JPS6489360A - Semiconductor storage device and manufacture thereof - Google Patents

Semiconductor storage device and manufacture thereof

Info

Publication number
JPS6489360A
JPS6489360A JP62245488A JP24548887A JPS6489360A JP S6489360 A JPS6489360 A JP S6489360A JP 62245488 A JP62245488 A JP 62245488A JP 24548887 A JP24548887 A JP 24548887A JP S6489360 A JPS6489360 A JP S6489360A
Authority
JP
Japan
Prior art keywords
layer
groove
oxide film
type impurity
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62245488A
Other languages
Japanese (ja)
Other versions
JPH07105476B2 (en
Inventor
Hirosuke Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62245488A priority Critical patent/JPH07105476B2/en
Publication of JPS6489360A publication Critical patent/JPS6489360A/en
Publication of JPH07105476B2 publication Critical patent/JPH07105476B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Abstract

PURPOSE:To perform a high integration by forming a groove on a field region, employing it as a capacitor, and connecting the source region of a transistor to the charge storage region of a capacitor. CONSTITUTION:An N-type impurity layer 10 and a field oxide film 2 are sequentially formed on a P-type semiconductor substrate 1. The film 2 is penetrated through a field region, and a groove 3 of the state that the substrate 1 is dug is formed. An N-type impurity layer 4 is formed only on the inner wall of the groove 3, and a first gate oxide film 5 is then formed. Then, after a polysilicon 6 is patterned, a second gate oxide film 7 is formed, and a polysilicon 8 is patterned. N-type impurity layers 9a, 9b are formed by ion implanting. An insulating film 12 is formed, a hole is opened on the layer 9a, a polysilicide (wiring layer) 11 is formed, connected to the layer 9b and wired.
JP62245488A 1987-09-29 1987-09-29 Semiconductor memory device Expired - Fee Related JPH07105476B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62245488A JPH07105476B2 (en) 1987-09-29 1987-09-29 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62245488A JPH07105476B2 (en) 1987-09-29 1987-09-29 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS6489360A true JPS6489360A (en) 1989-04-03
JPH07105476B2 JPH07105476B2 (en) 1995-11-13

Family

ID=17134406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62245488A Expired - Fee Related JPH07105476B2 (en) 1987-09-29 1987-09-29 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPH07105476B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184555A (en) * 1983-04-02 1984-10-19 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit device and manufacture thereof
JPS61179568A (en) * 1984-12-29 1986-08-12 Fujitsu Ltd Manufacture of semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184555A (en) * 1983-04-02 1984-10-19 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit device and manufacture thereof
JPS61179568A (en) * 1984-12-29 1986-08-12 Fujitsu Ltd Manufacture of semiconductor memory device

Also Published As

Publication number Publication date
JPH07105476B2 (en) 1995-11-13

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees