JPS647513A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS647513A JPS647513A JP16192687A JP16192687A JPS647513A JP S647513 A JPS647513 A JP S647513A JP 16192687 A JP16192687 A JP 16192687A JP 16192687 A JP16192687 A JP 16192687A JP S647513 A JPS647513 A JP S647513A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulator
- cap layer
- semiconductor layer
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To make it possible to reliably distinguish a cap layer from an insulating layer and to remove the former after a semiconductor layer has been recrystallized by a method wherein a nitrogen-containing layer is formed on the surface of the insulator other than the region on which the semiconductor layer is formed, and the semiconductor layer is fused and recrystallized after the cap layer has been formed. CONSTITUTION:When a cap layer 15 is formed covering the semiconductor layer 12 selectively formed on an insulator 11, a nitrogen-containing layer 14 is formed in advance on the region other than the part where the semiconductor layer 12 of the insulator 11 is formed. Accordingly, when the cap layer 15 is removed, namely, when the cap layer is etched after the semiconductor layer 12 has been fused and recrystallized, the etching operation is stopped or the efficiency of etching is lowered when the etching reaches the interface of the insulator 11 and the cap layer 15, namely, the nitrogen-containing layer 14 by the presence of the nitrogen-containing layer 14 on the interface of the insulator 11 and the cap layer 15 even when the cap layer 15 and the insulator 11 have the same material of SiO2. By stopping the etching work at the above-mentioned point of time, the whole thickness of the cap layer only can surely be removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62161926A JP2605286B2 (en) | 1987-06-29 | 1987-06-29 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62161926A JP2605286B2 (en) | 1987-06-29 | 1987-06-29 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS647513A true JPS647513A (en) | 1989-01-11 |
| JP2605286B2 JP2605286B2 (en) | 1997-04-30 |
Family
ID=15744662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62161926A Expired - Fee Related JP2605286B2 (en) | 1987-06-29 | 1987-06-29 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2605286B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60154548A (en) * | 1984-01-24 | 1985-08-14 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-06-29 JP JP62161926A patent/JP2605286B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60154548A (en) * | 1984-01-24 | 1985-08-14 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2605286B2 (en) | 1997-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |