JPH05287054A - Liquid epoxy resin composition, its cured product, and semiconductor device sealed therewith - Google Patents

Liquid epoxy resin composition, its cured product, and semiconductor device sealed therewith

Info

Publication number
JPH05287054A
JPH05287054A JP11407292A JP11407292A JPH05287054A JP H05287054 A JPH05287054 A JP H05287054A JP 11407292 A JP11407292 A JP 11407292A JP 11407292 A JP11407292 A JP 11407292A JP H05287054 A JPH05287054 A JP H05287054A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin composition
cured product
liquid epoxy
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11407292A
Other languages
Japanese (ja)
Inventor
Toshio Shiobara
利夫 塩原
Koji Futatsumori
浩二 二ッ森
Kazuo Dobashi
和夫 土橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP11407292A priority Critical patent/JPH05287054A/en
Publication of JPH05287054A publication Critical patent/JPH05287054A/en
Pending legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)

Abstract

PURPOSE:To obtain the title composition which can give a cured product excellent in humidity resistance and high-temperature electrical properties and can be desirably used for, e.g. sealing a semiconductor device. CONSTITUTION:The title composition consists essentially of a curable epoxy resin, a curing agent and an inorganic ion exchanger of the general formula: AxOy(NO3)z(OHw.h (H2O) (wherein A is at least one kind of a trivalent to pentavalent transition metal; x=1-5; y=1-7; z=0-3; w=0.2-3; and h=0-2) and has a viscosity of 10,000 P or below at 25 deg.C.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置封止材、更
に各種分野における接着剤などとして好適に用いられる
液状エポキシ樹脂組成物及びその硬化物及び上記組成物
の硬化物で封止された半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is a semiconductor device encapsulant, and a liquid epoxy resin composition suitable for use as an adhesive in various fields, a cured product thereof, and a cured product of the above composition. The present invention relates to a semiconductor device.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】エポキ
シ樹脂及びこれに無機充填剤等を配合したエポキシ樹脂
組成物は、一般に他の熱硬化性樹脂に比べて、成形性、
接着性、電気特性、機械特性、耐湿性等に優れているた
め、各種成形材料、粉体塗料用材料、電気絶縁材料等と
して広く利用され、特に最近では半導体の封止材、ポッ
ティング材、コーティング材として使用されている。
2. Description of the Related Art Epoxy resins and epoxy resin compositions containing an inorganic filler and the like are generally superior in moldability, as compared with other thermosetting resins.
Due to its excellent adhesiveness, electrical properties, mechanical properties, moisture resistance, etc., it has been widely used as various molding materials, powder coating materials, electrical insulation materials, etc., especially semiconductor sealing materials, potting materials, and coatings recently. It is used as a material.

【0003】このような用途に対し、最近では液状のエ
ポキシ樹脂組成物が注目されているが、液状エポキシ樹
脂は、液状であるため使用できる材料が制限され、ま
た、通常のエポキシ樹脂組成物に比べて高温での電気特
性が悪くなることがあり、これを用いて半導体装置を封
止した場合、この封止装置は電極間にリーク電流が流
れ、正常な半導体特性を示さなくなつたり、ICを樹脂
封止し、高温、高湿下の劣化試験を行うと、チップの配
線に使用しているアルミニウム線が短時間で腐食し、断
線が発生する等の欠点を有している。そのため、半導体
封止に好適な耐湿性、高温電気特性に優れた液状エポキ
シ樹脂組成物が望まれている。
For such applications, liquid epoxy resin compositions have recently been attracting attention, but liquid epoxy resins are limited to usable materials because they are liquid, and they are not limited to ordinary epoxy resin compositions. Compared with this, the electrical characteristics at high temperature may become worse, and when a semiconductor device is sealed by using this, a leak current flows between the electrodes of this sealing device, and normal semiconductor characteristics are no longer exhibited, or IC When the resin is sealed with a resin and subjected to a deterioration test under high temperature and high humidity, the aluminum wire used for the wiring of the chip is corroded in a short time, which causes a disconnection. Therefore, a liquid epoxy resin composition suitable for semiconductor encapsulation and having excellent moisture resistance and high-temperature electrical properties is desired.

【0004】本発明は上記事情に鑑みなされたもので、
耐湿性及び高温電気特性に優れた硬化物を与える液状エ
ポキシ樹脂組成物及びその硬化物並びに該硬化物で封止
された半導体装置を提供することを目的とする。
The present invention has been made in view of the above circumstances.
An object of the present invention is to provide a liquid epoxy resin composition that gives a cured product having excellent moisture resistance and high-temperature electrical properties, a cured product thereof, and a semiconductor device encapsulated with the cured product.

【0005】[0005]

【課題を解決するための手段及び作用】本発明者は上記
目的を達成するため鋭意検討を重ねた結果、硬化性エポ
キシ樹脂と硬化剤とを含有する25℃の粘度が10,0
00ポイズ以下の液状エポキシ樹脂組成物に対し、下記
一般式(1) Axy(NO3z(OH)w・h(H2O) …(1) (但し、式中Aは1種又は2種以上の3〜5価の遷移金
属を示し、x=1〜5、y=1〜7、z=0〜3、w=
0.2〜3、h=0〜2である。)で示される無機イオ
ン交換体を配合した場合、上記無機イオン交換体が加水
分解性塩素、臭素等の遊離不純物を確実に捕捉すること
により、該組成物の硬化物によるアルミニウム配線の腐
食を効果的に抑制し、しかも組成物の硬化性も良好で優
れた耐湿性を有し、半導体封止用材等として好適に用い
ることができることを知見し、本発明をなすに至ったも
のである。
Means and Actions for Solving the Problems As a result of intensive studies to achieve the above object, the present inventor has found that the viscosity at 25 ° C. containing a curable epoxy resin and a curing agent is 10,0.
For a liquid epoxy resin composition of 00 poise or less, the following general formula (1) A x O y (NO 3 ) z (OH) w · h (H 2 O) (1) (where A is 1 Or 3 or more trivalent pentavalent transition metals, x = 1 to 5, y = 1 to 7, z = 0 to 3, w =
0.2-3 and h = 0-2. When the inorganic ion exchanger represented by the formula (1) is blended, the inorganic ion exchanger surely captures free impurities such as hydrolyzable chlorine and bromine, so that corrosion of aluminum wiring by a cured product of the composition is effective. The present invention has been accomplished based on the finding that it can be suitably used as a semiconductor encapsulating material, etc., because it has excellent curability and excellent curability of the composition.

【0006】従って、本発明は(A)硬化性エポキシ樹
脂、(B)硬化剤及び(C)上記一般式(1)で示され
る無機イオン交換体を必須成分として配合し、25℃に
おける粘度が10,000以下としたことを特徴とする
液状エポキシ樹脂組成物、その硬化物及び該硬化物で封
止された半導体装置を提供する。
Therefore, the present invention comprises (A) a curable epoxy resin, (B) a curing agent, and (C) an inorganic ion exchanger represented by the above general formula (1) as essential components, and has a viscosity at 25 ° C. Provided is a liquid epoxy resin composition characterized by being 10,000 or less, a cured product thereof, and a semiconductor device encapsulated with the cured product.

【0007】以下、本発明につき更に詳述すると、ま
ず、本発明の液状エポキシ樹脂組成物を構成する硬化性
エポキシ樹脂(A)としては、1分子中に2個以上のエ
ポキシ基を有するものが使用でき、後述するような各種
硬化剤によって硬化させることができることが可能であ
る限り分子構造、分子量等に特に制限はなく、従来から
知られている種々のものを使用することができる。具体
的には、例えばエピクロルヒドリンとビスフェノールを
はじめとする各種ノボラック樹脂から合成されるエポキ
シ樹脂、脂環式エポキシ樹脂あるいは塩素や臭素原子等
のハロゲン原子を導入したエポキシ樹脂などを挙げるこ
とができるが、常温で液状を呈する低粘度の組成物を得
るためには、これらの中でもビスフェノールA又はビス
フェノールFのグリシジルエーテル誘導体が好適に用い
られる。なお、上記エポキシ樹脂は、その使用に当たっ
ては必ずしも1種類の使用に限定されるものではなく、
2種類又はそれ以上を混合して使用してもよい。
The present invention will be described in more detail below. First, the curable epoxy resin (A) constituting the liquid epoxy resin composition of the present invention is one having two or more epoxy groups in one molecule. There are no particular restrictions on the molecular structure, molecular weight, etc. as long as it can be used and can be cured with various curing agents as described below, and various conventionally known ones can be used. Specifically, for example, an epoxy resin synthesized from various novolac resins including epichlorohydrin and bisphenol, an alicyclic epoxy resin or an epoxy resin into which a halogen atom such as chlorine or bromine atom is introduced can be mentioned. Among them, the glycidyl ether derivative of bisphenol A or bisphenol F is preferably used to obtain a low-viscosity composition that is liquid at room temperature. The epoxy resin is not necessarily limited to one type of use in its use.
You may use it, mixing 2 or more types.

【0008】また、エポキシ樹脂としては、後述する硬
化剤との混合物の軟化点が30℃以下で、かつ25℃に
おける粘度が500ポイズ以下となるようなものを使用
することが、低粘度のエポキシ樹脂組成物を得る点で好
ましい。
Further, as the epoxy resin, it is preferable to use one having a softening point of a mixture with a curing agent described below of 30 ° C. or less and a viscosity at 25 ° C. of 500 poise or less. It is preferable in terms of obtaining a resin composition.

【0009】なお、上記エポキシ樹脂の使用に際して、
モノエポキシ化合物を適宜併用することは差し支えな
い。このモノエポキシ化合物として具体的には、スチレ
ンオキシド、シクロヘキセンオキシド、プロピレンオキ
シド、メチルグリシジルエーテル、エチルグリシジルエ
ーテル、フェニルグリシジルエーテル、アリルグリシジ
ルエーテル、オクチレンオキシド、ドデセンオキシド等
が例示される。
When using the above epoxy resin,
The monoepoxy compound may be appropriately used in combination. Specific examples of the monoepoxy compound include styrene oxide, cyclohexene oxide, propylene oxide, methyl glycidyl ether, ethyl glycidyl ether, phenyl glycidyl ether, allyl glycidyl ether, octylene oxide, and dodecene oxide.

【0010】次に、硬化剤(B)としては、具体的には
ジアミノフェニルメタン、ジアミノフェニルスルホン、
メタフェニレンジアミン等に代表されるアミン系硬化
剤、無水フタル酸、無水ピロメリット酸、無水ベンゾフ
ェノンテトラカルボン酸等の酸無水物系硬化剤、あるい
はフェノールノボラック、クレゾールノボラック等の1
分子中に2個以上の水酸基を有するフェノールノボラッ
ク硬化剤が例示される。これらの中では、低粘度で低応
力のエポキシ樹脂組成物を得る酸無水物系硬化剤が好ま
しく用いられる。
Next, as the curing agent (B), specifically, diaminophenylmethane, diaminophenylsulfone,
Amine-based curing agents typified by metaphenylenediamine, acid anhydride-based curing agents such as phthalic anhydride, pyromellitic dianhydride, and benzophenonetetracarboxylic anhydride, or 1 such as phenol novolac and cresol novolac
Examples include phenol novolac curing agents having two or more hydroxyl groups in the molecule. Among these, an acid anhydride-based curing agent that gives an epoxy resin composition having a low viscosity and a low stress is preferably used.

【0011】これらの硬化剤の使用量は通常の使用量と
することができるが、エポキシ樹脂のエポキシ基の当量
に対して50〜150当量%、特に80〜110当量%
の範囲とすることが好ましい。
The amount of these curing agents used may be a usual amount, but is 50 to 150 equivalent%, particularly 80 to 110 equivalent% relative to the equivalent of the epoxy groups of the epoxy resin.
It is preferable to set it as the range.

【0012】更に、本発明の組成物においては、上記硬
化剤とエポキシ樹脂との反応を促進させる目的で、各種
硬化促進剤、例えばイミダゾールあるいはその誘導体、
三級アミン系誘導体、ホスフィン系誘導体、シクロアミ
ジン誘導体等を併用することは何ら差し支えない。な
お、これらの硬化促進剤の配合量も通常の範囲とするこ
とができる。
Further, in the composition of the present invention, various curing accelerators, such as imidazole or its derivatives, are used for the purpose of promoting the reaction between the curing agent and the epoxy resin.
There is no problem in using a tertiary amine derivative, a phosphine derivative, a cycloamidine derivative or the like in combination. In addition, the compounding amount of these curing accelerators can also be made into the usual range.

【0013】本発明の組成物には、更に下記一般式
(1) Axy(NO3z(OH)w・h(H2O) …(1) で示される無機イオン交換体を配合する。
The composition of the present invention further comprises an inorganic ion exchanger represented by the following general formula (1) A x O y (NO 3 ) z (OH) w · h (H 2 O) (1) Compound.

【0014】上記式(1)の無機イオン交換体は、エポ
キシ樹脂組成物中の遊離不純物イオンを捕捉する効果を
有するものである。ここで、式(1)において、Aは1
種又は2種以上の3〜5価の遷移金属、x=1〜5、y
=1〜7を示し、このAxyの具体例としては、Sb2
3,Al23,Bi23等を挙げることができる。ま
た、式(1)中のNO3基の数を示すzは0〜3である
が、不純物捕捉効果の点から好ましくは0.02以上、
特に0.02〜0.2である。なお、zが0.2より大
きいと、組成物の硬化性が悪くなる。更に、式(1)に
おいて、wは0.2〜3、好ましくは0.5〜1.5、
hは0〜2、好ましくは0.2〜1である。
The inorganic ion exchanger of the above formula (1) has an effect of capturing free impurity ions in the epoxy resin composition. Here, in the formula (1), A is 1
Or two or more trivalent pentavalent transition metals, x = 1 to 5, y
= 1 to 7, and a specific example of A x O y is Sb 2
O 3, Al 2 O 3, Bi 2 O 3 and the like. Further, z, which represents the number of NO 3 groups in the formula (1), is 0 to 3, but preferably 0.02 or more from the viewpoint of the effect of trapping impurities.
In particular, it is 0.02-0.2. When z is larger than 0.2, the curability of the composition deteriorates. Further, in the formula (1), w is 0.2 to 3, preferably 0.5 to 1.5,
h is 0 to 2, preferably 0.2 to 1.

【0015】上記式(1)の無機イオン交換体の具体例
としては、下記のもの Al22.2(OH)0.8・0.5H2O Sb2Bi1.26.8(OH)0.8・0.5H2O Sb2Bi1.26.4(NO30.5(OH)0.9・0.5H2O Sb2Bi1.26.8(NO30.08(OH)0.8・0.4H2O を挙げることができるが、これらの中で組成物の硬化特
性の保持及び遊離不純物の捕捉効果が良好である点か
ら、下記式(1a)の化合物がより好適に用いられる。
Specific examples of the inorganic ion exchanger of the above formula (1) are as follows: Al 2 O 2.2 (OH) 0.8 · 0.5H 2 O Sb 2 Bi 1.2 O 6.8 (OH) 0.8 · 0.5H 2 O Sb 2 Bi 1.2 O 6.4 (NO 3 ) 0.5 (OH) 0.9 · 0.5H 2 O Sb 2 Bi 1.2 O 6.8 (NO 3 ) 0.08 (OH) 0.8 · 0.4H 2 O can be mentioned. Of these, the compound of the following formula (1a) is more preferably used because the effect of retaining the curing characteristics of the composition and the effect of trapping free impurities are good.

【0016】 SbaBibc(NO3d(OH)e・fH2O …(1a) (但し、式中a,bはそれぞれ1〜2、cは4〜10、
dは0.02〜0.2、eは0.5〜1.5、fは0.
2〜1である。)
Sb a Bi b O c (NO 3 ) d (OH) e · fH 2 O (1a) (where a and b are 1 to 2 respectively, c is 4 to 10,
d is 0.02 to 0.2, e is 0.5 to 1.5, and f is 0.
It is 2-1. )

【0017】上記無機イオン交換体の平均粒径は5ミク
ロン以下であることが好ましく、特に0.1〜2ミクロ
ンであることが不純物イオンを捕捉する効果を高めるた
めに好ましい。
The average particle size of the inorganic ion exchanger is preferably 5 microns or less, and particularly preferably 0.1 to 2 microns in order to enhance the effect of trapping impurity ions.

【0018】また、硬化性エポキシ樹脂として、ビスフ
ェノールA、ビスフェノールFのグリシジルエーテル及
びその誘導体を用いた組成物、特にそれら硬化性エポキ
シ樹脂と硬化剤酸無水物を用いた組成物において、上記
無機イオン交換体の使用が好適である。更に、これらの
組成物中に低応力剤、例えば特許第1575649号に
示されるシリコーン変性エポキシを含有させた組成物を
使用しても優れた効果を与える。
Further, in the composition using glycidyl ether of bisphenol A and bisphenol F and its derivative as the curable epoxy resin, particularly in the composition using the curable epoxy resin and the curing agent acid anhydride, the above-mentioned inorganic ion is used. The use of exchangers is preferred. Further, excellent effects can be obtained by using a composition containing a low stress agent, for example, a silicone-modified epoxy shown in Japanese Patent No. 1575649 in these compositions.

【0019】なお、上記無機イオン交換体の配合量は、
組成物全体の0.5%(重量%、以下同じ)以上、特に
1〜5%とすることが好ましく、配合量が0.5%に満
たないと不純物イオンの捕捉性が低下する場合が生じ
る。
The blending amount of the above inorganic ion exchanger is
It is preferably 0.5% (% by weight, the same applies hereinafter) or more, especially 1 to 5% of the total composition, and if the content is less than 0.5%, the trapping property of impurity ions may decrease. ..

【0020】本発明の組成物中に無機質充填剤を配合す
ることは差し支えなく、また、使用する無機質充填剤の
種類、単独使用あるいは複数種の併用等に制限はなく、
エポキシ樹脂組成物の用途に応じて適宜選択される。例
えば結晶性シリカ、非結晶性シリカ等の天然シリカ、合
成高純度シリカ、合成球状シリカ、タルク、マイカ窒化
珪素、ボロンナイトライド、アルミナなどから選ばれる
1種又は2種以上を使用することができる。
There is no problem in incorporating an inorganic filler into the composition of the present invention, and there is no limitation on the type of inorganic filler used, a single use or a combination of a plurality of types.
It is appropriately selected depending on the application of the epoxy resin composition. For example, one or more kinds selected from natural silica such as crystalline silica and amorphous silica, synthetic high-purity silica, synthetic spherical silica, talc, mica silicon nitride, boron nitride, and alumina can be used. ..

【0021】上記無機質充填剤の配合量は必ずしも制限
されないが、硬化性エポキシ樹脂、硬化剤及び硬化促進
剤の総量100%に対して50〜700%、特に100
〜600%とすることが好ましい。配合量が50%に満
たないと得られるエポキシ樹脂組成物の膨張係数が大き
く、耐クラック性等の物性面でも満足する結果が得られ
ない場合があり、また、700%を超えると組成物の粘
度が極端に高くなってしまう場合がある。
The blending amount of the above-mentioned inorganic filler is not necessarily limited, but is 50 to 700%, especially 100% with respect to 100% of the total amount of the curable epoxy resin, the curing agent and the curing accelerator.
It is preferably set to ˜600%. If the compounded amount is less than 50%, the expansion coefficient of the obtained epoxy resin composition is large, and satisfactory results may not be obtained in terms of physical properties such as crack resistance, and if it exceeds 700%, the composition of the composition The viscosity may become extremely high.

【0022】本発明の組成物には、更に低応力剤、接着
向上用炭素官能性シラン、ワックス類、ステアリン酸な
どの脂肪酸及びその金属塩等の離型剤、カーボンブラッ
ク等の顔料、染料、酸化防止剤、表面処理剤(γ−グリ
シドキシプロピルトリメトキシシラン等)、各種導電性
充填剤、チクソ性付与剤、その他の添加剤を配合するこ
ともできる。なお、これらの添加剤の配合量は、本発明
の効果を妨げない範囲で通常量とすることができる。
The composition of the present invention further comprises a low-stress agent, a carbon-functional silane for improving adhesion, waxes, a release agent for fatty acids such as stearic acid and metal salts thereof, pigments such as carbon black, dyes, and the like. An antioxidant, a surface treatment agent (γ-glycidoxypropyltrimethoxysilane, etc.), various conductive fillers, thixotropy-imparting agents, and other additives can also be added. In addition, the compounding amount of these additives can be a usual amount as long as the effect of the present invention is not impaired.

【0023】本発明のエポキシ樹脂組成物の粘度は、B
H型回転粘度計を用い、4rpmの回転数で測定したも
ので、25℃における値が10,000ポイズ以下、特
に5,000ポイズ以下、より好ましくは5〜3,00
0ポイズであり、この低粘度を保つように上記必須成分
及び任意成分の配合量等を調整することが望ましい。
The viscosity of the epoxy resin composition of the present invention is B
Measured at 4 rpm with an H-type rotational viscometer, the value at 25 ° C is 10,000 poise or less, particularly 5,000 poise or less, more preferably 5 to 3,000.
It is 0 poise, and it is desirable to adjust the blending amounts of the above essential components and optional components so as to maintain this low viscosity.

【0024】本発明のエポキシ樹脂組成物は、上述した
生成物の所定量を均一に撹拌、混合することにより得る
ことができる。また、必要に応じてアセトン、トルエ
ン、キシレン等の有機溶剤で希釈して使用することも差
し支えない。なお、成分の配合順序に特に制限はない。
The epoxy resin composition of the present invention can be obtained by uniformly stirring and mixing a predetermined amount of the above-mentioned product. Further, it may be diluted with an organic solvent such as acetone, toluene, xylene or the like, if necessary. There is no particular limitation on the order of mixing the components.

【0025】なお、本発明の組成物の硬化条件は、例え
ば硬化温度80〜180℃で30〜480分とすること
が好ましい。なお、硬化させる際、表面や内部の気泡発
生を抑制するため、1段階の加熱だけでなく、2段階以
上に加熱温度を変えて硬化を行ういわゆるステップキュ
アーを採用し得る。
The curing conditions for the composition of the present invention are preferably, for example, a curing temperature of 80 to 180 ° C. and 30 to 480 minutes. In addition, in order to suppress the generation of bubbles on the surface or inside when curing, so-called step cure may be employed in which the heating temperature is changed not only in one step but also in two or more steps for curing.

【0026】本発明の液状エポキシ樹脂組成物はIC,
LSI,トランジスタ,ダイオード等、具体的にはフリ
ップチップの封止、テープオートメーティドボンディン
グ(TAB)、チップオーンボード(COB)等の半導
体封止用として好適に使用される。なお、半導体装置の
封止を行う場合は一般的なディピングやディスペンサー
による塗布、注型等の方法を採用して行うことができ
る。
The liquid epoxy resin composition of the present invention is an IC,
It is preferably used for sealing LSIs, transistors, diodes and the like, specifically, flip-chip sealing, tape automated bonding (TAB), semiconductor sealing of chip awning board (COB) and the like. When the semiconductor device is sealed, general dipping, coating with a dispenser, casting, or the like can be adopted.

【0027】[0027]

【発明の効果】本発明の液状エポキシ樹脂組成物は、上
述した構成としたことにより、耐湿性、高温電気特性に
優れた硬化物を与え、半導体装置封止用等として好適に
用いることができる。
EFFECTS OF THE INVENTION The liquid epoxy resin composition of the present invention, having the above-mentioned constitution, gives a cured product having excellent moisture resistance and high-temperature electrical characteristics, and can be suitably used for encapsulation of semiconductor devices and the like. ..

【0028】[0028]

【実施例】以下、実施例と比較例を示し、本発明を具体
的に示すが、本発明は下記の実施例に制限されるもので
はない。
EXAMPLES Hereinafter, the present invention will be specifically shown by showing Examples and Comparative Examples, but the present invention is not limited to the following Examples.

【0029】なお、実施例、比較例に先立ち、各例で使
用した低応力剤の製造方法を参考例により示す。
Prior to the examples and comparative examples, reference examples show the method for producing the low stress agent used in each example.

【0030】〔参考例〕リフラックスコンデンサー、温
度計、撹拌機及び滴下ロートを具備した内容積1リット
ルの四つ口フラスコへ軟化点80℃のエポキシ化フェノ
ールノボラック樹脂(エポキシ当量195)300gを
入れ、温度110℃で撹拌しながら2−アリルフェノー
ル32gとトリブチルアミン1gとの混合物を滴下時間
10分にて滴下し、更に温度110℃にて2時間撹拌を
続けた。得られた内容物から未反応の2−アリルフェノ
ール及びトリブチルアミンを減圧下で留去し、アリル基
含有のエポキシ樹脂(アリル当量1490、エポキシ当
量235)を得た。
[Reference Example] 300 g of epoxidized phenol novolac resin (epoxy equivalent 195) having a softening point of 80 ° C. was placed in a four-necked flask having an internal volume of 1 liter equipped with a reflux condenser, a thermometer, a stirrer and a dropping funnel. While stirring at 110 ° C., a mixture of 32 g of 2-allylphenol and 1 g of tributylamine was added dropwise at a dropping time of 10 minutes, and stirring was continued at 110 ° C. for 2 hours. Unreacted 2-allylphenol and tributylamine were distilled off from the obtained content under reduced pressure to obtain an allyl group-containing epoxy resin (allyl equivalent 1490, epoxy equivalent 235).

【0031】次に、上記と同様の四つ口フラスコに、上
記方法で得たアリル基含有のエポキシ樹脂100g、メ
チルイソブチルケトン100g、トルエン200g、2
%の白金濃度の2−エチルヘキサノール変性塩化白金酸
溶液0.4gをそれぞれ入れ、1時間の共沸脱水を行
い、還流温度にて下記式(2)で示されるオルガノポリ
シロキサン81gを滴下時間30分にて滴下し、更に同
一温度で4時間撹拌して反応させた後、得られた内容物
を水洗し、溶剤を減圧下で留去することにより、ジオル
ガノポリシロキサン単位44重量%含む化合物(低応力
剤)を得た。
Next, in a four-necked flask similar to the above, 100 g of the allyl group-containing epoxy resin obtained by the above method, 100 g of methyl isobutyl ketone, 200 g of toluene, 2
0.4 g of a 2-ethylhexanol-modified chloroplatinic acid solution having a platinum concentration of 0.1% was added to each and azeotropic dehydration was performed for 1 hour, and 81 g of an organopolysiloxane represented by the following formula (2) was added at a reflux temperature for a dropping time of 30. The reaction mixture was added dropwise at the same temperature for 4 hours with stirring, and the resulting contents were washed with water and the solvent was distilled off under reduced pressure to give a compound containing 44% by weight of diorganopolysiloxane unit. (Low stress agent) was obtained.

【0032】[0032]

【化1】 [Chemical 1]

【0033】〔実施例、比較例〕エポキシ樹脂(エポキ
シ当量184のエポキシ化ビスフェノールA)、酸無水
物(4−メチルヘキサヒドロ無水フタル酸)、上記参考
例で得られたジオルガノポリシロキサン単位を含有する
低応力剤、無機イオン交換体として上記式(1a)で示
されるアンチモン・ビスマス系酸化剤〔IXE680
(東亜合成化学製)〕及び硬化促進剤DBUの4級塩
〔U−cat5002(サンアポロ社製)〕又は2−フ
ェニル−4−メチル−5−ヒドロキシメチルイミダゾー
ル(四国化成工業製)、無機質充填剤として平均粒径1
5μmの溶融シリカを表1に示す配合量で使用し、更に
γ−グリシドキシプロピルトリメトキシシラン1重量部
を添加し、均一に混合して液状エポキシ樹脂組成物を調
製した。
Examples and Comparative Examples Epoxy resin (epoxidized bisphenol A having an epoxy equivalent of 184), acid anhydride (4-methylhexahydrophthalic anhydride), and the diorganopolysiloxane unit obtained in the above reference example were used. An antimony-bismuth-based oxidizing agent represented by the above formula (1a) [IXE680] as a low-stress agent and an inorganic ion exchanger to be contained.
(Manufactured by Toagosei) and a quaternary salt of a curing accelerator DBU [U-cat5002 (manufactured by San Apollo)] or 2-phenyl-4-methyl-5-hydroxymethylimidazole (manufactured by Shikoku Chemicals), an inorganic filler. As average particle size 1
A liquid epoxy resin composition was prepared by using 5 μm of fused silica in the blending amount shown in Table 1, further adding 1 part by weight of γ-glycidoxypropyltrimethoxysilane, and uniformly mixing.

【0034】比較のため、無機イオン交換体を配合せ
ず、その他の成分は実施例と同様にして液状エポキシ樹
脂組成物を調製した。
For comparison, a liquid epoxy resin composition was prepared in the same manner as in the examples except that the inorganic ion exchanger was not blended.

【0035】得られた上記組成物の耐湿性の評価を下記
方法で行った。結果を表1に示す。 耐湿性 シリコーンウェハ上にアルミニウムパターンを形成した
模擬ICをガラスエポキシ基板に搭載した試験素子に樹
脂組成物をドロップし、120℃/1hr、150℃/
2hrで硬化させて、試験素子を封止した。
The moisture resistance of the obtained composition is evaluated as follows.
Made by way. The results are shown in Table 1. Moisture resistance Formed aluminum pattern on silicone wafer
A test device with a simulated IC mounted on a glass epoxy substrate
Drop the fat composition, 120 ℃ / 1hr, 150 ℃ /
The test element was sealed by curing for 2 hours.

【0036】この封止素子をプレッシャークッカー試験
機(平山製作所社製、型式PC−242S)により12
1℃、2気圧で400時間処理した後、パターン導通不
良の個数を調べた。
This sealing element was tested with a pressure cooker tester (manufactured by Hirayama Seisakusho, model PC-242S) to obtain 12
After processing at 1 ° C. and 2 atm for 400 hours, the number of pattern conduction defects was examined.

【0037】[0037]

【表1】 [Table 1]

【0038】表1の結果から、液状エポキシ樹脂組成物
中に無機イオン交換体を配合することにより、優れた耐
湿性を付与することができることが認められる。
From the results shown in Table 1, it is recognized that excellent moisture resistance can be imparted by incorporating an inorganic ion exchanger into the liquid epoxy resin composition.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 土橋 和夫 群馬県碓氷郡松井田町大字人見1番地10 信越化学工業株式会社シリコーン電子材料 技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuo Dobashi 1 Hitomi, Oita, Matsuida-cho, Usui-gun, Gunma 10 Shin-Etsu Chemical Co., Ltd. Silicone Electronic Materials Research Laboratory

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 (A)硬化性エポキシ樹脂、(B)硬化
剤、(C)下記一般式(1)で示される無機イオン交換
体、 Axy(NO3z(OH)w・h(H2O) …(1) (但し、式中Aは1種又は2種以上の3〜5価の遷移金
属を示し、x=1〜5、y=1〜7、z=0〜3、w=
0.2〜3、h=0〜2である。)を必須成分として配
合してなり、25℃における粘度が10,000ポイズ
以下であることを特徴とする液状エポキシ樹脂組成物。
1. An (A) curable epoxy resin, (B) a curing agent, (C) an inorganic ion exchanger represented by the following general formula (1), A x O y (NO 3 ) z (OH) w. h (H 2 O) (1) (wherein A represents one or two or more trivalent to pentavalent transition metals, x = 1 to 5, y = 1 to 7, z = 0 to 0) 3, w =
0.2-3 and h = 0-2. Is added as an essential component, and the viscosity at 25 ° C. is 10,000 poise or less, a liquid epoxy resin composition.
【請求項2】 請求項1記載の液状エポキシ樹脂組成物
を硬化させることにより得られる硬化物。
2. A cured product obtained by curing the liquid epoxy resin composition according to claim 1.
【請求項3】 請求項1記載の液状エポキシ樹脂組成物
の硬化物により封止された半導体装置。
3. A semiconductor device encapsulated with the cured product of the liquid epoxy resin composition according to claim 1.
JP11407292A 1992-04-07 1992-04-07 Liquid epoxy resin composition, its cured product, and semiconductor device sealed therewith Pending JPH05287054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11407292A JPH05287054A (en) 1992-04-07 1992-04-07 Liquid epoxy resin composition, its cured product, and semiconductor device sealed therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11407292A JPH05287054A (en) 1992-04-07 1992-04-07 Liquid epoxy resin composition, its cured product, and semiconductor device sealed therewith

Publications (1)

Publication Number Publication Date
JPH05287054A true JPH05287054A (en) 1993-11-02

Family

ID=14628348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11407292A Pending JPH05287054A (en) 1992-04-07 1992-04-07 Liquid epoxy resin composition, its cured product, and semiconductor device sealed therewith

Country Status (1)

Country Link
JP (1) JPH05287054A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027514A (en) * 2005-07-19 2007-02-01 Fujitsu Ltd Semiconductor device and manufacturing method thereof
JP2008031190A (en) * 2006-07-26 2008-02-14 Shin Etsu Chem Co Ltd Curable silicone composition containing phosphor for led, and led light-emitting device using the composition

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61138619A (en) * 1984-12-10 1986-06-26 Matsushita Electric Works Ltd Epoxy resin composition for sealing semiconductor
JPS61228058A (en) * 1985-04-01 1986-10-11 Matsushita Electric Works Ltd Epoxy resin composition for sealing semiconductor
JPS61285242A (en) * 1985-06-13 1986-12-16 Matsushita Electric Works Ltd Epoxy resin composition
JPS63146917A (en) * 1986-12-10 1988-06-18 Matsushita Electric Works Ltd Epoxy resin composition for sealing semiconductor
JPH02305848A (en) * 1989-05-19 1990-12-19 Shin Etsu Chem Co Ltd Liquid epoxy resin composition and its cured product
JPH0339319A (en) * 1989-07-07 1991-02-20 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH03115320A (en) * 1989-09-29 1991-05-16 Shin Etsu Chem Co Ltd Liquid epoxy resin composition and cured product thereof
JPH0465419A (en) * 1990-07-06 1992-03-02 Toray Ind Inc Epoxy resin composition for semiconductor sealing

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Publication number Priority date Publication date Assignee Title
JPS61138619A (en) * 1984-12-10 1986-06-26 Matsushita Electric Works Ltd Epoxy resin composition for sealing semiconductor
JPS61228058A (en) * 1985-04-01 1986-10-11 Matsushita Electric Works Ltd Epoxy resin composition for sealing semiconductor
JPS61285242A (en) * 1985-06-13 1986-12-16 Matsushita Electric Works Ltd Epoxy resin composition
JPS63146917A (en) * 1986-12-10 1988-06-18 Matsushita Electric Works Ltd Epoxy resin composition for sealing semiconductor
JPH02305848A (en) * 1989-05-19 1990-12-19 Shin Etsu Chem Co Ltd Liquid epoxy resin composition and its cured product
JPH0339319A (en) * 1989-07-07 1991-02-20 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH03115320A (en) * 1989-09-29 1991-05-16 Shin Etsu Chem Co Ltd Liquid epoxy resin composition and cured product thereof
JPH0465419A (en) * 1990-07-06 1992-03-02 Toray Ind Inc Epoxy resin composition for semiconductor sealing

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027514A (en) * 2005-07-19 2007-02-01 Fujitsu Ltd Semiconductor device and manufacturing method thereof
US7683412B2 (en) 2005-07-19 2010-03-23 Fujitsu Microelectronics Limited Semiconductor device having a ferroelectric capacitator
US7915054B2 (en) 2005-07-19 2011-03-29 Fujitsu Semiconductor Limited Semiconductor device having a ferroelectric capacitor
JP2008031190A (en) * 2006-07-26 2008-02-14 Shin Etsu Chem Co Ltd Curable silicone composition containing phosphor for led, and led light-emitting device using the composition
JP4520437B2 (en) * 2006-07-26 2010-08-04 信越化学工業株式会社 A curable silicone composition containing a fluorescent material for LED and an LED light emitting device using the composition.

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