JPS6484684A - Semiconductor laser and the preparation thereof - Google Patents

Semiconductor laser and the preparation thereof

Info

Publication number
JPS6484684A
JPS6484684A JP24083487A JP24083487A JPS6484684A JP S6484684 A JPS6484684 A JP S6484684A JP 24083487 A JP24083487 A JP 24083487A JP 24083487 A JP24083487 A JP 24083487A JP S6484684 A JPS6484684 A JP S6484684A
Authority
JP
Japan
Prior art keywords
layer
composition
active layer
same composition
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24083487A
Other languages
Japanese (ja)
Inventor
Masayuki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24083487A priority Critical patent/JPS6484684A/en
Publication of JPS6484684A publication Critical patent/JPS6484684A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable the composition of an active layer to be detected whether it is different from the essentially desired composition or not, by empolying a series of processes in which the layer, which has the same composition as that of the active layer and is thicker than that thereof, is formed on a double hetero junction, and the X-ray diffraction of the layer is then analyzed. CONSTITUTION:A double hetero junction structure section consisting of a buffer layer 102, a clad layer 103, an active layer 104 and a clad layer 105 is formed on a substrate 101, a current-carrying layer 106 and a cap layer 107 are then in turn formed on the clad layer 105. Subsequently, a same composition layer 108, which has the same composition as that of the active layer 104 and is thicker than that thereof, is grown under the same growth conditions as that of the active layer 104. After the growth being completed, the X-ray diffraction is performed about the same composition layer 108 to evaluate the degree of lattice mismatching, i.e. the composition thereof. Since the composition of the layer 108 represents the same composition as that of the active layer 104, the difference of the composition and the like resulting from the abnormal operation of a film grown system and the like can be found based on the obtained evaluation.
JP24083487A 1987-09-28 1987-09-28 Semiconductor laser and the preparation thereof Pending JPS6484684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24083487A JPS6484684A (en) 1987-09-28 1987-09-28 Semiconductor laser and the preparation thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24083487A JPS6484684A (en) 1987-09-28 1987-09-28 Semiconductor laser and the preparation thereof

Publications (1)

Publication Number Publication Date
JPS6484684A true JPS6484684A (en) 1989-03-29

Family

ID=17065389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24083487A Pending JPS6484684A (en) 1987-09-28 1987-09-28 Semiconductor laser and the preparation thereof

Country Status (1)

Country Link
JP (1) JPS6484684A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260636A (en) * 1989-03-31 1990-10-23 Sanyo Electric Co Ltd Etching of algainp crystal
JP2005091311A (en) * 2003-09-19 2005-04-07 Sharp Corp Method of measuring lattice constant
JP2020141014A (en) * 2019-02-27 2020-09-03 株式会社東芝 Wafer for semiconductor laser and semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260636A (en) * 1989-03-31 1990-10-23 Sanyo Electric Co Ltd Etching of algainp crystal
JP2005091311A (en) * 2003-09-19 2005-04-07 Sharp Corp Method of measuring lattice constant
JP2020141014A (en) * 2019-02-27 2020-09-03 株式会社東芝 Wafer for semiconductor laser and semiconductor laser

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