JPS6482668A - Manufacture of bipolar transistor - Google Patents
Manufacture of bipolar transistorInfo
- Publication number
- JPS6482668A JPS6482668A JP62241413A JP24141387A JPS6482668A JP S6482668 A JPS6482668 A JP S6482668A JP 62241413 A JP62241413 A JP 62241413A JP 24141387 A JP24141387 A JP 24141387A JP S6482668 A JPS6482668 A JP S6482668A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- film
- forming region
- polycrystalline silicon
- emitter forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62241413A JPS6482668A (en) | 1987-09-25 | 1987-09-25 | Manufacture of bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62241413A JPS6482668A (en) | 1987-09-25 | 1987-09-25 | Manufacture of bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6482668A true JPS6482668A (en) | 1989-03-28 |
| JPH0477459B2 JPH0477459B2 (enrdf_load_stackoverflow) | 1992-12-08 |
Family
ID=17073920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62241413A Granted JPS6482668A (en) | 1987-09-25 | 1987-09-25 | Manufacture of bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6482668A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5244533A (en) * | 1991-01-07 | 1993-09-14 | Kabushiki Kaisha Toshiba | Method of manufacturing bipolar transistor operated at high speed |
| US5294558A (en) * | 1993-06-01 | 1994-03-15 | International Business Machines Corporation | Method of making double-self-aligned bipolar transistor structure |
| JP2005514786A (ja) * | 2001-12-31 | 2005-05-19 | ジェネラル・セミコンダクター・インコーポレーテッド | 迅速な拡散によって形成されるドープカラムを含む電圧維持領域を有する高電圧電力ｍｏｓｆｅｔを製造する方法 |
-
1987
- 1987-09-25 JP JP62241413A patent/JPS6482668A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5244533A (en) * | 1991-01-07 | 1993-09-14 | Kabushiki Kaisha Toshiba | Method of manufacturing bipolar transistor operated at high speed |
| US5294558A (en) * | 1993-06-01 | 1994-03-15 | International Business Machines Corporation | Method of making double-self-aligned bipolar transistor structure |
| JP2005514786A (ja) * | 2001-12-31 | 2005-05-19 | ジェネラル・セミコンダクター・インコーポレーテッド | 迅速な拡散によって形成されるドープカラムを含む電圧維持領域を有する高電圧電力ｍｏｓｆｅｔを製造する方法 |
| JP4833517B2 (ja) * | 2001-12-31 | 2011-12-07 | ジェネラル・セミコンダクター・インコーポレーテッド | 迅速な拡散によって形成されるドープカラムを含む電圧維持領域を有する高電圧電力ｍｏｓｆｅｔを製造する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0477459B2 (enrdf_load_stackoverflow) | 1992-12-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1393123A (en) | Semiconductor device manufacture | |
| GB1484834A (en) | Manufacture of complementary metal oxide semiconductor devices | |
| JPS5467778A (en) | Production of semiconductor device | |
| JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
| GB1332931A (en) | Methods of manufacturing a semiconductor device | |
| JPS6482668A (en) | Manufacture of bipolar transistor | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS57134956A (en) | Manufacture of semiconductor integrated circuit | |
| JPS6476756A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS6415973A (en) | Semiconductor device and manufacture thereof | |
| JPS5586152A (en) | Manufacture of semiconductor device | |
| JPS642361A (en) | Manufacture of semiconductor device | |
| JPS5624922A (en) | Manufacture of semiconductor device | |
| JPS6489364A (en) | Manufacture of bipolar semiconductor integrated circuit device | |
| JPS57199236A (en) | Manufacture of oxide film isolation semiconductor device | |
| JPS57143841A (en) | Insulation separating composition | |
| JPS6482560A (en) | Lateral bipolar transistor | |
| JPS5615077A (en) | Manufacture of semiconductor device | |
| JPS6431460A (en) | Manufacture of bipolar transistor | |
| JPS6415974A (en) | Semiconductor device | |
| JPS5595356A (en) | Semiconductor device | |
| JPS5698861A (en) | Semiconductor device | |
| JPS6490554A (en) | Manufacture of semiconductor device | |
| JPS57133673A (en) | Semiconductor device | |
| JPS57143862A (en) | Manufacture of semiconductor integrated circuit |