JPWO2006022160A1 - 有機電界発光素子 - Google Patents
有機電界発光素子 Download PDFInfo
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- H—ELECTRICITY
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- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
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- C09K2211/1003—Carbocyclic compounds
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
- C09K2211/1037—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom with sulfur
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
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- C09K2211/1092—Heterocyclic compounds characterised by ligands containing sulfur as the only heteroatom
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/18—Metal complexes
- C09K2211/185—Metal complexes of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/18—Metal complexes
- C09K2211/186—Metal complexes of the light metals other than alkali metals and alkaline earth metals, i.e. Be, Al or Mg
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
非特許文献1では、発光層のホスト材料にTAZ、1,3-ビス(N,N-t-ブチル-フェニル)-1,3,4-オキサゾール又はBCPを使用し、ゲスト材料にIr(ppy)3、電子輸送層にAlq3、正孔輸送層にHMTPDを使用することで燐光発光素子において3層構造で高効率発光を得ることが可能であり、特にTAZを用いた系で優れていると報告している。しかし、HMTPDはガラス転移温度(以下、Tgという)が約50℃であるため、結晶化し易く材料としての信頼性に欠ける。したがって、素子寿命が極端に短く、商業的応用は難しい上、駆動電圧が高いという問題点もある。
(式中、R1〜R8は各々独立に、水素原子、アルキル基、アラルキル基、アルケニル基、シアノ基、アルコキシ基、置換基を有していてもよい芳香族炭化水素基又は置換基を有していてもよい芳香族複素環基を示す)
また、上記の化合物以外に、正孔輸送層の材料として、ポリビニルカルバゾール、ポリビニルトリフェニルアミン、テトラフェニルベンジジンを含有するポリアリーレンエーテルサルホン等の高分子材料が挙げられる。
発光層5の膜厚は、通常10〜200nm、好ましくは20〜100nmである。正孔輸送層4と同様の方法にて薄膜形成される。
電子輸送層6は、正孔輸送層4と同様にして塗布法あるいは真空蒸着法により発光層5上に積層することにより形成される。通常は、真空蒸着法が用いられる。
陰極7の膜厚は通常、陽極2と同様である。低仕事関数金属からなる陰極を保護する目的で、この上に更に、仕事関数が高く大気に対して安定な金属層を積層することは素子の安定性を増す。この目的のために、アルミニウム、銀、銅、ニッケル、クロム、金、白金等の金属が使われる。
更に、陰極と電子輸送層の間にLiF 、MgF2、Li2O等の極薄絶縁膜(0.1〜5nm)を、電子注入層として挿入することも素子の効率を向上させる有効な方法である。
ガラス基板上に真空蒸着法にて、真空度4.0×10-4 Paで蒸着を行い、ビス(2−メチル-8-ヒドロキシキノリラート)アルミニウム(III)-μ-オキソ-ビス(2−メチル-8-ヒドロキシキノリラート)アルミニウム(III)(化合物1)、TAZ又はBAlqを蒸着速度1.0Å/秒にて100nmの厚さに形成した。これを大気中、室温で放置し、結晶化する時間を測定することにより、薄膜安定性に関する検討を行った。結果を表1に示す。
次に、正孔輸送層上に、発光層として化合物1とbtp2Ir(acac)とを異なる蒸着源から共蒸着し、47.5nmの厚さに形成した。この時、btp2Ir(acac)の濃度は7.0 %であった。次に、電子輸送層としてAlq3を蒸着速度3.0Å/秒にて30nmの厚さに形成した。
更に、電子輸送層上に、電子注入層とし酸化リチウム(Li2O)を蒸着速度0.1Å/秒にて1nmの厚さに形成した。最後に、電子注入層上に、電極としてアルミニウム(Al)を蒸着速度10Å/秒にて100nmの厚さに形成し、有機EL素子を作成した。
Claims (3)
- 基板上に、陽極と、正孔輸送層、発光層及び電子輸送層を含む有機層並びに陰極が積層され、発光層と陽極の間に正孔輸送層を有し、発光層と陰極の間に電子輸送層を有する有機電界発光素子であって、発光層が、ホスト材料として下記一般式(I)で表わされる化合物を、ゲスト材料としてルテニウム、ロジウム、パラジウム、銀、レニウム、オスミウム、イリジウム、白金及び金から選ばれる少なくとも一つの金属を含む有機金属錯体を含有することを特徴とする有機電界発光素子。
式中、R1〜R6は各々独立に、水素原子、アルキル基、アラルキル基、アルケニル基、シアノ基、アルコキシ基、置換基を有していてもよい芳香族炭化水素基又は置換基を有していてもよい芳香族複素環基を示す。 - 陽極と正孔輸送層の間に正孔注入層が配されていることを特徴とする請求項1に記載の有機電界発光素子。
- 陰極と電子輸送層の間に電子注入層が配されていることを特徴とする請求項1又は2に記載の有機電界発光素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006531783A JP4864708B2 (ja) | 2004-08-23 | 2005-08-15 | 有機電界発光素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004242160 | 2004-08-23 | ||
JP2004242160 | 2004-08-23 | ||
PCT/JP2005/014895 WO2006022160A1 (ja) | 2004-08-23 | 2005-08-15 | 有機電界発光素子 |
JP2006531783A JP4864708B2 (ja) | 2004-08-23 | 2005-08-15 | 有機電界発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006022160A1 true JPWO2006022160A1 (ja) | 2008-05-08 |
JP4864708B2 JP4864708B2 (ja) | 2012-02-01 |
Family
ID=35967375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006531783A Expired - Fee Related JP4864708B2 (ja) | 2004-08-23 | 2005-08-15 | 有機電界発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070285008A1 (ja) |
JP (1) | JP4864708B2 (ja) |
KR (1) | KR101201174B1 (ja) |
CN (1) | CN101010991A (ja) |
TW (1) | TW200614865A (ja) |
WO (1) | WO2006022160A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008277799A (ja) * | 2007-04-03 | 2008-11-13 | Fujikura Ltd | 有機エレクトロルミネッセンス素子及び光通信用モジュール |
EP3471164B1 (en) * | 2017-08-11 | 2023-03-29 | LG Chem, Ltd. | Organic electroluminescent element and manufacturing method therefor |
CN114621291B (zh) * | 2020-12-14 | 2024-04-16 | 广东阿格蕾雅光电材料有限公司 | 双核金属铂配合物及其应用 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0978058A (ja) * | 1995-09-08 | 1997-03-25 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JPH1197174A (ja) * | 1997-09-16 | 1999-04-09 | Mitsui Chem Inc | 有機電界発光素子 |
JP2000311787A (ja) * | 1999-02-22 | 2000-11-07 | Mitsui Chemicals Inc | 有機電界発光素子 |
JP2002043056A (ja) * | 2000-07-19 | 2002-02-08 | Canon Inc | 発光素子 |
JP2002216964A (ja) * | 2001-01-23 | 2002-08-02 | Mitsui Chemicals Inc | 有機電界発光素子 |
JP2002216963A (ja) * | 2001-01-16 | 2002-08-02 | Mitsui Chemicals Inc | 有機電界発光素子 |
JP2003007469A (ja) * | 2001-06-25 | 2003-01-10 | Canon Inc | 発光素子及び表示装置 |
WO2004046275A1 (ja) * | 2002-11-21 | 2004-06-03 | Semiconductor Energy Laboratory Co., Ltd | 電界発光素子および発光装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5151629A (en) * | 1991-08-01 | 1992-09-29 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (I) |
JPH06192653A (ja) * | 1992-12-24 | 1994-07-12 | Denki Kagaku Kogyo Kk | 発光材料及び有機電界発光素子 |
US6303238B1 (en) * | 1997-12-01 | 2001-10-16 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
JP3792036B2 (ja) * | 1998-01-13 | 2006-06-28 | 三井化学株式会社 | 有機電界発光素子 |
JP3092584B2 (ja) * | 1998-03-23 | 2000-09-25 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子 |
JP2001313178A (ja) * | 2000-04-28 | 2001-11-09 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス素子 |
KR100509603B1 (ko) | 2002-12-28 | 2005-08-22 | 삼성에스디아이 주식회사 | 적색 발광 화합물 및 이를 채용한 유기 전계 발광 소자 |
-
2005
- 2005-08-10 TW TW094127195A patent/TW200614865A/zh not_active IP Right Cessation
- 2005-08-15 WO PCT/JP2005/014895 patent/WO2006022160A1/ja active Application Filing
- 2005-08-15 KR KR1020077006289A patent/KR101201174B1/ko not_active IP Right Cessation
- 2005-08-15 US US11/660,673 patent/US20070285008A1/en not_active Abandoned
- 2005-08-15 CN CNA2005800278340A patent/CN101010991A/zh active Pending
- 2005-08-15 JP JP2006531783A patent/JP4864708B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0978058A (ja) * | 1995-09-08 | 1997-03-25 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
JPH1197174A (ja) * | 1997-09-16 | 1999-04-09 | Mitsui Chem Inc | 有機電界発光素子 |
JP2000311787A (ja) * | 1999-02-22 | 2000-11-07 | Mitsui Chemicals Inc | 有機電界発光素子 |
JP2002043056A (ja) * | 2000-07-19 | 2002-02-08 | Canon Inc | 発光素子 |
JP2002216963A (ja) * | 2001-01-16 | 2002-08-02 | Mitsui Chemicals Inc | 有機電界発光素子 |
JP2002216964A (ja) * | 2001-01-23 | 2002-08-02 | Mitsui Chemicals Inc | 有機電界発光素子 |
JP2003007469A (ja) * | 2001-06-25 | 2003-01-10 | Canon Inc | 発光素子及び表示装置 |
WO2004046275A1 (ja) * | 2002-11-21 | 2004-06-03 | Semiconductor Energy Laboratory Co., Ltd | 電界発光素子および発光装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI376983B (ja) | 2012-11-11 |
JP4864708B2 (ja) | 2012-02-01 |
KR20070053281A (ko) | 2007-05-23 |
WO2006022160A1 (ja) | 2006-03-02 |
CN101010991A (zh) | 2007-08-01 |
KR101201174B1 (ko) | 2012-11-13 |
TW200614865A (en) | 2006-05-01 |
US20070285008A1 (en) | 2007-12-13 |
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