JPS6461069A - Schottky-junction field-effect transistor - Google Patents
Schottky-junction field-effect transistorInfo
- Publication number
- JPS6461069A JPS6461069A JP21940787A JP21940787A JPS6461069A JP S6461069 A JPS6461069 A JP S6461069A JP 21940787 A JP21940787 A JP 21940787A JP 21940787 A JP21940787 A JP 21940787A JP S6461069 A JPS6461069 A JP S6461069A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- gate
- drain
- schottky
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract 1
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To reduce the size of a chip and to suppress an irregular operation due to a delay by forming, 3-dimensionally in a vertical shape, a drain region on the channel region of a predetermined pattern a source region under the channel region and a gate region on the side face. CONSTITUTION:A high concentration layer 1 made of an N-type GaAs layer is formed on a source electrode 6s, a source region 2s made of an N-type impurity layer is formed thereon, a channel region 2c made of an N-type AlGaAs layer of a predetermined pattern and a gate region 4 made of a tungsten silicide layer for forming a Schottky junction on the side face of the region 2c are formed through an insulating layer 3a thereon, an insulating layer 3b is formed on the vicinity of the region 2c of the region 4, and a drain region 2d made of an N-type impurity layer is formed on the region 2c. Then, after a protective film 5 is formed, a gate electrode 6g and a drain electrode 6d are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21940787A JPS6461069A (en) | 1987-09-01 | 1987-09-01 | Schottky-junction field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21940787A JPS6461069A (en) | 1987-09-01 | 1987-09-01 | Schottky-junction field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461069A true JPS6461069A (en) | 1989-03-08 |
Family
ID=16734920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21940787A Pending JPS6461069A (en) | 1987-09-01 | 1987-09-01 | Schottky-junction field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461069A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451800A (en) * | 1992-12-02 | 1995-09-19 | International Business Machines Corporation | Metal oxide semiconductor heterojunction field effect transistor (MOSHFET) |
-
1987
- 1987-09-01 JP JP21940787A patent/JPS6461069A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451800A (en) * | 1992-12-02 | 1995-09-19 | International Business Machines Corporation | Metal oxide semiconductor heterojunction field effect transistor (MOSHFET) |
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