、実施形態2のスイッチング素子をプログラマブルロジックに適用したものである。
(実施形態4)
本実施形態は、実施形態2のスイッチング素子をメモリ素子に適用したものである。
Claims (12)
- 金属イオンが伝導可能なイオン伝導層を備えたスイッチング素子であって、
前記イオン伝導層に接するように設けられた第1電極および第2電極と、
前記イオン伝導層に接して設けられ、前記金属イオンを供給可能な第3電極とを有し、
前記第1電極の前記イオン伝導層に接する面積が前記第2電極の該イオン伝導層に接する面積よりも小さいスイッチング素子。 - 前記第1電極と第2電極の間に設けられ、直径0.1μm以下の開口部が形成された絶縁層を有し、
前記第1電極は前記開口部を介して前記イオン伝導層と接する請求項1記載のスイッチング素子。 - 金属イオンが伝導可能なイオン伝導層を備えたスイッチング素子であって、
前記イオン伝導層に接するように設けられた絶縁層と、
前記絶縁層に接するように設けられた第1電極と、
前記イオン伝導層に接するように設けられた第2電極と、
前記イオン伝導層に接して設けられ、前記金属イオンを供給可能な第3電極とを有し、
前記第1電極の前記絶縁層に接する面積が前記第2電極の該イオン伝導層に接する面積よりも小さいスイッチング素子。 - 前記第1電極が前記絶縁層に接する部位と前記第2電極との間に前記金属イオンによる金属析出物が設けられた請求項3項記載のスイッチング素子。
- 金属イオンが伝導可能なイオン伝導層を備えたスイッチング素子であって、
前記イオン伝導層に接するように設けられた第1電極と、
前記イオン伝導層に接して設けられ、前記金属イオンを供給可能な第2電極と、
前記イオン伝導層と第1電極の間に設けられ、直径0.1μm以下の開口部が形成された絶縁層とを有し、
前記開口部を介して前記第1電極の前記イオン伝導層に接する面積が、前記第2電極の該イオン伝導層に接する面積よりも小さいスイッチング素子。 - 前記第1電極が前記イオン伝導層に接する部位と前記第2電極との間に前記金属イオンによる金属析出物が設けられた請求項1記載のスイッチング素子。
- 前記第1電極が前記イオン伝導層に接する部位と前記第2電極との間に前記金属イオンによる金属析出物が設けられた請求項2記載のスイッチング素子。
- 前記第1電極が前記イオン伝導層に接する部位と前記第2電極との間に前記金属イオンによる金属析出物が設けられた請求項5記載のスイッチング素子。
- 請求項1から8のいずれか1項記載のスイッチング素子をスイッチに用いた書き換え可能な論理集積回路。
- 請求項1から8のいずれか1項記載のスイッチング素子と、
前記スイッチング素子がオン状態およびオフ状態のいずれの状態であるかを読み出すためのトランジスタ素子と、
を有するメモリ素子。 - 第1電極および第2電極を有するスイッチング素子の製造方法であって、
絶縁材料上に金属イオンを供給可能な前記第2電極を形成する工程と、
前記第2電極を覆う、前記金属イオンを伝導するためのイオン伝導層を形成する工程と、
前記イオン伝導層上に第1絶縁層を形成する工程と、
開口を有する第2絶縁層を前記第1絶縁層上に形成する工程と、
前記開口を埋め込む前記第1電極を形成する工程と、
前記第2電極および前記第1電極の間に電圧を印加することで、該第1電極および該第2電極間の電流の通り道となる開口部を前記第1絶縁層に形成する工程と、
を有するスイッチング素子の製造方法。 - 前記第2電極および前記第1電極の間に電圧を印加する工程において、
該第2電極に対して該第1電極に負電圧を印加することで、前記開口部が形成された部位と前記第2電極との間に前記金属イオンによる金属析出物を形成する請求項11記載のスイッチング素子の製造方法。
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US7829875B2 (en) * | 2006-03-31 | 2010-11-09 | Sandisk 3D Llc | Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
US7824956B2 (en) | 2007-06-29 | 2010-11-02 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US8233308B2 (en) | 2007-06-29 | 2012-07-31 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
JP5212378B2 (ja) * | 2007-11-21 | 2013-06-19 | 日本電気株式会社 | 半導体装置のコンフィギュレーション方法 |
JP5783174B2 (ja) * | 2010-06-16 | 2015-09-24 | 日本電気株式会社 | 半導体装置及びその動作方法 |
US9548115B2 (en) * | 2012-03-16 | 2017-01-17 | Nec Corporation | Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element |
FR3003401B1 (fr) * | 2013-03-15 | 2016-12-09 | Altis Semiconductor Snc | Dispositif microelectronique a memoire programmable |
EP3391426B1 (en) * | 2015-12-14 | 2021-08-11 | Shih-Yuan Wang | Resistive random-access memory with protected switching layer |
KR101948638B1 (ko) * | 2017-03-15 | 2019-02-15 | 고려대학교 산학협력단 | 단일 나노 공극 구조를 이용한 산화물 기반 저항 스위칭 메모리 소자 및 그 제조 방법 |
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US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
DE69812425T2 (de) | 1997-12-04 | 2004-01-15 | Axon Technologies Corp | Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür |
US6635914B2 (en) * | 2000-09-08 | 2003-10-21 | Axon Technologies Corp. | Microelectronic programmable device and methods of forming and programming the same |
DE60034663D1 (de) | 1999-02-11 | 2007-06-14 | Univ Arizona | Programmierbare mikroelektronische struktur sowie verfahren zu ihrer herstellung und programmierung |
JP3593582B2 (ja) * | 2001-09-19 | 2004-11-24 | 彰 土井 | 銀イオン含有イオン伝導体の電界誘導黒化現象を利用した記憶素子 |
WO2003079463A2 (en) * | 2002-03-15 | 2003-09-25 | Axon Technologies Corporation | Programmable structure, an array including the structure, and methods of forming the same |
US7750332B2 (en) * | 2002-04-30 | 2010-07-06 | Japan Science And Technology Agency | Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device |
JP4608875B2 (ja) * | 2003-12-03 | 2011-01-12 | ソニー株式会社 | 記憶装置 |
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WO2006070683A1 (ja) | 2006-07-06 |
US7964867B2 (en) | 2011-06-21 |
JP5135797B2 (ja) | 2013-02-06 |
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