JPS61138619A - Epoxy resin composition for sealing semiconductor - Google Patents

Abstract

PURPOSE:To obtain the titled epoxy resin composition having high ion-exchange capability and excellent moisture-resistant reliability and heat-resistance, and resistant to the lowering of the ion exchange capability even after the shock of soldering, by compounding a base epoxy resin with an inorganic ion exchange material consisting of a specific metal oxide. CONSTITUTION:The objective composition is produced by compounding an epoxy resin with an inorganic ion-exchange material consisting of one or more kinds of metal oxides of formula M2O3.M2'O5.nH2O (M and M' are 3-5-valent transition metal; m is 0-2). The amount of the ion-exchange material is preferably 1-30pts.(wt.) per 100pts. of the epoxy resin. The particle diameter of the inorganic ion-exchange material is preferably <=100mu.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an epoxy resin composition for semiconductor lamps with improved moisture resistance reliability.

[Background Art] In recent years, there has been a remarkable increase in the integration and density of semiconductor elements, and the current situation is that the requirements for epoxy resin compositions for use with semiconductors have become even more severe. Application fields of the epoxy resin composition for semiconductor encapsulation include not only Trannostar and IC, but also LSI and 64KD.
Very large scale integrated circuits such as RAM and 256KDRAM
In recent years, the epoxy resin compositions described above have also been used for sealing.

However, a disadvantage of resin sealing, typified by epoxy resin compositions, is its moisture resistance reliability, which is currently inferior to ceramic sealing. The decrease in moisture resistance in resin sealing is caused by ionic components contained in the sealing resin compound,
This will eventually lead to the ionization of halogens and alkalis, leading to the problem of corrosion of aluminum, which is the wiring material for semiconductor devices.

To solve the above problem, the following methods have been tried to reduce ions. One is a method of reducing hydrolyzable ions, especially chloride ions, which are produced as by-products during base U1 fat synthesis. Although this method was effective, there was a limit to the reduction at the stage of resin synthesis, and it could not be said to be sufficient. Another method is to incorporate into the base resin an ion exchange resin that exchanges ionizing ions for harmless ions. However, with this method, not only the exchange ability of the ion exchange resin is low, but also there are problems with the purity of the ion exchange resin, and because the heat resistance is not good, the ion exchange ability decreases when subjected to thermal shock such as solder shock. However, there is a problem in that both of them disappear, and the current situation is that sufficient effects have not been obtained in both cases.

[Object of the Invention] The present invention has been made in view of the above points, and uses an ion exchange resin that has good heat resistance, good purity of ion exchange resin, and high ion exchange ability to remove chloride ions. The object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation that can reduce sodium ions and improve Iw humidity reliability.

[Disclosure of the Invention J That is, the epoxy resin composition for semiconductor encapsulation of the present invention has the general formula MyOv .M” 20.nHzo(M,
M' is a trivalent to pentavalent transition metal, n is 0 to 2), and an sm ion exchanger formed from one or more metal oxides is blended with an epoxy resin. By adding this M-type ion exchanger, the above object was achieved.

The present invention will be described in detail below.1 The inorganic ion exchanger according to the present invention has the general formula M 20 "s・M'zOs・n
H20 (M - M' is a trivalent to pentavalent transition metal, n is 0-
It is composed of one or more of the metal oxides shown in 2), and is obtained by melt-mixing and crystallizing these metal oxides. Here, M or M' may be, for example, 30% monium, bismuth, etc., and M and M' may be the same metal. Also, mouth is not necessarily an integer,
For example, the general formula of a preferable inorganic ion exchanger, which may be 0.5.1.5, is 5b20a・BizOs”0
．． 5HzO'C'Aj+.

Observing the surface condition of this inorganic ion exchanger, M-OH
It partially has the structure, and this M-OH plays an important role in ion exchange. That is, for halogen ions, M-OH+H"+CI-4
M-CI +H"OH→M-CI +H20 Also, 1 for alkali ion, M-OH+ Na" -*M-Na +OH-10 H
”-eM-Na + H2O M-Na, M-CI after ion exchange in this way
is stable and there is no risk of secondary decomposition. *
In addition, the H'' generated after ion exchange is recombined as H2O, and does not corrode aluminum, which is the wiring material of semiconductor devices. Things are also very stable,
It not only has features not found in conventional ion exchange resins, but also has the feature of trapping and exchanging both cations and 7-ions with a single substance. In addition, this inorganic ion exchanger is stable up to 400 to 450°C, and its exchange ability will not decrease even when subjected to thermal shock such as soldering. It is added to and mixed with epoxy resin such as epoxy resin, and j! of fused silica etc. [Add filler, curing agent for phenol/borac resin group, wax, coloring agent, coupling agent, II refueling agent, etc. as necessary, heat and knead, then cool and crush to obtain epoxy resin for semiconductor encapsulation. A composition is obtained. The amount of p@formed ion exchanger to be added to the 01 fat composition is 1 to 30 parts by weight and 11 parts by weight per 100 parts by weight of epoxy P or FM resin. Addition amount is 1
If the amount is less than 30 parts by weight, the effect of the addition is poor, and even if the amount is more than 30 parts by weight, the ion exchange ability will not improve, making it uneconomical. *a It is desirable that the particle size of the ion exchanger is 200μ or less; if it exceeds 200μ, not only will moldability problems such as date clogging occur, but the surface area per unit weight will become smaller, resulting in a decrease in conversion ability. There is. Therefore, the particle size of the inorganic ion exchanger is more preferably 100μ or less.

Therefore, the general formula MzOs・M'zov・nHz.

(M, , M' are trivalent to pentavalent transition metals, n is 0 to 2) An ion exchanger composed of one or more metal oxides is added to the epoxy flf fat. By doing so, each ion such as halogen ion and sodium ion present in the resin composition is exchanged with hydrogen ion and hydrogen ion.
It releases hydroxide ions, and the hydrogen ions and hydroxide ions recombine to form water, which does not corrode aluminum, which is the wiring material. In terms of the A-body, the amount of extracted ions was 172 or less compared to the conventional method, and the moisture resistance reliability was also improved to more than twice that of the conventional method. Moreover, the second inorganic ion exchanger has a high exchange capacity as mentioned above, and since it is a metal oxide, it also has excellent heat resistance, and has the ability to exchange ions even when subjected to thermal shock such as soldering. Composite reliability can be improved without any deterioration in performance, and the purity is also high.

The present invention will be specifically explained below based on Examples 12 and 1. After uniformly dispersing and mixing the ingredients shown in Table 1, they are melt-kneaded using hot rolls, and then cooled and pulverized to form an epoxy resin composition for semiconductor encapsulation. I got something.

Next, the amount of ions in the obtained resin composition was measured, and the moisture resistance was also measured. The amount of ions was measured after passing the cured product of the resin composition through 100 meshes.
After extraction with steam at 1° C. for 50 hours, it was filtered, and the filtrate was measured using an ion chromad. i! In the humidity test, aluminum model elements were sealed in a 16-bin DIP, and the second sealed product was left under conditions of 151°C and 100% RH to visually inspect aluminum corrosion. % is expressed as the time until it becomes defective. 1 The results are shown in a2 and Table 3.
From the results in Table 2, it can be seen that each ion in the resin composition of Example 1.2 was significantly reduced. Further, from the results in Table 3, it can be seen that the sealed products of Examples 1 and 2 have excellent moisture resistance.

Table 1 Note 1) Imigusol-based curing accelerator Table 2 Table 3 (Effects of the invention) As mentioned above, the present invention provides the following properties:
・nH+o (M, M' are trivalent to pentavalent transition metals, n is 0 to
Since the inorganic ion exchanger formed by one or more of the metal oxides shown in 2) is blended into the epoxy resin, the j1-organic ion exchanger can eliminate the halogen ions and sodium ions present in the resin composition. Since hydrogen ions and hydroxide ions, which are harmless to aluminum, are released in exchange with ions such as has been improved by more than twice that of the conventional method.

Furthermore, this inorganic ion exchanger has a high exchange capacity, and since it is a metal oxide, it is also heat resistant, so its ion exchange capacity will not decrease even if it is subjected to thermal shock such as solder shock. Composite reliability can also be improved, and purity is also high.

Agent Patent Attorney Ishi 1) Chief 7 Procedural Amendments (Voluntary) April 8, 1985 Patent Juryuke W 2, Title of Invention Epoxy Resin Composition 3 Amended Person π Relationship Patent Applicant Address 1048 Kadoma, Kadoma City, Osaka Name (58
3) Matsushita Electric Works Co., Ltd. Representative: Fujii 1-4, Agent 3: Flight number 530 Address: IZ-17-5, 1-chome Umeda, Kita-ku, Osaka City, I/I Voluntary Issue 6 on the date of the amendment order, increase due to the amendment Number of inventions None 7, subject of correction 1) Akira mt! FfE 2nd page 16th to 17th stroke 1-
In particular, halogens, etc. bring about ``,'' was deleted, and [especially when ionic impurities such as halogens and alkalis are ionized,
”.

2) Insert "brome ion" next to "chlor ion" on the 19th line of fJtJ on page 3 of the same page.

3) Delete [For example, antimony, etc.] from line 118 to i9 on page 4 of the same page, and [For example, phosphorus,
Examples include arsenic, antimony, bismuth, aluminum, lithium, indium, etc., and preferably a combination of antimony and bismuth. ].

4) tlSSlSS line 1st line 2nd line [Preferred unsubstituted ion...]. Delete J.

5) Delete the entire text from line 7 to line 11 of the same page as above and insert the following sentence.

rM−oH+H′+c+−→M−CI+H”+OH−→
M-CI + H,.

Furthermore, for alkali ions, M OH+Na+-eM-ONa+OH-+H'4M
-0Na +H20J 6) Change FM-NaJ in the 7th line of the same page to “M-ONaJ
I will correct it.

7) “Note 2)” in Table 1 on page 9 of the same page and [Note 2) outside the table
) Delete Sb, O, ・Bi, O, ・0.5H20J respectively.

Claims (3)

[Claims] (1) General formula M_2O_3・M′_2O_5・nH_2
An inorganic ion exchanger formed from one or more metal oxides represented by O (M, M' are trivalent to pentavalent transition metals, n is 0 to 2) is blended with an epoxy resin. An epoxy resin composition for semiconductor encapsulation, characterized in that: (2) The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the inorganic ion exchanger is blended in an amount of 1 to 30 parts by weight per 100 parts by weight of the epoxy resin. (3) The epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the particle size of the inorganic ion exchanger is 200 μm or less.