JPS6454763A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS6454763A JPS6454763A JP21190287A JP21190287A JPS6454763A JP S6454763 A JPS6454763 A JP S6454763A JP 21190287 A JP21190287 A JP 21190287A JP 21190287 A JP21190287 A JP 21190287A JP S6454763 A JPS6454763 A JP S6454763A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- drain
- diffused
- breakdown strength
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21190287A JPS6454763A (en) | 1987-08-26 | 1987-08-26 | Mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21190287A JPS6454763A (en) | 1987-08-26 | 1987-08-26 | Mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6454763A true JPS6454763A (en) | 1989-03-02 |
Family
ID=16613537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21190287A Pending JPS6454763A (en) | 1987-08-26 | 1987-08-26 | Mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6454763A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06334182A (ja) * | 1993-05-21 | 1994-12-02 | Nec Corp | 半導体装置 |
JP2004031804A (ja) * | 2002-06-27 | 2004-01-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
-
1987
- 1987-08-26 JP JP21190287A patent/JPS6454763A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06334182A (ja) * | 1993-05-21 | 1994-12-02 | Nec Corp | 半導体装置 |
JP2004031804A (ja) * | 2002-06-27 | 2004-01-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
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