JPS6464274A - Tunnel type josephson junction - Google Patents

Tunnel type josephson junction

Info

Publication number
JPS6464274A
JPS6464274A JP62219150A JP21915087A JPS6464274A JP S6464274 A JPS6464274 A JP S6464274A JP 62219150 A JP62219150 A JP 62219150A JP 21915087 A JP21915087 A JP 21915087A JP S6464274 A JPS6464274 A JP S6464274A
Authority
JP
Japan
Prior art keywords
barrier layer
tunnel barrier
deterioration
electrode
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62219150A
Other languages
Japanese (ja)
Other versions
JPH054828B2 (en
Inventor
Shinya Kominami
Yoshinobu Taruya
Ushio Kawabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62219150A priority Critical patent/JPS6464274A/en
Publication of JPS6464274A publication Critical patent/JPS6464274A/en
Publication of JPH054828B2 publication Critical patent/JPH054828B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the deterioration of a tunnel barrier layer, and the deterioration in physical or electrical characteristics, of a superconducting electrode, by constituting the tunnel barrier layer by using a single layer or a multilayer containing boron nitride or silicon carbide. CONSTITUTION:The tunnel barrier layer 4 of a Josephson junction element is constituted by using boron nitride. Even if a part composed only of boron generates in the tunel barrier layer 4, boron is scarcely diffused into an upper electrode 5 and a lower electrode 3 at the time of heat-treating, because the melting point of boron is higher than that of Al. Therefore, the deterioration of the tunnel barrier layer itself, the upper electrode and the lower electrode is little. By constituting the tunnel barrier layer 4 or an interlayer insulating film 7 by using silicon nitride, an element containing no oxygen can be constituted. Thereby, preventing the deterioration of the tunnel barrier layer 4 itself or the upper and the lower electrodes 5, 3 caused by diffusion of oxygen in the tunnel barrier layer 4 into a superconducting electrode, and preventing the deterioration of the upper and the lower electrodes 5, 3 caused by the diffusion of oxygen in the interlayer insulating film 7 into the superconducting electrode.
JP62219150A 1987-09-03 1987-09-03 Tunnel type josephson junction Granted JPS6464274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219150A JPS6464274A (en) 1987-09-03 1987-09-03 Tunnel type josephson junction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219150A JPS6464274A (en) 1987-09-03 1987-09-03 Tunnel type josephson junction

Publications (2)

Publication Number Publication Date
JPS6464274A true JPS6464274A (en) 1989-03-10
JPH054828B2 JPH054828B2 (en) 1993-01-20

Family

ID=16730990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219150A Granted JPS6464274A (en) 1987-09-03 1987-09-03 Tunnel type josephson junction

Country Status (1)

Country Link
JP (1) JPS6464274A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019504480A (en) * 2015-12-08 2019-02-14 ノースロップ グラマン システムズ コーポレイションＮｏｒｔｈｒｏｐ Ｇｒｕｍｍａｎ Ｓｙｓｔｅｍｓ Ｃｏｒｐｏｒａｔｉｏｎ Non-oxide dielectrics for superconducting devices
US10608159B2 (en) 2016-11-15 2020-03-31 Northrop Grumman Systems Corporation Method of making a superconductor device
US10763419B2 (en) 2017-06-02 2020-09-01 Northrop Grumman Systems Corporation Deposition methodology for superconductor interconnects
US10985059B2 (en) 2018-11-01 2021-04-20 Northrop Grumman Systems Corporation Preclean and dielectric deposition methodology for superconductor interconnect fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582082A (en) * 1981-06-29 1983-01-07 Nec Corp Josephson junction device
JPS6448315A (en) * 1987-08-14 1989-02-22 Hitachi Metals Ltd High temperature superconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582082A (en) * 1981-06-29 1983-01-07 Nec Corp Josephson junction device
JPS6448315A (en) * 1987-08-14 1989-02-22 Hitachi Metals Ltd High temperature superconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019504480A (en) * 2015-12-08 2019-02-14 ノースロップ グラマン システムズ コーポレイションＮｏｒｔｈｒｏｐ Ｇｒｕｍｍａｎ Ｓｙｓｔｅｍｓ Ｃｏｒｐｏｒａｔｉｏｎ Non-oxide dielectrics for superconducting devices
US10608159B2 (en) 2016-11-15 2020-03-31 Northrop Grumman Systems Corporation Method of making a superconductor device
US10763419B2 (en) 2017-06-02 2020-09-01 Northrop Grumman Systems Corporation Deposition methodology for superconductor interconnects
US10985059B2 (en) 2018-11-01 2021-04-20 Northrop Grumman Systems Corporation Preclean and dielectric deposition methodology for superconductor interconnect fabrication

Also Published As

Publication number Publication date
JPH054828B2 (en) 1993-01-20

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term