JPS6472522A - Apparatus for manufacturing semiconductor substrate - Google Patents

Apparatus for manufacturing semiconductor substrate

Info

Publication number
JPS6472522A
JPS6472522A JP22851887A JP22851887A JPS6472522A JP S6472522 A JPS6472522 A JP S6472522A JP 22851887 A JP22851887 A JP 22851887A JP 22851887 A JP22851887 A JP 22851887A JP S6472522 A JPS6472522 A JP S6472522A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
main surface
heat
ions
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22851887A
Other languages
English (en)
Inventor
Yasuhisa Omura
Katsutoshi Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP22851887A priority Critical patent/JPS6472522A/ja
Publication of JPS6472522A publication Critical patent/JPS6472522A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP22851887A 1987-09-14 1987-09-14 Apparatus for manufacturing semiconductor substrate Pending JPS6472522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22851887A JPS6472522A (en) 1987-09-14 1987-09-14 Apparatus for manufacturing semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22851887A JPS6472522A (en) 1987-09-14 1987-09-14 Apparatus for manufacturing semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS6472522A true JPS6472522A (en) 1989-03-17

Family

ID=16877680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22851887A Pending JPS6472522A (en) 1987-09-14 1987-09-14 Apparatus for manufacturing semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS6472522A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174374B1 (en) 1991-05-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6576534B1 (en) 1991-09-21 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JP2005086041A (ja) * 2003-09-09 2005-03-31 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハのイオン注入方法
JP2009038295A (ja) * 2007-08-03 2009-02-19 Canon Anelva Corp 汚染物質除去方法、汚染物質除去機構および真空薄膜形成加工装置
JP2009132037A (ja) * 2007-11-30 2009-06-18 Brother Ind Ltd 液滴噴射装置
JP2010500761A (ja) * 2006-08-09 2010-01-07 アプライド マテリアルズ インコーポレイテッド シリコン・オン・インシュレータ構造に使用されるプラズマ浸漬イオン注入処理による表面活性化のための方法
US8174800B2 (en) 2007-05-07 2012-05-08 Canon Anelva Corporation Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122966A (ja) * 1973-03-14 1974-11-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122966A (ja) * 1973-03-14 1974-11-25

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174374B1 (en) 1991-05-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6494162B1 (en) 1991-05-28 2002-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6770143B2 (en) 1991-05-28 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6576534B1 (en) 1991-09-21 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US6924212B2 (en) 1991-09-21 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US7368367B2 (en) 1991-09-21 2008-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JP2005086041A (ja) * 2003-09-09 2005-03-31 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハのイオン注入方法
JP2010500761A (ja) * 2006-08-09 2010-01-07 アプライド マテリアルズ インコーポレイテッド シリコン・オン・インシュレータ構造に使用されるプラズマ浸漬イオン注入処理による表面活性化のための方法
US8174800B2 (en) 2007-05-07 2012-05-08 Canon Anelva Corporation Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus
JP2009038295A (ja) * 2007-08-03 2009-02-19 Canon Anelva Corp 汚染物質除去方法、汚染物質除去機構および真空薄膜形成加工装置
JP2009132037A (ja) * 2007-11-30 2009-06-18 Brother Ind Ltd 液滴噴射装置

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