JPS6451620A - Vapor growth method - Google Patents

Vapor growth method

Info

Publication number
JPS6451620A
JPS6451620A JP20953987A JP20953987A JPS6451620A JP S6451620 A JPS6451620 A JP S6451620A JP 20953987 A JP20953987 A JP 20953987A JP 20953987 A JP20953987 A JP 20953987A JP S6451620 A JPS6451620 A JP S6451620A
Authority
JP
Japan
Prior art keywords
substrate
film
vapor growth
gas
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20953987A
Other languages
English (en)
Other versions
JP2538607B2 (ja
Inventor
Takayuki Oba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62209539A priority Critical patent/JP2538607B2/ja
Publication of JPS6451620A publication Critical patent/JPS6451620A/ja
Application granted granted Critical
Publication of JP2538607B2 publication Critical patent/JP2538607B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP62209539A 1987-08-24 1987-08-24 気相成長法 Expired - Lifetime JP2538607B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62209539A JP2538607B2 (ja) 1987-08-24 1987-08-24 気相成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62209539A JP2538607B2 (ja) 1987-08-24 1987-08-24 気相成長法

Publications (2)

Publication Number Publication Date
JPS6451620A true JPS6451620A (en) 1989-02-27
JP2538607B2 JP2538607B2 (ja) 1996-09-25

Family

ID=16574483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62209539A Expired - Lifetime JP2538607B2 (ja) 1987-08-24 1987-08-24 気相成長法

Country Status (1)

Country Link
JP (1) JP2538607B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322527A (ja) * 1989-06-20 1991-01-30 Fujitsu Ltd 半導体装置の製造方法
JPH0417329A (ja) * 1990-05-11 1992-01-22 Nec Corp 薄膜の形成方法
JPH09148268A (ja) * 1995-11-22 1997-06-06 Nec Corp 半導体装置の製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949180A (ja) * 1972-09-18 1974-05-13
JPS5571040A (en) * 1978-11-22 1980-05-28 Mitsubishi Electric Corp Multilayer interconnection structure
JPS5683026A (en) * 1979-11-08 1981-07-07 Itt Metallizing treatment for semiconductor device
JPS5972132A (ja) * 1982-10-19 1984-04-24 Toshiba Corp 金属及び金属シリサイド膜の形成方法
JPS61198763A (ja) * 1985-02-28 1986-09-03 Toshiba Corp 半導体装置の製造方法
JPS61256672A (ja) * 1985-05-09 1986-11-14 Toshiba Corp 半導体装置の製造方法
JPS6266629A (ja) * 1985-09-19 1987-03-26 Fujitsu Ltd 薄膜形成方法
JPS62105422A (ja) * 1985-11-01 1987-05-15 Hitachi Ltd 半導体装置の製造方法
JPS6333569A (ja) * 1986-07-25 1988-02-13 Nippon Telegr & Teleph Corp <Ntt> 金属薄膜の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949180A (ja) * 1972-09-18 1974-05-13
JPS5571040A (en) * 1978-11-22 1980-05-28 Mitsubishi Electric Corp Multilayer interconnection structure
JPS5683026A (en) * 1979-11-08 1981-07-07 Itt Metallizing treatment for semiconductor device
JPS5972132A (ja) * 1982-10-19 1984-04-24 Toshiba Corp 金属及び金属シリサイド膜の形成方法
JPS61198763A (ja) * 1985-02-28 1986-09-03 Toshiba Corp 半導体装置の製造方法
JPS61256672A (ja) * 1985-05-09 1986-11-14 Toshiba Corp 半導体装置の製造方法
JPS6266629A (ja) * 1985-09-19 1987-03-26 Fujitsu Ltd 薄膜形成方法
JPS62105422A (ja) * 1985-11-01 1987-05-15 Hitachi Ltd 半導体装置の製造方法
JPS6333569A (ja) * 1986-07-25 1988-02-13 Nippon Telegr & Teleph Corp <Ntt> 金属薄膜の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322527A (ja) * 1989-06-20 1991-01-30 Fujitsu Ltd 半導体装置の製造方法
JPH0417329A (ja) * 1990-05-11 1992-01-22 Nec Corp 薄膜の形成方法
JPH09148268A (ja) * 1995-11-22 1997-06-06 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2538607B2 (ja) 1996-09-25

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