JPS6473652A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6473652A
JPS6473652A JP23035687A JP23035687A JPS6473652A JP S6473652 A JPS6473652 A JP S6473652A JP 23035687 A JP23035687 A JP 23035687A JP 23035687 A JP23035687 A JP 23035687A JP S6473652 A JPS6473652 A JP S6473652A
Authority
JP
Japan
Prior art keywords
hydroxide
oxide
less
epoxy resin
100ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23035687A
Other languages
Japanese (ja)
Other versions
JP2558293B2 (en
Inventor
Tsutomu Nishioka
Tatsushi Ito
Minoru Nakao
Fujio Kitamura
Kazuo Iko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP62230356A priority Critical patent/JP2558293B2/en
Publication of JPS6473652A publication Critical patent/JPS6473652A/en
Application granted granted Critical
Publication of JP2558293B2 publication Critical patent/JP2558293B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To retain excellent reliability even when a semiconductor is left in a high-temperature atmosphere for a long time by a method wherein the semiconductor device is sealed by using a specific epoxy resin, a specific phenol resin and at least one compound selected from a group composed of a hydroxide of Bi, an oxide of Bi, a hydroxide of Al and an oxide of Al. CONSTITUTION:An epoxy resin composition is obtained by using a specific epoxy resin, a specific phenol resin and at least one compound selected from a group composed of a hydroxide of Bi, an oxide of Bi, a hydroxide of Al and an oxide of Al. For the epoxy resin, its content of an organic acid is set to be 100ppm or less, its total amount of chlorine is set to be 100ppm or less and its total amount of sodium is set to be 20ppm or less. For the phenol resin, its content of the organic acid is set to be 100ppm or less and its total amount of chlorine is set to be 10ppm or less. In addition, at least one compound selected from the group composed of the hydroxide of Al or Bi and the oxide of Al or Bi is contained. If at least one of the epoxy resin and the phenol resin reacts with an organopolysiloxane represented by a general formula, a stress is reduced and resistance to a temperature is improved.
JP62230356A 1987-09-14 1987-09-14 Semiconductor device Expired - Lifetime JP2558293B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62230356A JP2558293B2 (en) 1987-09-14 1987-09-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62230356A JP2558293B2 (en) 1987-09-14 1987-09-14 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6473652A true JPS6473652A (en) 1989-03-17
JP2558293B2 JP2558293B2 (en) 1996-11-27

Family

ID=16906579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230356A Expired - Lifetime JP2558293B2 (en) 1987-09-14 1987-09-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2558293B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005519147A (en) * 2002-02-28 2005-06-30 シーメンス　アクチエンゲゼルシヤフト Low corrosive epoxy resin and manufacturing method therefor
WO2008007730A1 (en) 2006-07-12 2008-01-17 Unisantis Electronics (Japan) Ltd. Nonvolatile semiconductor memory and its drive method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5978380B1 (en) * 2015-12-25 2016-08-24 太陽インキ製造株式会社 Sealant for semiconductor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS572329A (en) * 1980-06-05 1982-01-07 Toshiba Corp Epoxy resin type composition and semiconductor device of resin sealing type
JPS57212224A (en) * 1981-06-24 1982-12-27 Nitto Electric Ind Co Ltd Epoxy resin composition for encapsulation of semiconductor
JPS61138619A (en) * 1984-12-10 1986-06-26 Matsushita Electric Works Ltd Epoxy resin composition for sealing semiconductor
JPS61221223A (en) * 1985-03-27 1986-10-01 Toshiba Corp Epoxy resin composition for sealing semiconductor
JPS6259626A (en) * 1985-09-10 1987-03-16 Shin Etsu Chem Co Ltd Epoxy resin composition
JPS62136860A (en) * 1985-12-10 1987-06-19 Nitto Electric Ind Co Ltd Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS572329A (en) * 1980-06-05 1982-01-07 Toshiba Corp Epoxy resin type composition and semiconductor device of resin sealing type
JPS57212224A (en) * 1981-06-24 1982-12-27 Nitto Electric Ind Co Ltd Epoxy resin composition for encapsulation of semiconductor
JPS61138619A (en) * 1984-12-10 1986-06-26 Matsushita Electric Works Ltd Epoxy resin composition for sealing semiconductor
JPS61221223A (en) * 1985-03-27 1986-10-01 Toshiba Corp Epoxy resin composition for sealing semiconductor
JPS6259626A (en) * 1985-09-10 1987-03-16 Shin Etsu Chem Co Ltd Epoxy resin composition
JPS62136860A (en) * 1985-12-10 1987-06-19 Nitto Electric Ind Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005519147A (en) * 2002-02-28 2005-06-30 シーメンス　アクチエンゲゼルシヤフト Low corrosive epoxy resin and manufacturing method therefor
US7582706B2 (en) 2002-02-28 2009-09-01 Siemens Aktiengesellschaft Low chlorine content epoxy resin
WO2008007730A1 (en) 2006-07-12 2008-01-17 Unisantis Electronics (Japan) Ltd. Nonvolatile semiconductor memory and its drive method

Also Published As

Publication number Publication date
JP2558293B2 (en) 1996-11-27

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