JPWO2004051758A1 - 半導体発光素子及びその製造方法 - Google Patents

半導体発光素子及びその製造方法 Download PDF

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Publication number
JPWO2004051758A1
JPWO2004051758A1 JP2004556835A JP2004556835A JPWO2004051758A1 JP WO2004051758 A1 JPWO2004051758 A1 JP WO2004051758A1 JP 2004556835 A JP2004556835 A JP 2004556835A JP 2004556835 A JP2004556835 A JP 2004556835A JP WO2004051758 A1 JPWO2004051758 A1 JP WO2004051758A1
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JP
Japan
Prior art keywords
layer
semiconductor
light emitting
main surface
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004556835A
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English (en)
Japanese (ja)
Inventor
仁 室伏
仁 室伏
四郎 武田
四郎 武田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Publication of JPWO2004051758A1 publication Critical patent/JPWO2004051758A1/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2004556835A 2002-11-29 2003-11-21 半導体発光素子及びその製造方法 Pending JPWO2004051758A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002348416 2002-11-29
JP2002348416 2002-11-29
PCT/JP2003/014890 WO2004051758A1 (ja) 2002-11-29 2003-11-21 半導体発光素子及びその製造方法

Publications (1)

Publication Number Publication Date
JPWO2004051758A1 true JPWO2004051758A1 (ja) 2006-04-06

Family

ID=32462916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004556835A Pending JPWO2004051758A1 (ja) 2002-11-29 2003-11-21 半導体発光素子及びその製造方法

Country Status (4)

Country Link
JP (1) JPWO2004051758A1 (zh)
CN (1) CN100521261C (zh)
TW (1) TWI230472B (zh)
WO (1) WO2004051758A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100420044C (zh) * 2004-09-29 2008-09-17 晶元光电股份有限公司 发光二极管及其制作方法
KR100657941B1 (ko) * 2004-12-31 2006-12-14 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
JP4935136B2 (ja) * 2006-03-22 2012-05-23 パナソニック株式会社 発光素子
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
CN100386899C (zh) * 2006-05-26 2008-05-07 北京工业大学 高效高亮全反射发光二极管及制作方法
JP5346443B2 (ja) 2007-04-16 2013-11-20 ローム株式会社 半導体発光素子およびその製造方法
JP4770785B2 (ja) * 2007-04-25 2011-09-14 日立電線株式会社 発光ダイオード
KR100992728B1 (ko) * 2008-10-20 2010-11-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101007113B1 (ko) * 2008-11-25 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWI412161B (zh) * 2009-11-06 2013-10-11 Semileds Optoelectronics Co 發光二極體裝置
CN102280552B (zh) * 2010-06-14 2015-06-03 鸿富锦精密工业（深圳）有限公司 发光二极管晶粒及其制作方法
TWI437738B (zh) 2010-10-06 2014-05-11 Huga Optotech Inc 半導體發光元件
WO2021059485A1 (ja) * 2019-09-27 2021-04-01 三菱電機株式会社 光半導体装置およびその製造方法
CN112652689B (zh) * 2020-12-30 2022-09-02 深圳第三代半导体研究院 一种发光二极管及其制造方法
CN112614921A (zh) * 2020-12-31 2021-04-06 深圳第三代半导体研究院 一种发光二极管及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940863A (zh) * 1972-08-25 1974-04-17
JPH05251739A (ja) * 1992-03-06 1993-09-28 Toshiba Corp 半導体発光デバイス
JP4050444B2 (ja) * 2000-05-30 2008-02-20 信越半導体株式会社 発光素子及びその製造方法
JP2002217450A (ja) * 2001-01-22 2002-08-02 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP2002261044A (ja) * 2001-03-06 2002-09-13 Sony Corp 半導体装置の製造方法および半導体装置

Also Published As

Publication number Publication date
WO2004051758A1 (ja) 2004-06-17
TWI230472B (en) 2005-04-01
CN1717812A (zh) 2006-01-04
CN100521261C (zh) 2009-07-29
TW200425537A (en) 2004-11-16

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