JPS647659A - Photoelectric converter - Google Patents
Photoelectric converterInfo
- Publication number
- JPS647659A JPS647659A JP62162583A JP16258387A JPS647659A JP S647659 A JPS647659 A JP S647659A JP 62162583 A JP62162583 A JP 62162583A JP 16258387 A JP16258387 A JP 16258387A JP S647659 A JPS647659 A JP S647659A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- insulating layer
- nucleation
- contact
- brought
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To obtain a photoelectric converter, which has small dark currents and large photocurrents and is operated stably and optical response of which is improved, by forming a photoconductive semiconductor layer consisting of a single crystal onto an insulating layer and shaping the photoconductive semiconductor layer by alternately laminating at least two kinds of deposit films having different optical band gaps. CONSTITUTION:A photoelectric conversion section is composed of an insulating layer 9, a photocoductive semiconductor layer 12 shaped brought into contact with the insulating layer 9, first and second electrodes 14-1, 14-2 formed brought into contact with the photoconductive semiconductor layer 12, and a third electrode 15 shaped brought into contact with the insulating layer 9. The photoconductive semiconductor layer 12 in such a photoelectric converter is formed in structure, which consists of a semiconductor single crystal, which is shaped in such a manner that crystal formation treatment is executed to a base body having a free surface, on which a non-nucleation surface having small nucleation density and a nucleation surface 10 having a sufficiently small area for crystal growth only from a single nucleus and having nucleation density larger than that of the non-nucleation surface are arranged adjacently, and it is grown from the singe nucleus and in which at least two kinds of deposit films 12a, 12b having different optical band gaps are laminated alternately.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162583A JP2601475B2 (en) | 1987-06-30 | 1987-06-30 | Method for manufacturing photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162583A JP2601475B2 (en) | 1987-06-30 | 1987-06-30 | Method for manufacturing photoelectric conversion device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS647659A true JPS647659A (en) | 1989-01-11 |
JP2601475B2 JP2601475B2 (en) | 1997-04-16 |
Family
ID=15757349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62162583A Expired - Fee Related JP2601475B2 (en) | 1987-06-30 | 1987-06-30 | Method for manufacturing photoelectric conversion device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2601475B2 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5918196A (en) * | 1982-07-21 | 1984-01-30 | Hitachi Ltd | Preparation of thin film of single crystal |
JPS6042989A (en) * | 1983-08-18 | 1985-03-07 | Mitsubishi Electric Corp | Solid-state image pickup device |
JPS617663A (en) * | 1984-06-18 | 1986-01-14 | ゼロツクス コーポレーシヨン | Depletion type thin film semiconductor photodetector |
JPS617670A (en) * | 1984-06-22 | 1986-01-14 | Ricoh Co Ltd | Photoelectric conversion film |
-
1987
- 1987-06-30 JP JP62162583A patent/JP2601475B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5918196A (en) * | 1982-07-21 | 1984-01-30 | Hitachi Ltd | Preparation of thin film of single crystal |
JPS6042989A (en) * | 1983-08-18 | 1985-03-07 | Mitsubishi Electric Corp | Solid-state image pickup device |
JPS617663A (en) * | 1984-06-18 | 1986-01-14 | ゼロツクス コーポレーシヨン | Depletion type thin film semiconductor photodetector |
JPS617670A (en) * | 1984-06-22 | 1986-01-14 | Ricoh Co Ltd | Photoelectric conversion film |
Also Published As
Publication number | Publication date |
---|---|
JP2601475B2 (en) | 1997-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |