JPS646158B2 - - Google Patents
Info
- Publication number
- JPS646158B2 JPS646158B2 JP25185683A JP25185683A JPS646158B2 JP S646158 B2 JPS646158 B2 JP S646158B2 JP 25185683 A JP25185683 A JP 25185683A JP 25185683 A JP25185683 A JP 25185683A JP S646158 B2 JPS646158 B2 JP S646158B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- silicon single
- silicon
- quartz glass
- glass crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052783 alkali metal Inorganic materials 0.000 claims description 9
- 150000001340 alkali metals Chemical class 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005188 flotation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25185683A JPS60137892A (ja) | 1983-12-26 | 1983-12-26 | 石英ガラスルツボ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25185683A JPS60137892A (ja) | 1983-12-26 | 1983-12-26 | 石英ガラスルツボ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60137892A JPS60137892A (ja) | 1985-07-22 |
| JPS646158B2 true JPS646158B2 (OSRAM) | 1989-02-02 |
Family
ID=17228935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25185683A Granted JPS60137892A (ja) | 1983-12-26 | 1983-12-26 | 石英ガラスルツボ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60137892A (OSRAM) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0643277B2 (ja) * | 1988-03-18 | 1994-06-08 | コマツ電子金属株式会社 | 石英ルツボの製法 |
| JPH0226031A (ja) * | 1988-07-14 | 1990-01-29 | Toshiba Ceramics Co Ltd | シリコンウェーハ |
| JPH0825835B2 (ja) * | 1988-09-20 | 1996-03-13 | 東芝セラミックス株式会社 | 単結晶引上げ装置 |
| JPH0394843A (ja) * | 1989-09-04 | 1991-04-19 | Shin Etsu Chem Co Ltd | 合成石英ガラスるつぼおよびその製造方法 |
| JPH02229735A (ja) * | 1989-02-28 | 1990-09-12 | Shin Etsu Chem Co Ltd | 石英ガラス部材 |
| JP2631321B2 (ja) * | 1989-10-31 | 1997-07-16 | 信越石英株式会社 | シリコン単結晶引上用シリカガラスルツボ |
| JP2709644B2 (ja) * | 1990-04-25 | 1998-02-04 | 東芝セラミックス 株式会社 | シリコン単結晶製造用石英るつぼの製造方法 |
| JPH0725561B2 (ja) * | 1990-08-28 | 1995-03-22 | 信越半導体株式会社 | 石英ガラスルツボ |
| JPH0780716B2 (ja) * | 1991-02-08 | 1995-08-30 | 東芝セラミックス株式会社 | 石英ガラスルツボの製造方法 |
| JP2811290B2 (ja) * | 1995-04-04 | 1998-10-15 | 信越石英株式会社 | シリコン単結晶引き上げ用石英ガラスルツボ |
| US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
| US5976247A (en) * | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
| WO2002040732A1 (en) | 2000-11-15 | 2002-05-23 | G.T. Equipment Technologies Inc. | A protective layer for quartz crucibles used for silicon crystallization |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4028124A (en) * | 1976-04-26 | 1977-06-07 | Corning Glass Works | Method of enhancing the refractoriness of high purity fused silica |
| JPS5849519A (ja) * | 1981-09-07 | 1983-03-23 | Toyota Motor Corp | 自動車の車体フロア構造 |
| JPS6058657B2 (ja) * | 1981-09-24 | 1985-12-20 | 株式会社ナシヨナル技研 | 人工歯牙 |
| JPH0244799B2 (ja) * | 1981-10-26 | 1990-10-05 | Sony Corp | Ketsushoseichohoho |
-
1983
- 1983-12-26 JP JP25185683A patent/JPS60137892A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60137892A (ja) | 1985-07-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |