JPS6459983A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS6459983A JPS6459983A JP21824087A JP21824087A JPS6459983A JP S6459983 A JPS6459983 A JP S6459983A JP 21824087 A JP21824087 A JP 21824087A JP 21824087 A JP21824087 A JP 21824087A JP S6459983 A JPS6459983 A JP S6459983A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- type gaas
- crystal
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21824087A JPS6459983A (en) | 1987-08-31 | 1987-08-31 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21824087A JPS6459983A (en) | 1987-08-31 | 1987-08-31 | Manufacture of semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459983A true JPS6459983A (en) | 1989-03-07 |
Family
ID=16716788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21824087A Pending JPS6459983A (en) | 1987-08-31 | 1987-08-31 | Manufacture of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459983A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02305486A (ja) * | 1989-05-19 | 1990-12-19 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置の製造方法 |
US5116810A (en) * | 1989-10-16 | 1992-05-26 | American Superconductor Corporation | Process for making electrical connections to high temperature superconductors using a metallic precursor and the product made thereby |
US5426658A (en) * | 1992-01-21 | 1995-06-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser including ridge confining buffer layer |
CN112246247A (zh) * | 2020-10-15 | 2021-01-22 | 中国科学院过程工程研究所 | 一种有机硅单体合成反应催化剂及其制备方法和用途 |
-
1987
- 1987-08-31 JP JP21824087A patent/JPS6459983A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02305486A (ja) * | 1989-05-19 | 1990-12-19 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置の製造方法 |
US5116810A (en) * | 1989-10-16 | 1992-05-26 | American Superconductor Corporation | Process for making electrical connections to high temperature superconductors using a metallic precursor and the product made thereby |
US5426658A (en) * | 1992-01-21 | 1995-06-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser including ridge confining buffer layer |
CN112246247A (zh) * | 2020-10-15 | 2021-01-22 | 中国科学院过程工程研究所 | 一种有机硅单体合成反应催化剂及其制备方法和用途 |
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