JPS648663A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS648663A
JPS648663A JP62164313A JP16431387A JPS648663A JP S648663 A JPS648663 A JP S648663A JP 62164313 A JP62164313 A JP 62164313A JP 16431387 A JP16431387 A JP 16431387A JP S648663 A JPS648663 A JP S648663A
Authority
JP
Japan
Prior art keywords
type impurity
layer
electron
impurity diffused
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164313A
Other languages
Japanese (ja)
Inventor
Masatoshi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62164313A priority Critical patent/JPS648663A/en
Publication of JPS648663A publication Critical patent/JPS648663A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To reduce the quantity of electrons to be collected in an N-type impurity diffused layer and to stabilize writing, storing and reading data (potentials) by providing an N-type impurity diffused layer in which an electron absorption layer, such as a positive bias is applied to a deeper section than N-type impurity diffused layers of a transistor and a capacitor separately from the N-type diffused layers. CONSTITUTION:An electron absorption layer 11 in which an N-type impurity is diffused is provided in a semiconductor substrate 6, and a positive bias is applied to the layer 11. Thus, parts of electrons of electron-hole pairs generated by irradiating the substrate 6 with an alpha-ray are collected by an electric field to reduce the ratio of the electrons to be collected by N-type impurity diffused layers of a transistor and a capacitor. The holes of the electron-hole pairs generated by radiating the substrate 6 with an alpha-ray are absorbed to a P-type impurity diffused layer 5 to which a negative bias is applied, and neutralized.
JP62164313A 1987-06-30 1987-06-30 Semiconductor device Pending JPS648663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62164313A JPS648663A (en) 1987-06-30 1987-06-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164313A JPS648663A (en) 1987-06-30 1987-06-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS648663A true JPS648663A (en) 1989-01-12

Family

ID=15790770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164313A Pending JPS648663A (en) 1987-06-30 1987-06-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS648663A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003531362A (en) * 2000-04-18 2003-10-21 グラディポア・リミテッド Electrophoretic separation and processing of samples
USRE39393E1 (en) 1990-11-30 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Device for reading an image having a common semiconductor layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE39393E1 (en) 1990-11-30 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Device for reading an image having a common semiconductor layer
JP2003531362A (en) * 2000-04-18 2003-10-21 グラディポア・リミテッド Electrophoretic separation and processing of samples

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