JPS646536B2 - - Google Patents
Info
- Publication number
- JPS646536B2 JPS646536B2 JP1422679A JP1422679A JPS646536B2 JP S646536 B2 JPS646536 B2 JP S646536B2 JP 1422679 A JP1422679 A JP 1422679A JP 1422679 A JP1422679 A JP 1422679A JP S646536 B2 JPS646536 B2 JP S646536B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- quality
- deposition
- film
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1422679A JPS55107234A (en) | 1979-02-13 | 1979-02-13 | Method of monitoring deposition film quality |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1422679A JPS55107234A (en) | 1979-02-13 | 1979-02-13 | Method of monitoring deposition film quality |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55107234A JPS55107234A (en) | 1980-08-16 |
| JPS646536B2 true JPS646536B2 (2) | 1989-02-03 |
Family
ID=11855143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1422679A Granted JPS55107234A (en) | 1979-02-13 | 1979-02-13 | Method of monitoring deposition film quality |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55107234A (2) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5989768A (ja) * | 1982-11-12 | 1984-05-24 | Fujitsu Ltd | 薄膜の形成方法 |
| JPS59115561A (ja) * | 1982-12-23 | 1984-07-04 | Stanley Electric Co Ltd | 薄膜トランジスタの製造方法 |
-
1979
- 1979-02-13 JP JP1422679A patent/JPS55107234A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55107234A (en) | 1980-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI806964B (zh) | 在高溫環境下偵測或監測化學前體的設備 | |
| US4898118A (en) | Apparatus for forming functional deposited film by microwave plasma CVD process | |
| JPS60258915A (ja) | レ−ザ−化学気相沈積方法および装置 | |
| US4664747A (en) | Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same | |
| JP2539000B2 (ja) | 基体に物質の薄い膜を沈着するプロセスの制御方法 | |
| CA1194385A (en) | Device fabrication using gas-solid processes | |
| McCurdy et al. | A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing | |
| JPH06339627A (ja) | 基板上に半導体材料を堆積する方法および薄膜製造法 | |
| US3620814A (en) | Continuous measurement of the thickness of hot thin films | |
| JP3077591B2 (ja) | Cvd装置及びcvd成膜方法 | |
| JPH0310082A (ja) | 堆積膜形成装置及び堆積膜形成方法 | |
| JPS646536B2 (2) | ||
| US20050087296A1 (en) | Processor | |
| JPH07118854A (ja) | 炭化ケイ素膜の形成方法 | |
| US6060391A (en) | Vapor phase growth method | |
| JPH06151421A (ja) | 窒化ケイ素薄膜の形成方法 | |
| JP2885547B2 (ja) | 二酸化シリコン薄膜の製造方法 | |
| JPS60128265A (ja) | 気相薄膜形成装置 | |
| JPS58190811A (ja) | アモルフアス水素化シリコン光導電膜の製造法 | |
| JPS62142780A (ja) | 堆積膜形成法 | |
| JPS61257478A (ja) | 薄膜の形成法 | |
| JPS62151571A (ja) | 堆積膜形成装置 | |
| JPH0645883B2 (ja) | 堆積膜形成法 | |
| GB2700698A (en) | Microwave plasma reactor and method of operation | |
| JPH0391701A (ja) | 反射防止膜及びその形成方法 |