JPWO2003094235A1 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
- Publication number
- JPWO2003094235A1 JPWO2003094235A1 JP2004502355A JP2004502355A JPWO2003094235A1 JP WO2003094235 A1 JPWO2003094235 A1 JP WO2003094235A1 JP 2004502355 A JP2004502355 A JP 2004502355A JP 2004502355 A JP2004502355 A JP 2004502355A JP WO2003094235 A1 JPWO2003094235 A1 JP WO2003094235A1
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- substrate bias
- voltage
- bias voltage
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims abstract description 225
- 230000007423 decrease Effects 0.000 claims abstract description 10
- 238000009966 trimming Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 22
- 230000010355 oscillation Effects 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 229910021332 silicide Inorganic materials 0.000 description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 11
- 238000007689 inspection Methods 0.000 description 8
- 238000012544 monitoring process Methods 0.000 description 8
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 101001116668 Homo sapiens Prefoldin subunit 3 Proteins 0.000 description 6
- 102100024884 Prefoldin subunit 3 Human genes 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229920001690 polydopamine Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2002/004323 WO2003094235A1 (fr) | 2002-04-30 | 2002-04-30 | Dispositif de circuit integre a semiconducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2003094235A1 true JPWO2003094235A1 (ja) | 2005-09-08 |
Family
ID=29287940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004502355A Pending JPWO2003094235A1 (ja) | 2002-04-30 | 2002-04-30 | 半導体集積回路装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2003094235A1 (fr) |
| TW (1) | TW595007B (fr) |
| WO (1) | WO2003094235A1 (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4744807B2 (ja) * | 2004-01-06 | 2011-08-10 | パナソニック株式会社 | 半導体集積回路装置 |
| JP4337709B2 (ja) | 2004-11-01 | 2009-09-30 | 日本電気株式会社 | 半導体集積回路装置 |
| JP2007281934A (ja) * | 2006-04-07 | 2007-10-25 | Nec Electronics Corp | 半導体リレー |
| WO2008000858A1 (fr) * | 2006-06-30 | 2008-01-03 | Intel Corporation | Estimation de la puissance de fuites |
| JP2008085571A (ja) * | 2006-09-27 | 2008-04-10 | Nec Electronics Corp | 半導体集積回路 |
| WO2008047416A1 (fr) | 2006-10-18 | 2008-04-24 | Spansion Llc | Circuit de détection de tension |
| JP5251190B2 (ja) * | 2008-03-19 | 2013-07-31 | 富士通株式会社 | 半導体装置 |
| JP2009295225A (ja) * | 2008-06-04 | 2009-12-17 | Toppan Printing Co Ltd | ディレイパルス発生回路、および半導体記憶装置 |
| WO2010146640A1 (fr) * | 2009-06-15 | 2010-12-23 | パナソニック株式会社 | Dispositif de circuit intégré à semi-conducteurs et équipement électrique |
| KR101222311B1 (ko) * | 2010-06-14 | 2013-01-15 | 로베르트 보쉬 게엠베하 | 이차 전지 |
| KR101116501B1 (ko) | 2010-05-07 | 2012-02-24 | 에스비리모티브 주식회사 | 관통 및 압괴 안전성이 향상된 이차 전지 |
| JP2015220632A (ja) * | 2014-05-19 | 2015-12-07 | ソニー株式会社 | 半導体装置及びｍｏｓトランジスタの制御方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5989031A (ja) * | 1982-11-12 | 1984-05-23 | Toshiba Corp | 基板バイアス発生回路 |
| JPH02199863A (ja) * | 1989-01-30 | 1990-08-08 | Nec Corp | 半導体装置 |
| JP3732914B2 (ja) * | 1997-02-28 | 2006-01-11 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP2000223586A (ja) * | 1999-02-02 | 2000-08-11 | Oki Micro Design Co Ltd | 半導体集積回路 |
| JP4632483B2 (ja) * | 2000-05-19 | 2011-02-16 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
-
2002
- 2002-04-30 JP JP2004502355A patent/JPWO2003094235A1/ja active Pending
- 2002-04-30 WO PCT/JP2002/004323 patent/WO2003094235A1/fr active Application Filing
- 2002-07-19 TW TW091116172A patent/TW595007B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW595007B (en) | 2004-06-21 |
| WO2003094235A1 (fr) | 2003-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4820571B2 (ja) | 半導体装置 | |
| US6990031B2 (en) | Semiconductor memory device control method and semiconductor memory device | |
| US7180794B2 (en) | Oscillating circuit, booster circuit, nonvolatile memory device, and semiconductor device | |
| US9171856B2 (en) | Bias generator for flash memory and control method thereof | |
| US7274247B2 (en) | System, method and program product for well-bias set point adjustment | |
| US7436206B2 (en) | Semiconductor integrated circuit | |
| US7492206B2 (en) | Level shifter with reduced leakage current and block driver for nonvolatile semiconductor memory device | |
| CN105719686B (zh) | 半导体集成电路装置以及可穿戴装置 | |
| US7099223B2 (en) | Semiconductor memory device | |
| US8471537B2 (en) | Low power high voltage regulator for non-volatile memory device | |
| JPWO2003094235A1 (ja) | 半導体集積回路装置 | |
| JP2000155617A (ja) | 内部電圧発生回路 | |
| US7782123B2 (en) | Semiconductor integrated circuit | |
| US20030201820A1 (en) | Bias voltage generating circuit and semiconductor integrated circuit device | |
| JP2002373942A (ja) | 半導体集積回路 | |
| US7714637B2 (en) | Negative potential discharge circuit and method thereof | |
| KR100990144B1 (ko) | 반도체 소자 및 그의 동작방법 | |
| US20100109723A1 (en) | Power-up signal generating circuit and integrated circuit using the same | |
| US8553487B2 (en) | Internal power supply circuit, semiconductor device, and manufacturing method of semiconductor device | |
| JP2018098717A (ja) | 電圧監視回路および半導体装置 | |
| US6388924B1 (en) | Semiconductor integrated device and electronic apparatus mounted with the device | |
| TWI408691B (zh) | 內部電壓產生器 | |
| US6472924B1 (en) | Integrated semiconductor circuit having analog and logic circuits | |
| US8120971B2 (en) | Internal source voltage generating circuit of semiconductor memory device | |
| US20120306549A1 (en) | Semiconductor integrated circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081112 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090109 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090225 |