JPS6455844A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6455844A JPS6455844A JP21336487A JP21336487A JPS6455844A JP S6455844 A JPS6455844 A JP S6455844A JP 21336487 A JP21336487 A JP 21336487A JP 21336487 A JP21336487 A JP 21336487A JP S6455844 A JPS6455844 A JP S6455844A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon oxide
- gas
- opening
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To vary the etching velocities of an interlayer insulating film above and below the film and to prevent upper layer wirings at the upper end of an opening from disconnecting liable to be generated by forming a silicon oxide film by depositing while stepwisely or continuously varying the pressure of Ar gas by a sputtering method from low to high as the interlayer insulating film. CONSTITUTION:A silicon oxide film 5 in Ar gas of pressure of 5X10<-3>Torr by a sputtering method on a surface including lower layer wirings 4 and a silicon oxide film 6 in Ar gas of 1X10<-2>Torr are sequentially laminated to form an interlayer insulating film. Then, a photoresist film 7 having a pattern for connecting the wirings 4 is formed on the film 6, with the film 7 as a mask the films 6, 7 are sequentially etched with buffered fluoric acid having higher etching velocity at higher pressure of Ar gas pressure at the time of forming the silicon oxide film to form a conical opening 8. Then, the photoresist film 7 is removed, an aluminum layer is deposited on the film 6 including the opening 8, selectively etched, connected to lower layer wirings 4 of the opening 8 to form upper layer wirings 9 extending on the film 7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21336487A JPH0622230B2 (en) | 1987-08-26 | 1987-08-26 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21336487A JPH0622230B2 (en) | 1987-08-26 | 1987-08-26 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6455844A true JPS6455844A (en) | 1989-03-02 |
JPH0622230B2 JPH0622230B2 (en) | 1994-03-23 |
Family
ID=16637955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21336487A Expired - Lifetime JPH0622230B2 (en) | 1987-08-26 | 1987-08-26 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0622230B2 (en) |
-
1987
- 1987-08-26 JP JP21336487A patent/JPH0622230B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0622230B2 (en) | 1994-03-23 |
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