JPS6459853A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS6459853A JPS6459853A JP21501287A JP21501287A JPS6459853A JP S6459853 A JPS6459853 A JP S6459853A JP 21501287 A JP21501287 A JP 21501287A JP 21501287 A JP21501287 A JP 21501287A JP S6459853 A JPS6459853 A JP S6459853A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- growth
- polycrystalline silicon
- dioxide film
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21501287A JPS6459853A (en) | 1987-08-31 | 1987-08-31 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21501287A JPS6459853A (en) | 1987-08-31 | 1987-08-31 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459853A true JPS6459853A (en) | 1989-03-07 |
Family
ID=16665256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21501287A Pending JPS6459853A (en) | 1987-08-31 | 1987-08-31 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459853A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7421884B2 (en) | 2004-06-01 | 2008-09-09 | Toyota Jidosha Kabushiki Kaisha | Method of determining cetane number of fuel in internal combustion engine |
-
1987
- 1987-08-31 JP JP21501287A patent/JPS6459853A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7421884B2 (en) | 2004-06-01 | 2008-09-09 | Toyota Jidosha Kabushiki Kaisha | Method of determining cetane number of fuel in internal combustion engine |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54154977A (en) | Semiconductor device and its manufacture | |
JPS52152164A (en) | Epitaxial wafer of group iii-v compound | |
JPS6459853A (en) | Preparation of semiconductor device | |
JPS6459854A (en) | Semiconductor device | |
JPS6459855A (en) | Manufacture of semiconductor device | |
JPS5649520A (en) | Vapor growth of compound semiconductor | |
JPS6240719A (ja) | エピタキシアルウエ−ハの製造方法 | |
JPS57115822A (en) | Manufacture of semiconductor device | |
JPS5670660A (en) | Semiconductor device | |
JPS5499577A (en) | Semiconductor assembly | |
JPS5538020A (en) | Manufacturing of semiconductor device | |
JPS5543882A (en) | Gaseous-phase growing of compound semiconductor epitaxial film | |
JPS6455847A (en) | Manufacture of semiconductor device | |
JPS6473714A (en) | Formation of semiconductor thin film | |
JPS6410620A (en) | Manufacture of semiconductor device | |
JPS51111057A (en) | Crystal growing device | |
JPS54106169A (en) | Vapor epitaxial growth device | |
JPS5591815A (en) | Silicon epitaxial growth | |
JPS5796567A (en) | Manufacture of semiconductor device | |
JPS53133367A (en) | Silicon vapor phase epitaxial growing method | |
JPS56105626A (en) | Compound semiconductor thin film single crystal | |
JPS53104158A (en) | Manufacture for semiconductor device | |
JPS51117882A (en) | Semiconductor device manufacturing method | |
JPS5350687A (en) | Production of semiconductor device | |
JPS644066A (en) | Manufacture of semiconductor device |