JPS6459853A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS6459853A
JPS6459853A JP21501287A JP21501287A JPS6459853A JP S6459853 A JPS6459853 A JP S6459853A JP 21501287 A JP21501287 A JP 21501287A JP 21501287 A JP21501287 A JP 21501287A JP S6459853 A JPS6459853 A JP S6459853A
Authority
JP
Japan
Prior art keywords
silicon
growth
polycrystalline silicon
dioxide film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21501287A
Other languages
English (en)
Inventor
Hiroshi Kitajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21501287A priority Critical patent/JPS6459853A/ja
Publication of JPS6459853A publication Critical patent/JPS6459853A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP21501287A 1987-08-31 1987-08-31 Preparation of semiconductor device Pending JPS6459853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21501287A JPS6459853A (en) 1987-08-31 1987-08-31 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21501287A JPS6459853A (en) 1987-08-31 1987-08-31 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6459853A true JPS6459853A (en) 1989-03-07

Family

ID=16665256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21501287A Pending JPS6459853A (en) 1987-08-31 1987-08-31 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6459853A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7421884B2 (en) 2004-06-01 2008-09-09 Toyota Jidosha Kabushiki Kaisha Method of determining cetane number of fuel in internal combustion engine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7421884B2 (en) 2004-06-01 2008-09-09 Toyota Jidosha Kabushiki Kaisha Method of determining cetane number of fuel in internal combustion engine

Similar Documents

Publication Publication Date Title
JPS54154977A (en) Semiconductor device and its manufacture
JPS52152164A (en) Epitaxial wafer of group iii-v compound
JPS6459853A (en) Preparation of semiconductor device
JPS6459854A (en) Semiconductor device
JPS6459855A (en) Manufacture of semiconductor device
JPS5649520A (en) Vapor growth of compound semiconductor
JPS6240719A (ja) エピタキシアルウエ−ハの製造方法
JPS57115822A (en) Manufacture of semiconductor device
JPS5670660A (en) Semiconductor device
JPS5499577A (en) Semiconductor assembly
JPS5538020A (en) Manufacturing of semiconductor device
JPS5543882A (en) Gaseous-phase growing of compound semiconductor epitaxial film
JPS6455847A (en) Manufacture of semiconductor device
JPS6473714A (en) Formation of semiconductor thin film
JPS6410620A (en) Manufacture of semiconductor device
JPS51111057A (en) Crystal growing device
JPS54106169A (en) Vapor epitaxial growth device
JPS5591815A (en) Silicon epitaxial growth
JPS5796567A (en) Manufacture of semiconductor device
JPS53133367A (en) Silicon vapor phase epitaxial growing method
JPS56105626A (en) Compound semiconductor thin film single crystal
JPS53104158A (en) Manufacture for semiconductor device
JPS51117882A (en) Semiconductor device manufacturing method
JPS5350687A (en) Production of semiconductor device
JPS644066A (en) Manufacture of semiconductor device