CA2099385A1 - Algaas native oxide - Google Patents

Algaas native oxide

Info

Publication number
CA2099385A1
CA2099385A1 CA002099385A CA2099385A CA2099385A1 CA 2099385 A1 CA2099385 A1 CA 2099385A1 CA 002099385 A CA002099385 A CA 002099385A CA 2099385 A CA2099385 A CA 2099385A CA 2099385 A1 CA2099385 A1 CA 2099385A1
Authority
CA
Canada
Prior art keywords
native oxide
semiconductor material
bearing group
aluminum
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002099385A
Other languages
French (fr)
Other versions
CA2099385C (en
Inventor
Nick Holonyak Jr.
John M. Dallesasse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois
Original Assignee
Nick Holonyak Jr.
John M. Dallesasse
The Board Of Trustees Of The University Of Illinois
Research Corporation Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nick Holonyak Jr., John M. Dallesasse, The Board Of Trustees Of The University Of Illinois, Research Corporation Technologies, Inc. filed Critical Nick Holonyak Jr.
Publication of CA2099385A1 publication Critical patent/CA2099385A1/en
Application granted granted Critical
Publication of CA2099385C publication Critical patent/CA2099385C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H01S5/2215—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides using native oxidation of semiconductor layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Abstract

A method of forming a native oxide from an aluminum-bearing Group 111-V
semiconductor material is provided. The method entails exposing the aluminium-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 °C to convert at least a portion of said aluminum-bearing material to a native oxide character-ized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said alumi-num-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
CA002099385A 1990-12-31 1991-06-24 Algaas native oxide Expired - Lifetime CA2099385C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US63631390A 1990-12-31 1990-12-31
US636,313 1990-12-31
PCT/US1991/004512 WO1992012536A1 (en) 1990-12-31 1991-06-24 AlGaAs NATIVE OXIDE

Publications (2)

Publication Number Publication Date
CA2099385A1 true CA2099385A1 (en) 1992-07-01
CA2099385C CA2099385C (en) 2001-10-16

Family

ID=24551353

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002099385A Expired - Lifetime CA2099385C (en) 1990-12-31 1991-06-24 Algaas native oxide

Country Status (5)

Country Link
JP (1) JP3097863B2 (en)
AU (1) AU8438291A (en)
CA (1) CA2099385C (en)
IE (1) IE912194A1 (en)
WO (1) WO1992012536A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5400354A (en) * 1994-02-08 1995-03-21 Ludowise; Michael Laminated upper cladding structure for a light-emitting device
US6238348B1 (en) 1997-07-22 2001-05-29 Scimed Life Systems, Inc. Miniature spectrometer system and method
EP2392030B1 (en) 2009-01-28 2020-04-15 Microlink Devices, Inc. Method for fabricating a high efficiency group iii-v compound semiconductor solar cell with oxidized window layer
GB201012236D0 (en) 2010-07-21 2010-09-08 Qinetiq Ltd Method of fabrication of semiconductor device
JP2017050316A (en) 2015-08-31 2017-03-09 富士ゼロックス株式会社 Manufacturing method for light-emitting element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275181A (en) * 1975-12-13 1977-06-23 Sony Corp Formation of oxide film
US4172906A (en) * 1977-05-11 1979-10-30 Rockwell International Corporation Method for passivating III-V compound semiconductors
US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices
JPH0797567B2 (en) * 1987-06-24 1995-10-18 日本電気株式会社 Method of forming thin film

Also Published As

Publication number Publication date
AU8438291A (en) 1992-08-17
IE912194A1 (en) 1992-07-01
WO1992012536A1 (en) 1992-07-23
JP3097863B2 (en) 2000-10-10
JPH06503919A (en) 1994-04-28
CA2099385C (en) 2001-10-16

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